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    TRANSISTOR KU 612 Search Results

    TRANSISTOR KU 612 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR KU 612 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2394

    Abstract: transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm hetero junction to create high mobility electrons.


    Original     		PDF NE24283B NE24283B D2394 transistor d1071 d1071 transistor transistor d774 transistor NEC D 882 p transistor D798 D774 transistor D1547 TRANSISTOR d1677 TRANSISTOR D405

    The Japanese Transistor Manual 1981

    Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32484A NE32484A NE32484A-SL The Japanese Transistor Manual 1981 japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking

    D2504 transistor

    Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low


    Original     		PDF NE329S01 NE329S01 NE329S01-T1 D2504 transistor d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817

    mmds down converter

    Abstract: HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G
    Text: OFF-THE-SHELF INSIDE. HITTITE MICROWAVE CORPORATION AUTUMN 2001 1 Watt and 0.5 Watt Power Amplifiers at 1.9 GHz, 2.4 GHz, 3.5 GHz and 5.8 GHz Now Available! New High Efficiency MMIC GaAs InGaP HBT Designs for +3V and +5V Platforms Hittite is expanding its GaAs InGaP HBT product line by adding eight new power


    Original     		PDF OC-48 OC-192 mmds down converter HMC394LP4 Crystal Radio MMIC Downconverter ku band HMC409 c-Band mmic core chip ku vsat "buffer amplifier" HMC394 HMC406MS8G HMC407MS8G

    TDA 16846 P

    Abstract: tda 2750 tda 4605 application note TDA 1031 transistor Siemens 14 S S 92 K2k transistor IC tda 16846 TDA 1060 f TDA 16846 TDA4605
    Text: Version 1.0 , March 2000 Application Note AN-SMPS-CoolMOS-1 SMPS with CoolMOS and TDA 16846x Author: Peter Preller Published by Infineon Technologies AG http://www.infineon.com Power Conversion Titel: Infineon Logo 4c.eps Erstellt von: Adobe Illustrator(R) 8.0


    Original     		PDF 16846x PostScript-Druc90 Room14J1 Room1101 TDA 16846 P tda 2750 tda 4605 application note TDA 1031 transistor Siemens 14 S S 92 K2k transistor IC tda 16846 TDA 1060 f TDA 16846 TDA4605

    sot23 transistor marking JY

    Abstract: transistor sc-70 marking codes sot23 mark code kx top marking JY sot23 transistor SOT-23 marking code J6 KY transistor TCM809 TCM810 TCM809LENB713 TCM809LVLB713 TCM810
    Text: TCM809/TCM810 3-Pin Microcontroller Reset Monitors Features General Description • Precision VDD Monitor for 2.5V, 3.0V, 3.3V, 5.0V Nominal System Voltage Supplies • 140 msec Minimum RESET Time-Out Period • RESET Output to VDD = 1.0V TCM809 • Low Supply Current, 9 µA (typ.)


    Original     		PDF TCM809/TCM810 TCM809) SC-70 OT-23B SC-70 OT-23, TCM809 TCM810 Applica34-8870 sot23 transistor marking JY transistor sc-70 marking codes sot23 mark code kx top marking JY sot23 transistor SOT-23 marking code J6 KY transistor TCM809 TCM810 TCM809LENB713 TCM809LVLB713

    transistor SOT-23 marking code J6

    Abstract: TCM809 TCM810 transistor sc-70 marking codes A1 vNB
    Text: TCM809/TCM810 3-Pin Microcontroller Reset Monitors Features General Description • Precision VDD Monitor for 2.5V, 3.0V, 3.3V, 5.0V Nominal System Voltage Supplies • 140 msec Minimum RESET Time-Out Period • RESET Output to VDD = 1.0V TCM809 • Low Supply Current, 9 µA (typ.)


    Original     		PDF TCM809/TCM810 TCM809) SC-70 OT-23B SC-70 OT-23, TCM809 TCM810 Applica34-8870 transistor SOT-23 marking code J6 transistor sc-70 marking codes A1 vNB

    Untitled

    Abstract: No abstract text available
    Text: TCM809/TCM810 3-Pin Microcontroller Reset Monitors Features General Description • Precision VDD Monitor for 2.5V, 3.0V, 3.3V, 5.0V Nominal System Voltage Supplies • 140 msec Minimum RESET Time-Out Period • RESET Output to VDD = 1.0V TCM809 • Low Supply Current, 9 µA (typ.)


    Original     		PDF TCM809/TCM810 TCM809) SC-70 OT-23B SC-70 OT-23, TCM809 TCM810 ar34-8870

    SC70-3L

    Abstract: No abstract text available
    Text: TCM809/TCM810 3-Pin Microcontroller Reset Monitors Features General Description • Precision VDD Monitor for 2.5V, 3.0V, 3.3V, 5.0V Nominal System Voltage Supplies • 140 msec Minimum RESET Time-Out Period • RESET Output to VDD = 1.0V TCM809 • Low Supply Current, 9 µA (typ.)


    Original     		PDF TCM809/TCM810 TCM809) SC-70 OT-23B SC-70 OT-23, TCM809 TCM810 dri778-366 SC70-3L

    two transistor forward

    Abstract: siemens RC snubber smps transformer Design half bridge smps transformer design full bridge smps basic PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES Single phase half wave bridge converter 24 volt output smps design AN-CoolMOS-02 resonant single ended forward converter
    Text: Version 1.0 , June 2000 Application Note AN-CoolMOS-08 SMPS Topologies Overview Author: Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g SMPS Topologies Overview This application note gives a briefly overview of major state of the art SMPS topologies.


    Original     		PDF AN-CoolMOS-08 Room14J1 Room1101 two transistor forward siemens RC snubber smps transformer Design half bridge smps transformer design full bridge smps basic PUSHPULL CONVERTER TRANSFORMER DESIGN NOTES Single phase half wave bridge converter 24 volt output smps design AN-CoolMOS-02 resonant single ended forward converter

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


    Original     		PDF AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2

    220v ac to 12V 10A SMPS

    Abstract: smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps
    Text: Switch Mode Power Supplies Discretes & Standard ICs Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Battery Charger and Adapter Front End Inrush PFC * Flyback Pout > 70W STBRXXX Bridge + + AC Post Regulation * TSM10x PWM + CV & CC


    Original     		PDF TSM10x TSM101 TSM102 TSM103 TSM104 PowerSO-10, Max220, Max247, ISOWATT220, 220v ac to 12V 10A SMPS smps 1000W 48V SMPS 1000w smps 500w half bridge 220v ac to 12V 20A SMPS TL431 928 smps 2000W VIPer smps 20w 12V flyback 1000w 500w half bridge smps

    HMXR-5001

    Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
    Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog


    Original     		PDF

    D2504 transistor

    Abstract: d636 transistor d1405 transistor transistor D454 transistor d717 d717* transistor d1944 transistor d717 transistor D1910 transistor d525
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    The Japanese Transistor Manual 1981

    Abstract: NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    siemens GR 60 rectifier

    Abstract: B41826 vfd circuit diagram for siemens siemens GR 40 rectifier flycal TDA16822 AN-SMPS-1683X-1 TDA1683X SFH617-3 siemens GR 90 rectifier
    Text: Version 1.2 , May 2000 Application Note AN-SMPS-1683X – 1 CoolSET TDA16831 . 34 for OFF – Line Switch Mode Power Supplies Authors: Harald Zöllinger Rainer Kling Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r


    Original     		PDF AN-SMPS-1683X TDA16831 TDA1683X Room14J1 Room1101 siemens GR 60 rectifier B41826 vfd circuit diagram for siemens siemens GR 40 rectifier flycal TDA16822 AN-SMPS-1683X-1 SFH617-3 siemens GR 90 rectifier

    transistor d 2389

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		PDF NE24283B NE24283B transistor d 2389

    NEC k 2134 transistor

    Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
    Text: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm


    OCR Scan     		PDF NE24283B NE24283B NEC k 2134 transistor nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612

    NEC 2705 L 107

    Abstract: IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The N E32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    OCR Scan     		PDF NE32484A E32484A NEC 2705 L 107 IC LA 4127 NEC Ga FET marking L NEC 2705 NEC 3552 L to Ku BAND LOW NOISE AMPLIFIER low noise FET NEC U NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET

    Transistor KU 607 VC

    Abstract: KU 607 VC BA9702FS
    Text: BA9702FS Regulator, switching, 3 channel The BA9702FS is a switching regulator that uses a pulse width modulated system for a very stable output. Dimensions Units : mm BA9702FS (SSOP-A24) It contains three sets of error amplifiers, protectors, and pulse mode modulated


    OCR Scan     		PDF BA9702FS BA9702FS SSOP-A24 SSOP-A24) RCR-110D Transistor KU 607 VC KU 607 VC

    KT 819 transistor

    Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
    Text: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e


    OCR Scan     		PDF

    hp 4503 opto

    Abstract: No abstract text available
    Text: W Hpl H EW LETT mi'tim P A C K A R D Small Outline High Speed Optocouplers Technical Data HCPL-0500 HCPL-0501 HCPL-0452 HCPL-0453 F eatures • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible w ith Infrared Vapor Phase R eflow and Wave Soldering P rocesses


    OCR Scan     		PDF HCPL-0500 HCPL-0501 HCPL-0452 HCPL-0453 HCPL-0453) E55361) hp 4503 opto

    NEC Ga FET marking L

    Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
    Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm


    OCR Scan     		PDF NE329S01 NE329S01 NE329S01-T1 NE329S01-T1B NEC Ga FET marking L lg TYP 513 309 low noise FET NEC U SAAI Marking

    mobile circuit diagram

    Abstract: melcher LM 1601
    Text: H-Fam ily A C -D C Converters < 1 0 0 W Benign Environment H-Family 70 W AC-DC Converters S in g le o u tp u t: se rie s LH1000 D o uble o u tp u t: se rie s LH2000 T rip le o u tp u t: se rie s LH3000 • Universal input voltage range suitable for most AC


    OCR Scan     		PDF LH1000 LH2000 LH3000 mobile circuit diagram melcher LM 1601