TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
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OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
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NTE341
Abstract: No abstract text available
Text: NTE341 Silicon NPN Transistor RF Power Output Description: The NTE341 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted so as to isolate the collector lead and ground the emitter lead
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NTE341
NTE341
175MHz
155MHz
136MHz
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SGA9289Z
Abstract: No abstract text available
Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This
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SGA9289Z
OT-89
SGA9289Z
SGA9289Zâ
SGA9289ZSQ
SGA9289ZSR
SGA9289Z-EVB1
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Untitled
Abstract: No abstract text available
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF
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SGA9189Z
OT-89
SGA9189Z
39dBm,
SGA9189Zâ
SGA9189ZSQ
SGA9189ZSR
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SGA9289Z
Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This
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SGA9289Z
SGA9289Z
OT-89
SGA9289Z"
SGA9289ZSQ
SGA9289ZSR
SGA9289Z-EVB1
MARKING P2Z
SGA-9289z
rf transistor MARKING CODE 016
marking code of sot89 transistor
J4-87
transistor J9
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sga9189z
Abstract: marking p1z SGA-9189Z marking p1z transistor
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF
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SGA9189Z
SGA9189Z
OT-89
39dBm,
SGA9189Z"
SGA9189ZSQ
SGA9189ZSR
marking p1z
SGA-9189Z
marking p1z transistor
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Untitled
Abstract: No abstract text available
Text: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This
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SGA9189Z
SGA9189Z
OT-89
39dBm,
SGA9189ZSQ
SGA9189ZSR
SGA9189Z-EVB1
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SGA9189
Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
Text: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to
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SGA-9189
OT-89
39dBm,
SGA9189Z"
SGA9189"
SGA-9189Z
EDS-101497
SGA9189
marking p1z
130C
SGA9189Z
trace code marking RFMD
SGA-9189Z
marking p1z transistor
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MARKING P2Z
Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to
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SGA-9289
OT-89
SGA9289Z"
SGA9289"
SGA-9289Z
EDS-101498
SGA-9289
MARKING P2Z
SGA9289
130C
J231 transistor
j392
sot89
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LWE2015R
Abstract: SC15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LWE2015R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor
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LWE2015R
OT446A
SCA53
127147/00/02/pp12
LWE2015R
SC15
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PVB42004X
Abstract: SC15 sot445
Text: DISCRETE SEMICONDUCTORS DATA SHEET PVB42004X NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor
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PVB42004X
OT445A
SCA53
127147/00/02/pp8
PVB42004X
SC15
sot445
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BC108 characteristic
Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5211DW1T1
Reduc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC108 characteristic
BC237
c 2026 y transistor
msc2295
marking 7m SOT-323
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SOT123 Package
Abstract: enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain
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BLF145
SC08a
OT123
SOT123 Package
enamelled copper wire tables
HF SSB APPLICATIONS
BLF145
J119 transistor
J-146
MGP040
j146
enamelled copper wire mm table
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BC237
Abstract: equivalent to BC177 2n6431
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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MUN5111DW1T1
Reduc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
equivalent to BC177
2n6431
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transistor BF245
Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The
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OT-223
PZTA14T1
inch/1000
U218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor BF245
BC237
transistor motorola 2n3053
MMBF5486
TRANSISTOR REPLACEMENT FOR 2N3053
855 sot363
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enamelled copper wire tables
Abstract: BLF145 J146 J-146
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain • Low noise figure k, halfpage
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BLF145
OT123
MBB072
enamelled copper wire tables
BLF145
J146
J-146
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2779, transistor
Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
2779, transistor
1348 transistor
RD01MSU1
fet 547
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RD01MUS1-101
Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
RD01MUS1-101
c111m
RD01MSU1
3M Touch Systems
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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Red218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
BC237
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Transistor 2N2905A
Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5311DW1T1
Red218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
Transistor 2N2905A
BC237
applications of Transistor BC108
transistor c-1000
transistor equivalent 2n5551
2N2904 transistor TO92
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rd01mus1 applications
Abstract: RD01MUS1-101 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
RD01MUS1-101
rd01mus1 applications
3M Touch Systems
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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OCR Scan
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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BLW91
Abstract: high power npn UHF transistor blw91 transistor
Text: LSE » ES 7110fl2b □ 0fc.33ci5 457 « P H I N BLW91 PHILIPS INTERNATIONAL_ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable fo r transm itting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and
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7110fl2b
33ci5
BLW91
BLW91
high power npn UHF transistor
blw91 transistor
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