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Abstract: VCEO100
Text: X O O 3 J » SPT 5150 50 AMP PNP Solid S u t * Device! Incorporated 14830 Valley V iew Avenue La Mirada, California 90638 Telephone (2131 921-9660 T W X -910-583-4807 FEA TU RES POWER SWITCHING TRANSISTOR * I C .50 Amps * Fa st Switching 500 ns max.
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TWX-910-583-4807
to43
VCEO100
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GT8G101
Abstract: 2BLC 27F2C 2-21F2C GT60M302
Text: TOSHIBA GT60M302 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL M O S TYPE GT60M302 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm ¿0 .5 M A X. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode
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GT60M302
GT8G101
GT8G101
2BLC
27F2C
2-21F2C
GT60M302
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK1310 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 310 RF PO W ER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power P o ^l90W Min. Drain Efficiency 7D = 65%(Typ.) Frequency f = 230MHz Unit in mm -H _ e Push - Pull Structure Package
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2SK1310
230MHz
100//F,
4700pF
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NJL5154
Abstract: RW 4060
Text: NJL5154D/54M HIGH VCE MINI PHOTO COUPLER • GENERAL DESCRIPTION OUTLINE typ. U nit: mm The N JL 5154D /M are small package dual-in-line photo couplers which consist o f high power infrared emitting diode and high sensitve, high collector emitter voltage Si photo transistor.
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NJL5154D/54M
5154D
E82561)
NJL51S4D/54M
NJL5154
RW 4060
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2N4301
Abstract: No abstract text available
Text: TYPE 2N4301 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS • 50 W at 100°C Case Temperature • Max V£E Sat of 0.4 V at 5 A lc i l • tyP *on °f ISO ns at 5 A l( • Min fT of 40 MHz * m echanical d ata
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2N4301
T0-61
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78H15
Abstract: uA78H12 A78H12 78h12 MA78H A78H15 Ma78h15
Text: /¿ A 7 8 H 1 2 • ¿ /A 7 8 H 1 5 5 AMP VOLTAGE REGULATORS FAIRCHILD HYBRID PRODUCTS GENERAL DESCRIPTION Fixed O u tp ut - The /¿A78H12 and ^A78H15 are regulators with fixed output volt ages and 5 A output current capability with all the inherent characteristics of the
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A78H12
A78H15
78H15
A78H12
MA78H15
/xA78H15
uA78H12
uA78H12
78h12
MA78H
Ma78h15
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Untitled
Abstract: No abstract text available
Text: S D S S D S ARF1500 ARF1500 BeO RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 1525-xx S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.
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ARF1500
1525-xx
40MHz
ARF1500
50-450pF
1500pF
8200pF
150pF
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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28Vdc
MSC1002
AVIA c cube
IC CD 4440 amplifier circuit diagram
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em 518 diode
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES | QM50CY-H | MEDIUM POWER SWITCHING USE \ INSULATED TYPE ? QM50CY-H • lc Collector c u rre n t. • Vcex C ollector-em itter v o lta g e . DC current g a in . • hFE 50A ! 600V I 75 I
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QM50CY-H
E80276
E80271
em 518 diode
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NDB6051L
Abstract: NDP6051L 30D40 MJ48A
Text: N November 1996 NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48 A, 50 V. RDS ON = 0.023 Ω @ VGS= 5 V RDS(ON) = 0.018 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field
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NDP6051L
NDB6051L
NDB6051L
30D40
MJ48A
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Untitled
Abstract: No abstract text available
Text: fCWEREX POÙIEREX INC B 'ìE D • 7 2 m t2 1 GDGM37fi 2 » P R X r KED245A1HB Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue Durand, BP107, 72003 Le Mans, France (43) 41.14.14 G, H Î Q h mB G t 3
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GDGM37fi
KED245A1HB
BP107,
Amperes/600
BP107
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tms 2300
Abstract: HIC037 transistor bf 175
Text: TMS4020NC • Mechanical data and pin alignments Add the following data: The TM S 40 20 NC is also available in a 22 pin dual-in line package w ith 400-m il spacing between leads. The pin assignments are as shown. FUNCTION PIN NO. FUNCTIC 1 2 3 4 5 6 Ag Ag
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TMS4020NC
400-m
TIH101
tms 2300
HIC037
transistor bf 175
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NDP6051L
Abstract: NDB6051L S1490 30d40
Text: November 1996 NDP6051L / NDB6051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 48 A, 50 V. RDS ON = 0.023 Ω @ VGS= 5 V RDS(ON) = 0.018 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field
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NDP6051L
NDB6051L
NDB6051L
S1490
30d40
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9275 transistor
Abstract: transistor k 208 MPSA42 MPSA42 multicomp
Text: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.
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MPSA42
9275 transistor
transistor k 208
MPSA42
MPSA42 multicomp
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7333 A
Abstract: transistor MPSA06 MPSA06 npn 9016 transistor transistor 7333
Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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MPSA06
7333 A
transistor MPSA06
MPSA06
npn 9016 transistor
transistor 7333
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bf199 equivalent
Abstract: BF199 transistor NPN BF199 bf199 transistor BF199 RF
Text: BF199 NPN Silicon Transistor Features: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
BF199
transistor NPN BF199
bf199 transistor
BF199 RF
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triac zd 607
Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Text: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes
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The32-246622
H1-O03EA0-0510020NM
triac zd 607
transistor C5586
bridge rectifier sanken rb40
rb40 bridge rectifier
rb60 bridge rectifier
ZD 607 - triac
CTPG2F
CTX12S
Toshiba transistor c4468
STA524A
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658uA
Abstract: No abstract text available
Text: Application Note Full Mold Type Chopper Type Switching Regulator IC SI-8000JF Series 5th Edition December 2005 SANKEN ELECTRIC CO., LTD. SI-8000JF －－－ Contents －－－ 1. General Description 1-1 Features －－－－－－－－－－ 3 1-2 Applications
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SI-8000JF
SI-8000JF
EI00068
658uA
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Untitled
Abstract: No abstract text available
Text: A25 / SMA25 Cascadable Amplifier 5 to 1500 MHz Rev. V3 Features Product Image • MEDIUM OUTPUT LEVEL: +9 dBm TYP. • WIDE POWER SUPPLY RANGE: +8 TO +15 VOLTS Description The A25 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and
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SMA25
MIL-STD-883
MAAM-008717-0SMA25
MAAM-008717-00CA25
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MPSA14
Abstract: transistor 7333
Text: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H K 5° 1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1
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MPSA14
MPSA14
transistor 7333
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bf199 equivalent
Abstract: bF199 transistor BF199 F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400 BF199 RF transistor NPN BF199
Text: BF199 NPN Silicon Transistor Feature: • NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 H 1.20 K 12.70 - L 1.982 2.082 M 1.03 1.20 1.40
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BF199
bf199 equivalent
bF199 transistor
BF199
F 9016 transistor
transistor 9016 npn
03 transistor
data bf199
ic 9400
BF199 RF
transistor NPN BF199
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TO-92 CASE MPSA06
Abstract: F 9016 transistor 7333 A MPSa06 equivalent transistor MPSA06 transistor 7333 MPSA06 transistor MPSA06
Text: MPSA06 NPN Silicon Transistor Feature: • General Purpose NPN Silicon Planar Epitaxial Amplifier Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F 5° G 1.14 1.40 H 1.14 1.53 K 12.70
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MPSA06
TO-92 CASE MPSA06
F 9016 transistor
7333 A
MPSa06 equivalent
transistor MPSA06
transistor 7333
MPSA06 transistor
MPSA06
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MPSA44
Abstract: 9016 transistor
Text: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low
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MPSA44
MPSA44
9016 transistor
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pin configuration pnp transistor mpsa92
Abstract: mpsa92 MPSA42 9016 transistor
Text: MPSA92 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • PNP Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,
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MPSA92
MPSA42.
pin configuration pnp transistor mpsa92
mpsa92
MPSA42
9016 transistor
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