Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR J11 Search Results

    TRANSISTOR J11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR J11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original
    PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    NTE341

    Abstract: No abstract text available
    Text: NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead


    Original
    PDF NTE341 NTE341 175MHz 155MHz 136MHz

    SGA9289Z

    Abstract: No abstract text available
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original
    PDF SGA9289Z OT-89 SGA9289Z SGA9289Zâ SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1

    Untitled

    Abstract: No abstract text available
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF


    Original
    PDF SGA9189Z OT-89 SGA9189Z 39dBm, SGA9189Zâ SGA9189ZSQ SGA9189ZSR

    SGA9289Z

    Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
    Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This


    Original
    PDF SGA9289Z SGA9289Z OT-89 SGA9289Z" SGA9289ZSQ SGA9289ZSR SGA9289Z-EVB1 MARKING P2Z SGA-9289z rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9

    sga9189z

    Abstract: marking p1z SGA-9189Z marking p1z transistor
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF


    Original
    PDF SGA9189Z SGA9189Z OT-89 39dBm, SGA9189Z" SGA9189ZSQ SGA9189ZSR marking p1z SGA-9189Z marking p1z transistor

    Untitled

    Abstract: No abstract text available
    Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This


    Original
    PDF SGA9189Z SGA9189Z OT-89 39dBm, SGA9189ZSQ SGA9189ZSR SGA9189Z-EVB1

    SGA9189

    Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
    Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to


    Original
    PDF SGA-9189 OT-89 39dBm, SGA9189Z" SGA9189" SGA-9189Z EDS-101497 SGA9189 marking p1z 130C SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor

    MARKING P2Z

    Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
    Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to


    Original
    PDF SGA-9289 OT-89 SGA9289Z" SGA9289" SGA-9289Z EDS-101498 SGA-9289 MARKING P2Z SGA9289 130C J231 transistor j392 sot89

    LWE2015R

    Abstract: SC15
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor


    Original
    PDF LWE2015R OT446A SCA53 127147/00/02/pp12 LWE2015R SC15

    PVB42004X

    Abstract: SC15 sot445
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor


    Original
    PDF PVB42004X OT445A SCA53 127147/00/02/pp8 PVB42004X SC15 sot445

    BC108 characteristic

    Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


    Original
    PDF MUN5211DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC108 characteristic BC237 c 2026 y transistor msc2295 marking 7m SOT-323

    SOT123 Package

    Abstract: enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain


    Original
    PDF BLF145 SC08a OT123 SOT123 Package enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table

    BC237

    Abstract: equivalent to BC177 2n6431
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original
    PDF MUN5111DW1T1 Reduc218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 equivalent to BC177 2n6431

    transistor BF245

    Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The


    Original
    PDF OT-223 PZTA14T1 inch/1000 U218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor BF245 BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363

    enamelled copper wire tables

    Abstract: BLF145 J146 J-146
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain • Low noise figure k, halfpage


    Original
    PDF BLF145 OT123 MBB072 enamelled copper wire tables BLF145 J146 J-146

    2779, transistor

    Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original
    PDF RD01MUS1 520MHz RD01MUS1 520MHz 2779, transistor 1348 transistor RD01MSU1 fet 547

    RD01MUS1-101

    Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original
    PDF RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 c111m RD01MSU1 3M Touch Systems

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its


    Original
    PDF Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 BC237

    Transistor 2N2905A

    Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a


    Original
    PDF MUN5311DW1T1 Red218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor 2N2905A BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92

    rd01mus1 applications

    Abstract: RD01MUS1-101 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


    Original
    PDF RD01MUS1 520MHz RD01MUS1 RD01MUS1-101 rd01mus1 applications 3M Touch Systems

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan
    PDF

    BLW91

    Abstract: high power npn UHF transistor blw91 transistor
    Text: LSE » ES 7110fl2b □ 0fc.33ci5 457 « P H I N BLW91 PHILIPS INTERNATIONAL_ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable fo r transm itting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan
    PDF 7110fl2b 33ci5 BLW91 BLW91 high power npn UHF transistor blw91 transistor