TRANSISTOR J18 Search Results

TRANSISTOR J18 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR J18 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IB3135 Abstract: No abstract text available Text: Part Number: Integra IB3135MH5 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT S-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB3135MH5 is designed for S-Band radar systems operating	Original	IB3135MH5 IB3135MH5 100us IB3135MH5- IB3135	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26P100â	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	AFT26P100â	PDF
Untitled Abstract: No abstract text available Text: Document Number: AFT27S010N Rev. 0, 11/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz.	Original	AFT27S010N AFT27S010NT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to	Original	A2T26H160--24S A2T26H160-24SR3	PDF
ATC100B471JT200XT Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25N MRFE6VS25NR1 MRFE6VS25N ATC100B471JT200XT EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25N MRFE6VS25NR1 25cale	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT27S010N Rev. 1, 9/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.	Original	AFT27S010N AFT27S010NT1	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S10 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S10 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating	Original	IB1012S10 IB1012S10 IB1012S10-REV-NC-DS-REV-B	PDF
MMBF170 Abstract: BS170 application note BS170 CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92 Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high	Original	BS170 MMBF170 500mA MMBF170 BS170 application note CBVK741B019 F63TNR PN2222N BS170 - J35Z TO 92 BS170 bs170 TO-92	PDF
CH858BPT Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CH858BPT SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE 3 (2) .055 (1.40) .047 (1.20)	Original	CH858BPT OT-23 OT-23) fig10 CH858BPT	PDF
MOSFET bs170 Abstract: BS170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note Text: April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high	Original	BS170 MMBF170 500mA MOSFET bs170 CBVK741B019 F63TNR MMBF170 PN2222N BS170 AN bs170 TO-92 BS170 application note	PDF
CH858BGP Abstract: No abstract text available Text: CHENMKO ENTERPRISE CO.,LTD CH858BGP SURFACE MOUNT PNP General Purpose Transistor VOLTAGE 30 Volts CURRENT 0.1 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE 3 (2) .055 (1.40) .047 (1.20)	Original	CH858BGP OT-23 OT-23) fig10 CH858BGP	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E J> bt.53^31 002A730 253 APX BFS23A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran	OCR Scan	002A730 BFS23A 175MHz 00Bfl73t>	PDF

2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
omni spectra sma Abstract: transistor n03 PH2856 Text: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry	OCR Scan	PH2856-3 Sb42205 0D013S3 TT50M50A ATC100A Sb4E20S Q0D1324 omni spectra sma transistor n03 PH2856	PDF
tlc 1451 Abstract: TRANSISTOR T-03 13MM ATC100A PH2931-20M Rogers 6010.5 Text: AjûKim m an AM P company Radar Pulsed Power Transistor, 20W, IOOjis Pulse, 10% Duty PH2931-20M 2.9 - 3.1 GHz V2.00 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry	OCR Scan	100fis PH2931-20M ATC100A tlc 1451 TRANSISTOR T-03 13MM ATC100A PH2931-20M Rogers 6010.5	PDF
MICRO SWITCH FREEPORT. ILL. U.S.A Abstract: VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3 Text: VX SERIES CHART 1 R 3,0 ABSOLUTE MAXIMUM RATINGS SUPPLY VOLTAGE Vs VOLTAGE EXTERNALLY APPLIED TO OUTPUT LOAD ON OUTPUT TEMPERATURE /H\ - 2 4 TO + 2 8 VOLTS DC 28 VOLTS DC MAX WITH OUTPUT TRANSISTOR IN OFF CONDITION ONLY -0.5 VOLTS MIN WITH OUTPUT TRANSISTOR IN	OCR Scan	CO79902 PR22156 C08374-1 C093789 R23775 PR237B7 PR23760 C093843 C095107 CO-95704 MICRO SWITCH FREEPORT. ILL. U.S.A VX81 TRANSISTOR JA5 honeywell m 944 r vx13-b1 MAR 637 lt 637 honeywell hall sensor vx81 vx11-b1 VX80-A3	PDF
BFS23A Abstract: 4312 020 36640 Text: b5E D PHILIPS INTERNATIONAL m 711002b Ü0b2b27 731 BFS23A ¡PHIN X V.H.F. POWER TRANSISTOR N-P-N epitaxial Planartransistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage o f 28 V. The transistor is resistance stabilized. Every tran	OCR Scan	711002b 0b2b27 BFS23A 9-j18 O-39/1 BFS23A 4312 020 36640	PDF
transistor c655 Abstract: 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50 Text: AÚK.CA', M an A M P company Radar Pulsed Power Transistor, 5W, 100\|is Pulse, 10% Duty 2.9-3.1 GHz PH2931-5M V2.00 Features • • • • • • • • ortn NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry	OCR Scan	100jis PH2931-5M ATC100A transistor c655 9225 npn transistor RF NPN POWER TRANSISTOR 3 GHZ 5w transistor power rating 5w TRANSISTOR A52 C655 13MM ATC100A PH2931-5M TT50	PDF
Untitled Abstract: No abstract text available Text: I I N AMER PHILIPS/DISCRETE MAINTENANCE TYPE ObE D bb53131 DDlSDfll 2 PKB3003U T - 3S - O 1 ? MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.	OCR Scan	bb53131 PKB3003U FO-53.	PDF
PKB3003U Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE MAINTENANCE TYPE ObE D ^ 5 3 ^ 3 1 DD1SDÖ1 2 J PKB3003U T - 33 MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.	OCR Scan	PKB3003U	PDF
V 518 J19 Abstract: j6812 MRF837 transistor j147 J-6812 Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF837 The RF Line 750 m W NPN SILICON RF LOW POWER TRANSISTOR . d e sign e d prim arily for w ide b and large s ign al predriver stage s in 800 M H z an d U H F frequency ranges. 870 M H z RF LOW POWER TRANSISTOR	OCR Scan	MRF837 Continu775 V 518 J19 j6812 MRF837 transistor j147 J-6812	PDF

Privacy Settings

TRANSISTOR J18 Search Results

TRANSISTOR J18 Result Highlights (5)

TRANSISTOR J18 Datasheets Context Search

IB3135

Untitled

Untitled

Untitled

Untitled

ATC100B471JT200XT

Untitled

Untitled

Untitled

MMBF170

CH858BPT

MOSFET bs170

CH858BGP

Untitled

2N2222A 338

sx3704

omni spectra sma

tlc 1451

MICRO SWITCH FREEPORT. ILL. U.S.A

BFS23A

transistor c655

Untitled

PKB3003U

V 518 J19