sf 128 transistor
Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Text: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.
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SC73P2602
SC73P2602
SC73C16
sf 128 transistor
TRANSISTOR SF 128
Triode 8050
marking P53 transistor
ic marking k52
SC73P16
bd 8050 TRANSISTOR
part MARKING k48
marking k47
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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BFR106
Abstract: Q62702-F1219 GMA marking Transistor BFR 80 BFr pnp transistor
Text: BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OT-23
Q62702-F1219
900MHz
Dec-11-1996
BFR106
Q62702-F1219
GMA marking
Transistor BFR 80
BFr pnp transistor
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toshiba audio power amplifier
Abstract: K2162 toshiba Ta 2SJ338 2SK2162 K2-16 Toshiba 2SJ
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2162 Audio Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338
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2SK2162
2SJ338
SC-64
toshiba audio power amplifier
K2162
toshiba Ta
2SJ338
2SK2162
K2-16
Toshiba 2SJ
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RF NPN POWER TRANSISTOR 2.5 GHZ
Abstract: Q62702-F1575 marking 17 sot343
Text: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-343
Q62702-F1575
900MHz
Jan-20-1997
RF NPN POWER TRANSISTOR 2.5 GHZ
Q62702-F1575
marking 17 sot343
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2gma
Abstract: Q62702-F938 121-996
Text: BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-23
Q62702-F938
S21/S12|
Dec-12-1996
2gma
Q62702-F938
121-996
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: 2SJ338 2SK2162 K2162 Toshiba 2SJ toshiba marking code transistor
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm
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2SK2162
2SJ338
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
2SJ338
2SK2162
K2162
Toshiba 2SJ
toshiba marking code transistor
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: Toshiba 2SJ toshiba marking code transistor
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338 Unit: mm
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2SK2162
2SJ338
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Toshiba 2SJ
toshiba marking code transistor
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: Toshiba 2SJ 2sk2162
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications Unit: mm • High breakdown voltage: VDSS = 180 V • High forward transfer admittance: |Yfs| = 0.7 S typ. • Complementary to 2SJ338
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2SK2162
2SJ338
SC-64
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Toshiba 2SJ
2sk2162
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RF TRANSISTOR 10GHZ
Abstract: bipolar transistor ghz s-parameter tv sirius RF NPN POWER TRANSISTOR C 10-12 GHZ DSP 10 ghz DSP frequency 10 ghz MIPI omnivision RF TRANSISTOR 10GHZ low noise sdars ARM926EJ-S
Text: BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 Industrial & Multimarket Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP720F
BFP720F:
RF TRANSISTOR 10GHZ
bipolar transistor ghz s-parameter
tv sirius
RF NPN POWER TRANSISTOR C 10-12 GHZ
DSP 10 ghz
DSP frequency 10 ghz
MIPI omnivision
RF TRANSISTOR 10GHZ low noise
sdars
ARM926EJ-S
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Transistor BFT 93
Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package
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OT-23
Q62702-F1063
Dec-12-1996
Transistor BFT 93
Transistor BFT 10
Q62702-F1063
MARKING 93
40mAIC
BFT93
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Untitled
Abstract: No abstract text available
Text: BFP720ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-15 RF & Protection Devices Edition 2012-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BFP720ESD
OT343
OT343-PO
OT343-FP
BFP720ESD:
OT323-TP
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Untitled
Abstract: No abstract text available
Text: BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.
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BFP640FESD
BFP640FESD:
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k72 transistor
Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224
Text: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.
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MPS-K20,
MPS-K21
MPS-K22
MPS-A20
MPS-K70,
MPS-K71
MPS-K72
MPS-A70
MPS-K20/MPS-K70
10VDC
k72 transistor
transistor k72
2N5143
k72 npn
TRANSISTOR C 2026
544S
K70 Package
TP6224
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NPN Darlington Transistor
Abstract: MP6005
Text: TOSHIBA MP6005 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 MP600 5 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR CONTROL APPLICATIONS. Package with H eat Sink Isolated to Lead (SIP 14 Pin)
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MP6005
MP600
--100A//iS
NPN Darlington Transistor
MP6005
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marking BFG
Abstract: sot 223 marking code 4c
Text: SIEMENS BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1321
OT-223
900MHz
marking BFG
sot 223 marking code 4c
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1321
BFG194
OT-223
23SbDS
012177b
Q1E1777
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Mje 1532
Abstract: BFP194
Text: SIEMENS BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1347
OT-143
BFP194
0535tjQS
900MHz
23Sb05
Mje 1532
BFP194
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • f T = 5.5GHz • Gold metalization for high reliability ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration
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Q62702-F1575
OT-343
fi235bDS
900MHz
fl235b05
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bft93
Abstract: transistor BF 199
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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BFT93
BFT93
Q62702-F1063
OT-23
900MHz
transistor BF 199
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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BFT93
Q62702-F1063
OT-23
235b05
G122211
900MHz
235fc
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BFR106
Abstract: 2I k
Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OT-23
Q62702-F1219
BFR106
900MHz
BFR106
2I k
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Transistor BFr 99
Abstract: No abstract text available
Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 PNP ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1219
OT-23
flE35b05
900MHz
Transistor BFr 99
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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