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    TRANSISTOR K 799 Search Results

    TRANSISTOR K 799 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR K 799 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PDTA143XE

    Abstract: SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA143XE PNP resistor-equipped transistor Product specification 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


    Original
    M3D173 PDTA143XE MAM345 SC-75 OT416) SCA63 115002/00/01/pp8 PDTA143XE SC-75 PDF

    PDTC143XE

    Abstract: PDTA143XE SC-75 PDTA143 PDTA143X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 29 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 kΩ and 10 kΩ


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    M3D173 PDTC143XE MAM346 SC-75; OT416) 115002/00/02/pp8 PDTC143XE PDTA143XE SC-75 PDTA143 PDTA143X PDF

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Sep 21 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


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    M3D173 PDTC124XE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75 PDF

    PDTA124XE

    Abstract: PDTC124XE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification Supersedes data of 1998 Nov 25 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES • Built-in bias resistors R1 and R2 typ. 22 kΩ and 47 kΩ


    Original
    M3D173 PDTA124XE MAM345 SC-75) 115002/00/03/pp8 PDTA124XE PDTC124XE SC-75 PDF

    PDTC114YE

    Abstract: SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 19 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ and 47 kΩ


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    M3D173 PDTC114YE 115002/00/03/pp8 PDTC114YE SC-75 PDF

    BP317

    Abstract: MMBTA42 MMBTA92 254-D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN


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    M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8 BP317 MMBTA42 MMBTA92 254-D PDF

    MMBTA92

    Abstract: BP317 MMBTA42
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA92 PNP high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP high-voltage transistor MMBTA92 PINNING FEATURES • Low current max. 100 mA PIN


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    M3D088 MMBTA92 MMBTA42. MAM256 603506/01/pp8 MMBTA92 BP317 MMBTA42 PDF

    PDTC123ET

    Abstract: marking code 10 sot23 PDTA123JT
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES • Built-in bias resistors typ 2.2 kΩ


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    M3D088 PDTA123JT MAM100 115002/01/pp8 PDTC123ET marking code 10 sot23 PDTA123JT PDF

    BP317

    Abstract: MMBT2222A PMBT2907A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V).


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    M3D088 MMBT2222A PMBT2907A. MAM255 603506/01/pp8 BP317 MMBT2222A PMBT2907A PDF

    MMBT3906 PHILIPS

    Abstract: transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3906 PNP switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification PNP switching transistor MMBT3906 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).


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    M3D088 MMBT3906 MMBT3904. MAM256 603506/01/pp8 MMBT3906 PHILIPS transistor MMBT3906 marking code 10 sot23 marking code ce SOT23 BP317 MMBT3904 MMBT3906 PDF

    marking code 10 sot23

    Abstract: BP317 MMBT3904 MMBT3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT3904 NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V).


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    M3D088 MMBT3904 MMBT3906. MAM255 603506/01/pp8 marking code 10 sot23 BP317 MMBT3904 MMBT3906 PDF

    PDTA124EEF

    Abstract: SC-89 BP317 PDTA124E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each


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    M3D425 PDTA124EEF 613514/01/pp8 PDTA124EEF SC-89 BP317 PDTA124E PDF

    BP317

    Abstract: PMBT5401 PMBT5550
    Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 PMBT5401 PNP high-voltage transistor Product specification Supersedes data of 1997 Apr 09 1999 Apr 15 Philips Semiconductors Product specification PNP high-voltage transistor PMBT5401 FEATURES PINNING • Low current max. 300 mA


    Original
    M3D088 PMBT5401 PMBT5550. MAM256 SCA63 115002/00/03/pp8 BP317 PMBT5401 PMBT5550 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 PINNING FEATURES • Low current max. 100 mA PIN • High voltage (max. 300 V).


    Original
    M3D088 MMBTA42 MMBTA92. MAM255 603506/01/pp8 PDF

    PDTC114EE

    Abstract: PDTA114EE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 26 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 10 kΩ each


    Original
    M3D173 PDTC114EE 115002/00/04/pp8 PDTC114EE PDTA114EE SC-75 PDF

    PDTA123JE

    Abstract: PDTC123JE SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor Product specification Supersedes data of 1998 Aug 03 1999 May 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES • Built-in bias resistors R1 and R2 typ. 2.2 and 47 kΩ


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    M3D173 PDTC123JE MAM346 SC-75; OT416) 115002/00/03/pp8 PDTA123JE PDTC123JE SC-75 PDF

    2SK799

    Abstract: 100C
    Text: N E C ELECTRONICS INC 98D 18948 D ~/3 T ~ - N-CHANNELMOS FIELD EFFECT POWER TRANSISTOR "t ô D E S C R IP T IO N D e L.427S25 0aia^4fl T I 2SK799 The 2 S K 799 is N-channel MOS Field Effect Power Transistor P A C K A G E D IM E N S IO N S in millimeters (Inches


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    b427S2S 2SK799 2SK799 100C PDF

    PDTC143XE

    Abstract: Transistor B 886 PDTA143 PDTA143XE PDTA143X
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143XE NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 10 k£2


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    PDTC143XE SC-75 OT416) PDTA143XE. 115002/00/02/pp8 PDTC143XE Transistor B 886 PDTA143 PDTA143XE PDTA143X PDF

    MARKING CODE ht9

    Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
    Text: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2


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    SCA64 15002/00/01/pp8 MARKING CODE ht9 MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking PDF

    PDTA124XE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 Nov 25 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTA124XE PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 typ. 22 k£2 and 47 k£2


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    PDTA124XE SC-75 OT416) PDTC124XE. 115002/00/03/pp8 PDTA124XE PDF

    PDTA143Z

    Abstract: PDTC143Z PDTA143
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification PDTC143ZT NPN resistor-equipped transistor FEATURES PINNING • Built-in bias resistors R1 and R2 typ. 4.7 k£2 and 47 k£2


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    PDTC143ZT 115002/00/03/pp8 PDTA143Z PDTC143Z PDTA143 PDF

    TAA 785 A IC

    Abstract: No abstract text available
    Text: HARKTECH INTERNATIONAL ~Û7 I > F | S 7 ci citI SS TRANSISTOR COUPLER 5799655 M A R K T E C H INTERNATIONAL 87D 00124 DOOD1SM D T-H-J-ÏZ M TPC6320 INFRARED LED+PHOXO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL ISOLATOR • PROGRAMMABLE CONTROLLERS A -H • SOLID STATE RELAY


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    TPC6320 TPC6320 TAA 785 A IC PDF

    AN 6752

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 15 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TU FEATURES • Built-in bias resistor R1 typ. 10 k£2


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    PDTA114TU OT323) OT323 PDTC114TU. 115002/00/03/pp8 AN 6752 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 29 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT PINNING FEATURES • Built-in bias resistor R1 typ. 4.7 k£2


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    PDTC143TT 115002/00/02/pp8 PDF