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    TRANSISTOR KF Search Results

    TRANSISTOR KF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    D1316

    Abstract: 2SA1744
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is


    Original     		PDF 2SA1744 2SA1744 D1316

    2SA1841

    Abstract: darlington transistor for audio power application
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1841 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.


    Original     		PDF 2SA1841 2SA1841 darlington transistor for audio power application

    2SA1871

    Abstract: 2sc4942
    Text: DATA SHEET SILICON TRANSISTOR 2SA1871 PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SA1871 is a transistor developed for high-speed high- PACKAGE DRAWING UNIT: mm voltage switching and is ideal for use in switching elements such


    Original     		PDF 2SA1871 2SA1871 2SC4942 C11531E) 2sc4942

    MCT8 opto

    Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
    Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR


    OCR Scan     		PDF MCT210 MCT26 MCT66 C1255 10TT1. MCT8 opto c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35

    A7800

    Abstract: 34G3S ic 7800 kf 1300
    Text: FZ 1200 R 16 KF 1 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,016 RthCK pro Baustein / per module 0,008 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values


    OCR Scan     		PDF G0Q2G25 A7800 34G3S ic 7800 kf 1300

    Untitled

    Abstract: No abstract text available
    Text: FS 8 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V ces Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,26 R th J C DC, pro Zweig / per arm 1,56


    OCR Scan     		PDF

    alps stec

    Abstract: 25r06
    Text: FS 25 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values •c Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,21 RthJC DC, pro Zweig / per arm 1,25


    OCR Scan     		PDF 3MG32R7 alps stec 25r06

    Untitled

    Abstract: No abstract text available
    Text: FF 25 R 12 KF 2 Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften 1Electrical properties RthCK Höchstzulässige W erte Maximum rated values Thermal properties pro Baustein / per module D C , pro Zweig / per arm pro Baustein / per module


    OCR Scan     		PDF 34032T7

    Untitled

    Abstract: No abstract text available
    Text: FZ 300 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 1200 Thermal properties RthJC DC, pro Baustein / per module 0 ,0 6 3 RthCK pro Baustein / per module


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 300 R 06 KF 2 Therm ische Eigenschaften Therm al properties 0,05 DC, pro Baustein / per module 0,10 DC, pro Zweig / per arm pro Baustein / per module 0,03 RthCK 0,06 pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties


    OCR Scan     		PDF 3403HT7

    Untitled

    Abstract: No abstract text available
    Text: FS 15 R 06 KF 2 Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0,26 Rthjc DC, pro Zweig / per arm 1,56 Transistor Transistor E lektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 15


    OCR Scan     		PDF 00G2Gbb

    Untitled

    Abstract: No abstract text available
    Text: FZ 360 R 17 KF Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 1700 V 360 A V CES Thermal properties RthJC DC, pro Baustein / per module 0,035 RthCK pro Baustein / per module


    OCR Scan     		PDF R17KF1 360RT7

    Untitled

    Abstract: No abstract text available
    Text: FS 50 R 12 KF Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,068 R th J C DC, pro Zweig / per arm 0,410 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200 V 50


    OCR Scan     		PDF 34032T7 00D2Q74

    Untitled

    Abstract: No abstract text available
    Text: FS 25 R 12 KF 2 Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,104 °C/W DC, pro Zweig/per arm 0,625 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 1200


    OCR Scan     		PDF Q0G2Q71

    F 300 R 1200 KF

    Abstract: FZ 76 1000
    Text: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150


    OCR Scan     		PDF 15ung F 300 R 1200 KF FZ 76 1000

    F 300 R 1200 KF

    Abstract: No abstract text available
    Text: FZ 200 R 12 KF Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcES 1200 V 200 A 150


    OCR Scan     		PDF 34032T7 F 300 R 1200 KF

    TRANSISTOR BI 187

    Abstract: No abstract text available
    Text: FZ 300 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Thermal properties 0,062 °C/W DC, pro Baustein / per module RHhüc , RthCK 0,03 pro Baustein / per module °C/W Maximum rated values VcES lc 1200


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK Thermal properties DC, pro Baustein/per module DC, pro Zweig / per arm pro Baustein/per module


    OCR Scan     		PDF 300R12tCFZ

    Untitled

    Abstract: No abstract text available
    Text: FZ 400 R 12 KF 2 Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 400 A Thermal properties RthJC DC, pro Baustein / per module 0,052 °C/W R» pro Baustein / per module 0,03 150 °C


    OCR Scan     		PDF FZUJCR12KF 3M032T7

    Untitled

    Abstract: No abstract text available
    Text: FZ 800 R 12 KF 1 Thermische Eigenschaften Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 800 A Thermal properties Rthjc DC, pro Baustein /p e r module 0,02 °C/W RthCK pro Baustein / per module 0,01 °C/W


    OCR Scan     		PDF 125PC,