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    TRANSISTOR K 2333 Search Results

    TRANSISTOR K 2333 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 2333 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDTA143XE

    Abstract: SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


    Original     		PDF M3D173 PDTA143XE MAM345 SC-75 OT416) SCA63 115002/00/01/pp8 PDTA143XE SC-75

    PDTC143XE

    Abstract: PDTA143XE SC-75 PDTA143 PDTA143X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


    Original     		PDF M3D173 PDTC143XE MAM346 SC-75; OT416) 115002/00/02/pp8 PDTC143XE PDTA143XE SC-75 PDTA143 PDTA143X

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


    Original     		PDF M3D173 PDTC124XE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


    Original     		PDF M3D173 PDTA124XE MAM345 SC-75) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75

    PDTC114YE

    Abstract: SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ and 47 kΩ


    Original     		PDF M3D173 PDTC114YE 115002/00/03/pp8 PDTC114YE SC-75

    BP317

    Abstract: MMBTA42 MMBTA92 254-D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN


    Original     		PDF M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8 BP317 MMBTA42 MMBTA92 254-D

    MMBTA92

    Abstract: BP317 MMBTA42
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN


    Original     		PDF M3D088 MMBTA92 MMBTA42. MAM256 603506/01/pp8 MMBTA92 BP317 MMBTA42

    PDTC123ET

    Abstract: marking code 10 sot23 PDTA123JT
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES • Built-in bias resistors typ 2.2 kΩ


    Original     		PDF M3D088 PDTA123JT MAM100 115002/01/pp8 PDTC123ET marking code 10 sot23 PDTA123JT

    BP317

    Abstract: MMBT2222A PMBT2907A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).


    Original     		PDF M3D088 MMBT2222A PMBT2907A. MAM255 603506/01/pp8 BP317 MMBT2222A PMBT2907A

    MMBT3906 PHILIPS

    Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).


    Original     		PDF M3D088 MMBT3906 MMBT3904. MAM256 603506/01/pp8 MMBT3906 PHILIPS transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906

    marking code 10 sot23

    Abstract: BP317 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).


    Original     		PDF M3D088 MMBT3904 MMBT3906. MAM255 603506/01/pp8 marking code 10 sot23 BP317 MMBT3904 MMBT3906

    PDTA124EEF

    Abstract: SC-89 BP317 PDTA124E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each


    Original     		PDF M3D425 PDTA124EEF 613514/01/pp8 PDTA124EEF SC-89 BP317 PDTA124E

    BP317

    Abstract: PMBT5401 PMBT5550
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA


    Original     		PDF M3D088 PMBT5401 PMBT5550. MAM256 SCA63 115002/00/03/pp8 BP317 PMBT5401 PMBT5550

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).


    Original     		PDF M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8

    PDTC114EE

    Abstract: PDTA114EE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ each


    Original     		PDF M3D173 PDTC114EE 115002/00/04/pp8 PDTC114EE PDTA114EE SC-75

    PDTA123JE

    Abstract: PDTC123JE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 and 47 kΩ


    Original     		PDF M3D173 PDTC123JE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA123JE PDTC123JE SC-75

    PDTC143XE

    Abstract: Transistor B 886 PDTA143 PDTA143XE PDTA143X
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143XE NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 10 k£2


    OCR Scan     		PDF PDTC143XE SC-75 OT416) PDTA143XE. 115002/00/02/pp8 PDTC143XE Transistor B 886 PDTA143 PDTA143XE PDTA143X

    MARKING CODE ht9

    Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
    Text: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2


    OCR Scan     		PDF SCA64 15002/00/01/pp8 MARKING CODE ht9 MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking

    PDTA124XE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Nov 25 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTA124XE PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 22 k£2 and 47 k£2


    OCR Scan     		PDF PDTA124XE SC-75 OT416) PDTC124XE. 115002/00/03/pp8 PDTA124XE

    PDTA143Z

    Abstract: PDTC143Z PDTA143
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143ZT NPN resistor-equipped transistor FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 47 k£2


    OCR Scan     		PDF PDTC143ZT 115002/00/03/pp8 PDTA143Z PDTC143Z PDTA143

    2SC2333

    Abstract: No abstract text available
    Text: NPN SILICON POWER TRANSISTOR 2SC2333 D ESC R IPTIO N The 2SC2333 is NPN silicon triple diffused transistor designed for switching regulator, DC-DC converter and ultrasonic appliance ap­ PA C K A G E D IM EN SIO N S in millimeters inches plications. FEATURES


    OCR Scan     		PDF 2SC2333 2SC2333 400CTOR

    transistor D 288

    Abstract: transistor 614 CSA614 CSD288
    Text: CSA614, CSD288 CSA614 CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.88 3.75 2,29 2.79 2.54 3.43 0,56 12,70 14.73 6.35


    OCR Scan     		PDF CSA614, CSD288 CSA614 CSD288 23B33T4 0DQ1114 transistor D 288 transistor 614

    AN 6752

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 15 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TU FEATURES • Built-in bias resistor R1 typ. 10 k£2


    OCR Scan     		PDF PDTA114TU OT323) OT323 PDTC114TU. 115002/00/03/pp8 AN 6752

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT PINNING FEATURES • Built-in bias resistor R1 typ. 4.7 k£2


    OCR Scan     		PDF PDTC143TT 115002/00/02/pp8