Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR K 2627 Search Results

    TRANSISTOR K 2627 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 2627 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT 5388 BGA

    Abstract: Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511
    Text: IDT Product Selector Guide Accelerated Thinking SM Table of Contents Integrated Processors Flow-Control Management Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13


    Original     		PDF 12-03/DS/DL/BAY/10K CORP-PSG-00123 MT 5388 BGA Broadcom 7019 BTS 6000 ericsson alcatel 1511 mux mobile switching center msc ericsson bts 6000 2x4 TTL demultiplexer cisco 2801 ericsson bts Technical specification alcatel 1511

    smd transistor rc7

    Abstract: PIC16F873 asm programs smd RA2 transistor smd transistor RA5 16f873 smd transistor rc4 file rtcc mxeb-002l 16f873 datasheet "power factor correction" schematic PIC
    Text: Operating Manual #OM-00MX-001 Thermal Accelerometers Temperature Compensation Evaluation Board Ricardo Dao Page 1 of 25 #OM-00MX-001 Operating Manual A 7/06/01 Operating Manual #OM-00MX-001 TABLE OF CONTENTS 1.0 1.1 1.2 2.0 2.1 2.1.1 2.1.2 2.1.3 2.1.4 2.1.5


    Original     		PDF OM-00MX-001 OM-00MX-001 MXEB-232 RS232 MXEB-002L 0x8C40 0x0B10 smd transistor rc7 PIC16F873 asm programs smd RA2 transistor smd transistor RA5 16f873 smd transistor rc4 file rtcc 16f873 datasheet "power factor correction" schematic PIC

    Untitled

    Abstract: No abstract text available
    Text: AME High PSRR, Low Noise, 300mA CMOS Regulator AME8853A n General Description The AME8853A family of positive, CMOS linear regulators provide low dropout voltage 220mV@300mA , low quiescent current, and low noise CMOS LDO. These rugged devices have both Thermal Shutdown, and Current limit to prevent device failure under the "Worst" of


    Original     		PDF 300mA AME8853A AME8853A 220mV 300mA) 10KHz

    IRF7341 application note

    Abstract: ccfl driver schematic lcd ccfl driver schematic AME9000 pwm variable frequency drive circuit diagram chop ccfl driver MARKING EA1 star delta connection LOGIC wiring circuit diagram 24PIN AME9001
    Text: AME, Inc. CCFL Backlight Controller AME9001 n General Description n Pin Configuration The AME9001 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL . Specifically the AME9001 drives 3 external MOSFETs that, in turn, drive a wirewound transformer


    Original     		PDF AME9001 AME9001 24PIN 2023-DS9001-A IRF7341 application note ccfl driver schematic lcd ccfl driver schematic AME9000 pwm variable frequency drive circuit diagram chop ccfl driver MARKING EA1 star delta connection LOGIC wiring circuit diagram

    ccfl backlight controller schematic

    Abstract: AME9001AETH IRF7341 application note AME9000 MARKING EA1 circuit fluorescent tube 24v pwm variable frequency drive circuit diagram chop 24PIN 2N3906 AME9001
    Text: AME, Inc. CCFL Backlight Controller AME9001 n General Description n Pin Configuration The AME9001 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL . Specifically the AME9001 drives 3 external MOSFETs that, in turn, drive a wirewound transformer


    Original     		PDF AME9001 AME9001 24PIN 2023-DS9001-B ccfl backlight controller schematic AME9001AETH IRF7341 application note AME9000 MARKING EA1 circuit fluorescent tube 24v pwm variable frequency drive circuit diagram chop 2N3906

    Untitled

    Abstract: No abstract text available
    Text: AME AME8853 n General Description The AME8853 family of positive, CMOS linear regulators provide low dropout voltage 220mV@300mA , low quiescent current, and low noise CMOS LDO. These rugged devices have both Thermal Shutdown, and Current limit to prevent device failure under the "Worst" of


    Original     		PDF AME8853 AME8853 220mV 300mA) 300mA 10KHz

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


    Original     		PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    sa0565

    Abstract: BAIF4M BA1F4M
    Text: r IV E C ^?T/\f7 ir S * S'—b a-g-h^ Compound Transistor BA1 F4M i£StrtlNPNxti?*'>7rJU •' m m ★ o T x iS f it £ L T ^ £ -to 4.0 ±0.2 6” R i = 22 k fi, R 2= 22 k f i ) 2 6’ -0.50 O B N 1 F 4 M £ =7 > 7 °'J / > ? U « ^ i # ( T a = n 25 °C )


    OCR Scan     		PDF

    8115, transistor

    Abstract: TFK03 2SC3360 T108
    Text: NEC j '> U =1 > h i> J* ^ T r a n s is t o r = 7 > S ilic o n 2SC3360 N P N x t °^ + '> 7 ; P i'> ¡ Ü I Î / ± ± i ifs «fc * U =3 > h ^ -r -y ^ V X ^ NPN Epitaxial Silicon Transistor High Voltage Amplifier and Switching ^ B U / P A C K A G E DIMENSIONS


    OCR Scan     		PDF 2SA13301 CycleS50 8115, transistor TFK03 2SC3360 T108

    HT - 0886

    Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108
    Text: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2


    OCR Scan     		PDF PWS10 CycleS50 HT - 0886 HT 0886 g3je ht 9366 MARKING LE50 T108

    2SK470

    Abstract: 2sk47 btt4
    Text: SEC j i i r / W Z M O S Field E ffe ct P o w e r T ra n sisto r J _ 2SK470 v ^ — MOS F E T X f m I i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 7 0 ii, F E T t\ X f y f > d c > ;< — i 7 • - t — • 'J 1 / —


    OCR Scan     		PDF 2SK470 2SK470Ã PWS10 2SK470 2sk47 btt4

    AH5E

    Abstract: ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262
    Text: NEC - f — S 7 • Ss— K Compound Transistor FA1A4P 'J □ > S#lF*3ìScNPN:i: f t W t 'iM i ^ m m l R i = 10 kQ , R 2 = 47 kQ ) 2 .8 + 0.2 0.65—8; i s 1.5 O F N 1 A 4 P t => > 7 ° ' ) 9 y 9 ') T l È f f l T 'è i t . II s zj u 9 9 •^ - x f S i ' I E


    OCR Scan     		PDF PWS10 AH5E ic 3773 g0532 JE 33 T108 marking "l34" AH-045 fI0262

    2SK163

    Abstract: 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466
    Text: NEC j m = t= r iv r x J u n c t io n Field E ffe c t T r a n s is to r A 2SJ44 V 3 h = 7 > i> * 9 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Low Noise Amplifier ^ • » 0 / P A C K A G E D IM EN SIO N S ^/FEATU RES Unit : mm O ¡15I f EE, H i g h


    OCR Scan     		PDF 02SK163 SC-43B 545tS4i8 2SK163 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466

    ail4m

    Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
    Text: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±


    OCR Scan     		PDF Ta-25Â ail4m FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M

    b0958

    Abstract: JE 33 PA33 R054-2 je 340 sis 5511 jl06 A0246
    Text: v—S •S' î a - ê - h ^ Com pound Transistor A N I L4M # ftfó m i t o 7 / M x i £ i / i £ R i = 47 f t j t kQ , L T v ^ R 2= 4 7 ( T O î : mm t o kû) c O A A 1 L 4 M ¿1 =1 > 7 ° U / > ? U - C fë ffl X " £ £ t e ( T a = 25 ° C ) g II a u 9 9


    OCR Scan     		PDF SC-43B b0958 JE 33 PA33 R054-2 je 340 sis 5511 jl06 A0246

    L46R

    Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
    Text: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l


    OCR Scan     		PDF uPA607T PA606T l--62 B484S± L46R 96 mfu DIODE HR 8665 PA607T 4N51 5M1E 328l

    transistor AFR 16

    Abstract: BAIL4M transistor afr 22 bn1l4m ba1l4m T108
    Text: I ¿Y I fK NEC m ïâ-ê- h ^ > > x 9 Compound Transistor iír / v - r z B A I L 4M í£ í / t Ñ 1 N P N X fcf f l r i s T J U 9 4t $ o £ W T H 1 ¥ - Í í L • m m ★ x f f i t Í L £ 1*1 j t L T V ' á t o ( R j = 4 7 kQ , R 2 = 4 7 k f í ) ÖE


    OCR Scan     		PDF Cycleg50 transistor AFR 16 BAIL4M transistor afr 22 bn1l4m ba1l4m T108

    TRANSISTOR D 2627

    Abstract: SG3627 20ii2 SG3627J SG1627J
    Text: SG1627/SG2627/SG3627 SILICON DUAL HIGH-CURRENT OUTPUT DRIVER LINEAR INTEG RATED CIRCUITS DESCRIPTION FEATURES The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each


    OCR Scan     		PDF SG1627/SG2627/SG3627 500mA 300ns SG1524 SG1627 MIL-STD-883 SG1627 500mA SG1627J/883B SG1627J TRANSISTOR D 2627 SG3627 20ii2 SG3627J

    TRANSISTOR D 2627

    Abstract: No abstract text available
    Text: SG1627ISG2627/SG3627 SILICON ΠN E ^L LINEAR INTEG RATED CIRCUITS DUAL HIGH-CURRENT OUTPUT DRIVER D E S C R IP T IO N FEA TU R ES The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each


    OCR Scan     		PDF SG1627ISG2627/SG3627 500mA 300ns SG1524 MIL-STD-883 SG1627 16-PIN SG1627J/883B SG1627J SG2627J TRANSISTOR D 2627

    SG3627

    Abstract: TRANSISTOR D 2627 SG1627J SG1627 SG3627J constant current source with 500mA SG2627 SG1627J/883B SG1524 Scans-003836
    Text: SG1627/SG2627/SG3627 SILIC O N GENERÄL LINEAR INTEGRATED CIRCUITS DUAL HIGH-CURRENT OUTPUT DRIVER D E S C R IP T IO N FE A TU R E S The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each


    OCR Scan     		PDF SG1627/SG2627/SG3627 SG1627 500mA 16-PIN SG1627J/883B SG1627J SG2627J SG3627J SG3627 TRANSISTOR D 2627 SG3627J constant current source with 500mA SG2627 SG1524 Scans-003836

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    rotary transformer

    Abstract: HA12062AMP HA12133MP HD49212 2sc1213 TRANSISTOR equivalent audio tape head preamp circuit S2-a22 gl 9608 HITACHI BANDPASS FILTER MAGNETIC HEAD
    Text: HA12133M P PRE, REC, Equalizer IC for R-DAT Description HAL2133M P The HA12133MP is a bipolar IC developed for RDAT rotary head digital audio tape recorder . It incorporates a playback am plifier, equalizer amplifier, and recording amplifier on one chip.


    OCR Scan     		PDF HA12133MP- HA12133MP HA12133MP mp-44) MP-44 rotary transformer HA12062AMP HD49212 2sc1213 TRANSISTOR equivalent audio tape head preamp circuit S2-a22 gl 9608 HITACHI BANDPASS FILTER MAGNETIC HEAD

    TRANSISTOR D 2627

    Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage


    OCR Scan     		PDF r-33-13 T0126 15A3DIN TRANSISTOR D 2627 transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546