TRANSISTOR IRF Search Results

TRANSISTOR IRF Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR IRF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
IRFR220 Abstract: No abstract text available Text: IRFR220 N-channel enhancement mode field effect transistor Rev. 01 — 14 August 2001 Product data M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: IRFR220 in SOT428 D-PAK .	Original	IRFR220 M3D300 IRFR220 OT428 MBK091	PDF
Untitled Abstract: No abstract text available Text: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets	OCR Scan	235b05 G0G4352 Q62702-D1068	PDF
transistor BD 424 Abstract: a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202 Text: bâ I 25C D • fl23Sb05 G0D4352 T ISIEG BD 424 NPN Silicon Planar Transistor T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets	OCR Scan	235b05 G0G4352 Q62702-D1068 QDQ43SM BD424 transistor BD 424 a06 transistor 000M353 BD424 Q62702-D1068 S100 transistor A08 A07 NPN transistor transistor bd 202	PDF
BC108 characteristic Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a	Original	MUN5211DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 characteristic BC237 c 2026 y transistor msc2295 marking 7m SOT-323	PDF
BD429 Abstract: D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^ f’33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 4 2 9 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 4 3 0 it is particularly suitable for use in	OCR Scan	fl23Sfc Q62702-D1069 BD429 fnb33 D1069 Q62702-D1069 fcdc 2SC 102 bD 106 transistor	PDF
BC237 Abstract: equivalent to BC177 2n6431 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431	PDF
BC237 Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device	Original	SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1	PDF
transistor BF245 Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The	Original	OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363	PDF
6JV6 Abstract: No abstract text available Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-chartnel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose	OCR Scan	BUK482-100A OT223 6JV6	PDF
IRFZ44NS Abstract: saf* philips Text: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very	Original	OT404 IRFZ44NS IRFZ44NS saf* philips	PDF
BC237 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its	Original	Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237	PDF
Transistor 2N2905A Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a	Original	MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92	PDF
SOT23 JEDEC standard orientation pad size Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458	PDF

lg smd transistor LF Abstract: d25V Text: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode standard level fleld-effect power transistor In a surface mounting plastic envelope using ’trench’ technology. The device features very	OCR Scan	IRFZ44NS SQT40ply lg smd transistor LF d25V	PDF
IRFZ48N Abstract: No abstract text available Text: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance	Original	O220AB IRFZ48N IRFZ48N	PDF
Untitled Abstract: No abstract text available Text: Central Semiconductor Corp. CXT2222A NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and	OCR Scan	CXT2222A OT-89 CXT2222A	PDF
BC237 Abstract: BC238B MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value	Original	PZTA42T1 318E-04, O-261AA MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 BC238B MOTOROLA	PDF
transistor 2N5458 Abstract: BC237 BC848 2N930 NPN transistor FREE Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its	Original	Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 transistor 2N5458 BC237 BC848 2N930 NPN transistor FREE	PDF
Untitled Abstract: No abstract text available Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik	Original	Q62702-P5250 suita10 GEOY6976	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
IC 3130 Abstract: Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik	Original	E00386 OHF00383 GEO06976 IC 3130 Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto	PDF
BF245 TRANSISTOR Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.	Original	OT-223 PZTA64T1 inch/1000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BF245 TRANSISTOR transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819	PDF
transistor irfz44n Abstract: irfz44n for irfz44n pin of IRFZ44N IRFZ44N equivalent of irfz44n datasheet of irfz44n Text: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance	Original	O220AB IRFZ44N transistor irfz44n irfz44n for irfz44n pin of IRFZ44N IRFZ44N equivalent of irfz44n datasheet of irfz44n	PDF

TRANSISTOR IRF Search Results

TRANSISTOR IRF Result Highlights (5)

TRANSISTOR IRF Datasheets Context Search

la 4440 amplifier circuit diagram 300 watt

IRFR220

Untitled

transistor BD 424

BC108 characteristic

BD429

BC237

BC237

transistor BF245

6JV6

IRFZ44NS

BC237

Transistor 2N2905A

SOT23 JEDEC standard orientation pad size

lg smd transistor LF

IRFZ48N

Untitled

BC237

transistor 2N5458

Untitled

2N2222A 338

IC 3130

BF245 TRANSISTOR

transistor irfz44n