TCRT5000 sensor circuit
Abstract: reflective ir Telefunken Phototransistor TCRT5000 reflective Opto-Sensor CE96 tcrt5000 footprint
Text: TCRT5000 Reflective Optosensor with Transistor Output Description The TCRT5000 has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.
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TCRT5000
TCRT5000
D-74025
14-Jun-96
TCRT5000 sensor circuit
reflective ir
Telefunken Phototransistor
reflective Opto-Sensor
CE96
tcrt5000 footprint
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TCRT5000
Abstract: d1202 transistor TCRT5000L transistor d1202 D1202 Telefunken Phototransistor Opto-Sensor reflective Opto-Sensor tcrt5000 footprint
Text: TCRT5000 L Reflective Optosensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.
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TCRT5000
D-74025
10-Dec-97
d1202 transistor
TCRT5000L
transistor d1202
D1202
Telefunken Phototransistor
Opto-Sensor
reflective Opto-Sensor
tcrt5000 footprint
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TCRT5000
Abstract: tcrt5000 footprint TCRT5000L TCRT5000 sensor circuit Telefunken Phototransistor 340005
Text: TCRT5000 L Vishay Telefunken Reflective Optical Sensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.
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TCRT5000
D-74025
tcrt5000 footprint
TCRT5000L
TCRT5000 sensor circuit
Telefunken Phototransistor
340005
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tcrt5000 footprint
Abstract: TCRT5000
Text: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.
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TCRT5000
08-Apr-05
tcrt5000 footprint
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TCRT5000
Abstract: TCRT5000L Reflective Optical Sensor reflective ir
Text: TCRT5000 L Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.
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Original
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PDF
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TCRT5000
D-74025
TCRT5000L
Reflective Optical Sensor
reflective ir
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tcrt5000 footprint
Abstract: TCRT5000 sensor circuit
Text: TCRT5000 L Vishay Telefunken Reflective Optical Sensor with Transistor Output Description The TCRT5000(L) has a compact construction where the emitting-light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.
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Original
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PDF
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TCRT5000
D-74025
tcrt5000 footprint
TCRT5000 sensor circuit
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1w5301
Abstract: 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial
Text: Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Table of Contents Page 1. Input behavior of a MOS-gated transistor . 1 2. Test Circuit. 1
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AN-944
1w5301
1n414b
AN-944
1W530
high voltage gate drive transformer
IC not gate data sheet
DS0026
IRF130
AN944
transistor bipolar superficial
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1n414b
Abstract: 1w5301 free IR circuit diagram transistor IR 944 AN-944 DS0026 IRF130 AN944 IR igbt gate driver ic chips vacuum tube amplifier
Text: Index AN-944 v.Int Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Topics covered: • • • • • 1. Background Test method How to interpret the gate charge curve How to estimate switching times How to compare different devices
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AN-944
1n414b
1w5301
free IR circuit diagram
transistor IR 944
AN-944
DS0026
IRF130
AN944
IR igbt gate driver ic chips
vacuum tube amplifier
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1w5301
Abstract: 1n414b 5V GATE TO SOURCE VOLTAGE MOSFET 1n414b diode free IR circuit diagram 100 microfarad 20v capacitor not gate 1 microfarad capacitor AN-944 10 microfarad capacitor
Text: AN-944 v.Int Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Topics covered: • • • • • 1. Background Test method How to interpret the gate charge curve How to estimate switching times How to compare different devices
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AN-944
1w5301
1n414b
5V GATE TO SOURCE VOLTAGE MOSFET
1n414b diode
free IR circuit diagram
100 microfarad 20v capacitor
not gate
1 microfarad capacitor
AN-944
10 microfarad capacitor
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irf 345
Abstract: IRG4PC60F irf 44 n IGBT 600V 30A TO-3P
Text: PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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4442A
IRG4PC60F
O-247AC
O-247AC
247AC.
O-247AD)
irf 345
IRG4PC60F
irf 44 n
IGBT 600V 30A TO-3P
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Untitled
Abstract: No abstract text available
Text: PD - 94440A IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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4440A
IRG4PC60F-P
O-247AC
O-247
IR47AC.
O-247AD)
O-247AC
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AN-994
Abstract: IRG4PC60F-P 60A 150V IGBT
Text: PD - 94440A IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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4440A
IRG4PC60F-P
O-247AC
O-247
IR247AC.
O-247AD)
O-247AC
AN-994
IRG4PC60F-P
60A 150V IGBT
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Untitled
Abstract: No abstract text available
Text: PD - 94442A IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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4442A
IRG4PC60F
O-247AC
O-247AC
EA47AC.
O-247AD)
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Untitled
Abstract: No abstract text available
Text: PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast Speed IGBT C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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IRG4PC60U
O-247AC
O-247AC
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IRG4PC60U
Abstract: No abstract text available
Text: PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast Speed IGBT C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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IRG4PC60U
O-247AC
O-247AC
IRG4PC60U
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AN-994
Abstract: IRG4PC60U-P power supply for igbt driver to247 pcb footprint
Text: PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power
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IRG4PC60U-P
O-247AC
O-247
AN-994
IRG4PC60U-P
power supply for igbt driver
to247 pcb footprint
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ic MARKING QG
Abstract: AN-994 IRG4PC60U-P
Text: PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power
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IRG4PC60U-P
O-247AC
O-247
ic MARKING QG
AN-994
IRG4PC60U-P
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Untitled
Abstract: No abstract text available
Text: PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power
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IRG4PC60U-P
O-247AC
O-247
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IRG4PC60F
Abstract: igbt 40a 600v 60A 150V IGBT
Text: PD - 94442 IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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IRG4PC60F
O-247AC
O-247AC
IRG4PC60F
igbt 40a 600v
60A 150V IGBT
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TO-247AC Package igbt
Abstract: AN-994 IRG4PC60F-P 60A 150V IGBT
Text: PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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IRG4PC60F-P
O-247AC
O-247
O-247AC
TO-247AC Package igbt
AN-994
IRG4PC60F-P
60A 150V IGBT
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IRG4PC60F
Abstract: 60A 150V IGBT
Text: PD - 94442 IRG4PC60F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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IRG4PC60F
O-247AC
O-247AC
IRG4PC60F
60A 150V IGBT
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AN-994
Abstract: IRG4PC60F-P 60A 150V IGBT
Text: PD - 94440 IRG4PC60F-P Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
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Original
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PDF
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IRG4PC60F-P
O-247AC
O-247
O-247AC
AN-994
IRG4PC60F-P
60A 150V IGBT
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Untitled
Abstract: No abstract text available
Text: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r
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D-7030
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BLX92A
Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX92A
BLX92A
BLX92
em 179
sfe 5,5 ma
IEC134
transistor IR 944
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