TRANSISTOR K 135 MOSFET Search Results

TRANSISTOR K 135 MOSFET Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

TRANSISTOR K 135 MOSFET Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1147 x motorola Abstract: "RF power MOSFETs" AN211A AN215A AN721 MRF1511T1 J302 fet MRF151 Text: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband	Original	MRF1511/D MRF1511T1 MRF1511T1 1147 x motorola "RF power MOSFETs" AN211A AN215A AN721 J302 fet MRF151	PDF
J-031 Abstract: AN211A AN215A AN721 MRF1511T1 Text: MOTOROLA Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband	Original	MRF1511/D MRF1511T1 MRF1511T1 DEVICEMRF1511/D J-031 AN211A AN215A AN721	PDF
0.5 W silicon zener diode Abstract: TRIMMER capacitor 82 pF MRF151 mosfet 440 mhz MRF1518 AN211A AN215A AN721 MRF1518T1 MRF-151 Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1518/D MRF1518T1 MRF1518T1 DEVICEMRF1518/D 0.5 W silicon zener diode TRIMMER capacitor 82 pF MRF151 mosfet 440 mhz MRF1518 AN211A AN215A AN721 MRF-151	PDF
Untitled Abstract: No abstract text available Text: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET	Original	PMV65XP O-236AB)	PDF
MRF1511 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device	Original	MRF1511 MRF1511NT1 MRF1511T1	PDF
1147 x motorola Abstract: AN215A AN721 MRF1511T1 AN211A Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF1511/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial	Original	MRF1511/D MRF1511T1 MRF1511T1 1147 x motorola AN215A AN721 AN211A	PDF
AN721 Abstract: "RF power MOSFETs" A113 AN211A AN215A MRF1511 MRF1511NT1 MRF1511T1 Text: Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF1511NT1 MRF1511T1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device	Original	MRF1511 MRF1511NT1 MRF1511T1 MRF1511NT1 AN721 "RF power MOSFETs" A113 AN211A AN215A MRF1511 MRF1511T1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband	Original	MRF1513/D MRF1513T1 MRF1513/D	PDF
MRF1513 equivalent Abstract: 2743021446 MRF1513 AN721 MRF1513T1 J524 AN211A AN215A Transistor J438 J182 transistor Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband	Original	MRF1513/D MRF1513T1 MRF1513T1 MRF1513 equivalent 2743021446 MRF1513 AN721 J524 AN211A AN215A Transistor J438 J182 transistor	PDF
MRF1513 Abstract: AN211A AN215A AN721 MRF1513T1 2001R Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1513/D MRF1513T1 MRF1513T1 MRF1513 AN211A AN215A AN721 2001R	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1513/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1513/D MRF1513T1 DEVICEMRF1513/D	PDF
MRF1518 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband	Original	MRF1518/D MRF1518T1 DEVICEMRF1518/D MRF1518	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 8, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device	Original	MRF1511N MRF1511NT1	PDF
C1324 Abstract: flange RF termination 50 Freescale S12 Z9.1 A113 AN211A AN215A AN721 MRF1511N MRF1511NT1 Text: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 5, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device	Original	MRF1511N MRF1511NT1 C1324 flange RF termination 50 Freescale S12 Z9.1 A113 AN211A AN215A AN721 MRF1511N MRF1511NT1	PDF

305 Power Mosfet MOTOROLA Abstract: j327 transistor MRF1518 AN211A AN215A AN721 MRF1518T1 Text: MOTOROLA Order this document by MRF1518/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband	Original	MRF1518/D MRF1518T1 MRF1518T1 305 Power Mosfet MOTOROLA j327 transistor MRF1518 AN211A AN215A AN721	PDF
AN211A Abstract: AN721 AN4005 FM LDMOS freescale transistor FREESCALE PACKING A113 AN215A JESD22 MRF1511N MRF1511NT1 Text: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 8, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device	Original	MRF1511N MRF1511NT1 AN211A AN721 AN4005 FM LDMOS freescale transistor FREESCALE PACKING A113 AN215A JESD22 MRF1511N MRF1511NT1	PDF
AN721 Abstract: AN4005 A113 AN211A AN215A EB212 MRF1511N MRF1511NT1 arco 466 Text: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 7, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device	Original	MRF1511N MRF1511NT1 AN721 AN4005 A113 AN211A AN215A EB212 MRF1511N MRF1511NT1 arco 466	PDF
A113 Abstract: AN211A AN215A AN721 MRF1511N MRF1511NT1 arco TRIMMER capacitor AN400 Text: Freescale Semiconductor Technical Data Document Number: MRF1511N Rev. 6, 9/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1511NT1 Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device	Original	MRF1511N MRF1511NT1 A113 AN211A AN215A AN721 MRF1511N MRF1511NT1 arco TRIMMER capacitor AN400	PDF
HG62G Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035 Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2	OCR Scan	PF0025 PF0026 NMT900, PF0027 PF0030 PF0031 NMT900 PF0032 PF0040 PF0042 HG62G HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035	PDF
2507 Abstract: No abstract text available Text: M IC 2507 MIC2507 Quad Integrated High-Side Switch Preliminary Information General Description Features The MIC2507 is a quad integrated high-side power switch that consists of four protected N-channel MOSFET output pass transistors each with a dedicated TTL compatible input	OCR Scan	MIC2507 MIC2507 130mi2 14-Pin 2507	PDF
Untitled Abstract: No abstract text available Text: m an A M P com pany RF MOSFET Power Transistor, 60W, 28V 2 - 1 7 5 MHz DU2860T V2.00 Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices	OCR Scan	DU2860T 4-40pF 9-180pF DU2860T	PDF
Untitled Abstract: No abstract text available Text: — .1— N AUER PHILIPS/DISCRETE ^[,53^31 0D17S4'5 S • BSD10 BSD12 ESE D T - Z S -Z S - MOSFET N-CHANNEL DEPLETION SW ITCHING TRAN SISTO RS Symmetrical insulated-gate silicon M O S field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.	OCR Scan	0D17S4 BSD10 BSD12	PDF
C2505 Abstract: No abstract text available Text: M IC 2505/2506 M iere! General Description Features The MIC2505 and MIC2506 are single and dual integrated high-side power switches that consist of TTL compatible inputs, a charge pump, and protected N-channel MOSFETs. The MIC2505/6 can be used instead of separate high-side	OCR Scan	MIC2505 MIC2506 MIC2505/6 MIC2505) M1C2506 C2505	PDF
25 ohm semirigid Abstract: No abstract text available Text: MùkmM m an A M P com pany RF MOSFET Power Transistor, 100W, 28V UF28100M 100-500 MHz V2.00 Features • • • • r»i N -C hannel K nhancem ent M ode Device DMOS S tru ctu re Lower C ap acitances for B ro ad b an d O p e ra tio n High S atu rated O u tp u t Pow er	OCR Scan	UF28100M 303BRANSFORMER. UF201OOM 25 ohm semirigid	PDF

TRANSISTOR K 135 MOSFET Search Results

TRANSISTOR K 135 MOSFET Result Highlights (5)

TRANSISTOR K 135 MOSFET Datasheets Context Search

1147 x motorola

J-031

0.5 W silicon zener diode

Untitled

MRF1511

1147 x motorola

AN721

Untitled

MRF1513 equivalent

MRF1513

Untitled

MRF1518

Untitled

C1324

305 Power Mosfet MOTOROLA

AN211A

AN721

A113

HG62G

2507

Untitled

Untitled

C2505

25 ohm semirigid