TRANSISTOR K1119 POWER SWITCHING Search Results

TRANSISTOR K1119 POWER SWITCHING Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MGN1S1208MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7		Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

TRANSISTOR K1119 POWER SWITCHING Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k1119 Abstract: transistor k1119 power switching Text: FIELD EFFECT TRAN SISTO R 2SK1119 SILICON N CHANNEL MOS TYPE a:-MOSii HIGH S P EE D ,H IG H CURRENT SWITCHING A P P LIC ATIO N S. INDUSTRIA L APPLICATIO NS SWITCHING POWER SUPPLY A PP LIC ATIO NS. U n i t in mm 10.3MAI. *3.6±0.2 îï FEATURES: • Low D ra in -S o u r c e ON R e s is ta n c e :	OCR Scan	2SK1119 Puls700 k1119 transistor k1119 power switching	PDF
k1119 Abstract: No abstract text available Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 k1119	PDF
k1119 Abstract: 2SK1119 2-10P1B Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : \|Yfs\| = 2.0 S (typ.) Unit: mm	Original	2SK1119 k1119 2SK1119 2-10P1B	PDF
K1119 Abstract: 2SK1119 2-10P1B Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 K1119 2SK1119 2-10P1B	PDF
K1119 Abstract: 2SK1119 2-10P1B Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 K1119 2SK1119 2-10P1B	PDF
k1119 Abstract: 2-10P1B 2SK1119 Text: 2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII.5 2SK1119 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK1119 k1119 2-10P1B 2SK1119	PDF