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    TRANSISTOR KF5N50 102 Search Results

    TRANSISTOR KF5N50 102 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KF5N50 102 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor KF5n50

    Abstract: KF5N50 mosfet KF5N50 KF5N50P KF5N50F transistor KF5n50 102 FZ 101 KF5N50FZ
    Text: SEMICONDUCTOR KF5N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KF5N50P/F/PZ/FZ KF5N50P, KF5N50PZ KF5N50P KF5N50PZ Fig15. Fig16. Fig17. transistor KF5n50 KF5N50 mosfet KF5N50 KF5N50F transistor KF5n50 102 FZ 101 KF5N50FZ PDF

    kf5n50

    Abstract: transistor KF5n50 mosfet KF5N50 KF5N50DZ transistor KF5n50 102 kf5n50 ds KF5N50D kf5n50ds DIODE MARKING 534 "Field Effect Transistor"
    Text: SEMICONDUCTOR KF5N50DR/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		KF5N50DR/DS 150ns Fig13. Fig14. Fig15. kf5n50 transistor KF5n50 mosfet KF5N50 KF5N50DZ transistor KF5n50 102 kf5n50 ds KF5N50D kf5n50ds DIODE MARKING 534 "Field Effect Transistor" PDF

    KF5N50

    Abstract: transistor KF5n50 KF5N50D mosfet KF5N50
    Text: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KF5N50D/DZ Fig12. Fig13. Fig14. Fig15. KF5N50 transistor KF5n50 KF5N50D mosfet KF5N50 PDF

    kf5n50 ds

    Abstract: transistor KF5n50 KF5N50 KF5N50DZ
    Text: SEMICONDUCTOR KF5N50DZ/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		150ns KF5N50DS) 300ns KF5N50DZ) KF5N50DZ/DS Fig13. Fig14. Fig15. kf5n50 ds transistor KF5n50 KF5N50 KF5N50DZ PDF

    transistor KF5n50

    Abstract: KF5N50FS KF5N50 KF5N50 fs mosfet KF5N50 FS transistor KF5n50 fs 102 transistor KF5n50fs KF5N50F mosfet KF5N50 KF5N50P
    Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		150ns KF5N50PS/FS KF5N50PS EnerFig14. Fig15. Fig16. Fig17. transistor KF5n50 KF5N50FS KF5N50 KF5N50 fs mosfet KF5N50 FS transistor KF5n50 fs 102 transistor KF5n50fs KF5N50F mosfet KF5N50 KF5N50P PDF

    transistor KF5n50

    Abstract: KF5N50 KF5N50D mosfet KF5N50
    Text: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KF5N50D/DZ Fig13. Fig14. Fig15. transistor KF5n50 KF5N50 KF5N50D mosfet KF5N50 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		KF5N50PS/FS KF5N50PS 150ns KF5N50FS Fig15. Fig16. Fig17. PDF

    KF5N50DS

    Abstract: KF5N50 transistor KF5n50 kf5n50 ds fast recovery diode 400v 5A transistor KF5n50ds mosfet KF5N50 IS43A mosfet KF5N50DS
    Text: SEMICONDUCTOR KF5N50DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for


    Original     		150nS KF5N50DS Fig12. Fig13. Fig14. Fig15. KF5N50DS KF5N50 transistor KF5n50 kf5n50 ds fast recovery diode 400v 5A transistor KF5n50ds mosfet KF5N50 IS43A mosfet KF5N50DS PDF

    transistor KF5n50

    Abstract: KF5N50 mosfet KF5N50 KF5N50PZ
    Text: SEMICONDUCTOR KF5N50PZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KF5N50PZ Fig13. Fig14. Fig15. transistor KF5n50 KF5N50 mosfet KF5N50 KF5N50PZ PDF