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    TRANSISTOR KTC3209 Search Results

    TRANSISTOR KTC3209 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KTC3209 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    KTC3209

    Abstract: transistor KTC3209 ktc3209 y KTA1281
    Text: SEMICONDUCTOR KTC3209 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage : VCE sat =0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTA1281.


    Original     		PDF KTC3209 KTA1281. KTC3209 transistor KTC3209 ktc3209 y KTA1281

    ktc3209 y

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3209 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage : VCE sat =0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTA1281.


    Original     		PDF KTC3209 KTA1281. ktc3209 y

    KTC3209

    Abstract: ktc3209 y transistor KTA1281 KTA1281
    Text: SEMICONDUCTOR KTC3209 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. B D FEATURES A ᴌLow Collector Saturation Voltage : VCE sat =0.5V(Max.) (IC=1A) P DEPTH:0.2 ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ.)


    Original     		PDF KTC3209 KTA1281. KTC3209 ktc3209 y transistor KTA1281 KTA1281

    kta1281

    Abstract: ktc32 transistor KTA1281 ktA1281 Y KTC3209
    Text: KTA1281 TO-92L Transistor PNP TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 3. BASE Features — — — 1 2 7.800 8.200 3 0.600 0.800 Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) High Speed Switching time: tstg=1.0 S(Typ.). Complementary to KTC3209.


    Original     		PDF KTA1281 O-92L O-92L KTC3209. -10mA, -100A, kta1281 ktc32 transistor KTA1281 ktA1281 Y KTC3209

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1281 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES z Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) z High Speed Switching Time: tstg=1.0 S(Typ.).


    Original     		PDF O-92L KTA1281 O-92L KTC3209.

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1281 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. B D FEATURES A Low Collector Saturation Voltage : VCE sat =-0.5V(Max.) (IC=-1A) P DEPTH:0.2 High Speed Switching Time : tstg=1.0 S(Typ.)


    Original     		PDF KTA1281 KTC3209.

    KTA1281

    Abstract: KTC3209
    Text: SEMICONDUCTOR KTA1281 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. B D FEATURES A ᴌLow Collector Saturation Voltage : VCE sat =-0.5V(Max.) (IC=-1A) P DEPTH:0.2 ᴌHigh Speed Switching Time : tstg=1.0ỌS(Typ.)


    Original     		PDF KTA1281 KTC3209. KTA1281 KTC3209

    KTA1281

    Abstract: KTC3209
    Text: SEMICONDUCTOR KTA1281 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. B D FEATURES A Low Collector Saturation Voltage : VCE sat =-0.5V(Max.) (IC=-1A) P DEPTH:0.2 High Speed Switching Time : tstg=1.0 S(Typ.)


    Original     		PDF KTA1281 KTC3209. KTA1281 KTC3209

    transistor KTA1281

    Abstract: KTA1281 KTC3209 ktc3209 y
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors KTA1281 TO-92L TRANSISTOR PNP 1. EMITTER FEATURES z Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) z High Speed Switching time: tstg=1.0 S(Typ.).


    Original     		PDF O-92L KTA1281 O-92L KTC3209. transistor KTA1281 KTA1281 KTC3209 ktc3209 y

    KTA1281

    Abstract: transistor KTA1281 KTC3209
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KTA1281 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURES z Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) z High Speed Switching time: tstg=1.0 S(Typ.).


    Original     		PDF O-92MOD KTA1281 O-92MOD KTC3209. KTA1281 transistor KTA1281 KTC3209

    KTA1281

    Abstract: ktA1281 Y ktc32
    Text: KTA1281 TO-92MOD Transistor PNP TO-92MOD 1. EMITTER 1 2 3 5.800 6.200 2. COLLECTOR 3. BASE 8.400 8.800 0.900 1.100 Features — — — 0.400 0.600 Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A) High Speed Switching time: tstg=1.0 S(Typ.).


    Original     		PDF KTA1281 O-92MOD O-92MOD KTC3209. -10mA, -100A, KTA1281 ktA1281 Y ktc32

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


    Original     		PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


    Original     		PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    mn2510

    Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
    Text: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @


    Original     		PDF OT-223 STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 mn2510 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"

    KTC3209

    Abstract: KTA1281 ktc3209 y
    Text: SEMICONDUCTOR KTC3209 TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURE • Low Saturation Voltage. : VcE sat =0.5V(MAX) (IC=1A) • High Speed Switching Time : tstg=l-011 S(TYP.)


    OCR Scan     		PDF KTC3209 KTA1281. KTA1281 ktc3209 y

    KTC3209

    Abstract: KTA1281 ktc3209 y transistor KTC3209
    Text: SEMICONDUCTOR KTC3209 TECH NICAL D A T A EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURE • Low Saturation Voltage. : VCE sat =0.5V(MAX) (IC=1A) • High Speed Switching Time : t iR=l .0 n SiTYP.) • Complementary to KTA1281.


    OCR Scan     		PDF KTC3209 KTA1281. KTC3209 KTA1281 ktc3209 y transistor KTC3209

    KTA1281

    Abstract: transistor KTA1281 ic 3020 KTC3209 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 01PSo ktc3209 y
    Text: K E C SEMICONDUCTOR TECHNICAL KOREA ELECTRONICS CO.,LTD. KTA1281 D A TA EPITAXIAL PLANAR PNP TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VcE sat =- 0 .5 V (Max.) (IC=-1A) • High Speed Switching Time : tstg=1.0//S(Typ.)


    OCR Scan     		PDF KTA1281 KTC3209. T0-92L transistor KTA1281 ic 3020 KTC3209 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 01PSo ktc3209 y