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    TRANSISTOR K 135 Search Results

    TRANSISTOR K 135 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 135 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR „ DESCRIPTION Complement to UTC 2SD1616/A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K


    Original     		PDF 2SB1116/A 2SD1616/A 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116L-x-T92-K 2SB1116G-x-T92-K 2SB1116L-x-T92-R 2SB1116G-x-T92-R 2SB1116AL-x-T92-B 2SB1116AG-x-T92-B

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AN1L4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    d1616

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AA1A4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AN1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BN1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BN1F4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BA1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    BA1A4Z

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AN1L4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    D1359

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BN1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with BA1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    D1617

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR BA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with BN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


    Original     		PDF

    431.K

    Abstract: transistor smd marking 431 transistor smd code marking 431 transistor smd marking 431.k 431 SMD CODE MARKING 431 TRANSISTOR smd marking code 4e PIMN31 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE
    Text: PIMN31 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor RET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PIMN31 OT457 SC-74) AEC-Q101 PIMN31 431.K transistor smd marking 431 transistor smd code marking 431 transistor smd marking 431.k 431 SMD CODE MARKING 431 TRANSISTOR smd marking code 4e transistor smd code marking 420 TRANSISTOR SMD MARKING CODE

    transistor smd ZH

    Abstract: TRANSISTOR SMD MARKING CODE zh transistor smd ZH 10 PIMC31 transistor smd code marking 431 transistor smd marking 431.k transistor smd marking 431 PIMN31 TRANSISTOR SMD MARKING CODE 04 SC74 marking 345
    Text: PIMC31 500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description 500 mA, 50 V NPN/PNP double Resistor-Equipped Transistor RET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PIMC31 OT457 SC-74) PIMN31 AEC-Q101 PIMC31 transistor smd ZH TRANSISTOR SMD MARKING CODE zh transistor smd ZH 10 transistor smd code marking 431 transistor smd marking 431.k transistor smd marking 431 PIMN31 TRANSISTOR SMD MARKING CODE 04 SC74 marking 345

    SMD MARKING CODE 4E

    Abstract: marking code 4e smd TRANSISTOR code marking 2007
    Text: PIMN31 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor RET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PIMN31 OT457 SC-74) AEC-Q101 PIMN31 771-PIMN31115 SMD MARKING CODE 4E marking code 4e smd TRANSISTOR code marking 2007

    DIN 6784

    Abstract: SOT363 Marking 1B BCR198W
    Text: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package


    Original     		PDF BCR198. BCR198S: BCR198/F/L3 BCR198T/W BCR198S EHA07183 EHA07173 BCR198 BCR198F BCR198L3 DIN 6784 SOT363 Marking 1B BCR198W