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    TRANSISTOR K10A60D Search Results

    TRANSISTOR K10A60D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    k10a60d

    Abstract: No abstract text available
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK10A60D k10a60d

    k10a60d

    Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK10A60D k10a60d K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D

    K10A60

    Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK10A60D K10A60 k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200

    k10a60d

    Abstract: No abstract text available
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original     		PDF TK10A60D k10a60d

    k10a60d

    Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: |Yfs| = 6.0S (typ.)


    Original     		PDF TK10A60D k10a60d toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d