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    TRANSISTOR LRW Search Results

    TRANSISTOR LRW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR LRW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


    Original     		PDF MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553

    Untitled

    Abstract: No abstract text available
    Text: Product Description Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final stage for 802.11b/g and 801.16


    Original     		PDF SZA-2044 11b/g SZA-2044" SZA-2044Z" SZA-2044Z EDS-103612

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


    Original     		PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    Z80A

    Abstract: Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45 IDT7052 IDT7054
    Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CMOS technology, new SRAM architectures and


    Original     		PDF AN-45 IDT7052 IDT7054 12-transistor IDT7052/IDTative Z80A Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45

    Z80A

    Abstract: Z80A CPU z80a-cpu sense amplifier bitline memory device Application Note 02 datasheet and application 7217 idt7134 MICROPROCESSOR 68000 2kx8 interfacing IDT7050
    Text: INTRODUCTION TO IDT's FourPort RAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CEMOS™ technology, new RAM architectures and additional features have become feasible. The end result is that


    Original     		PDF AN-45 IDT7052 12-transistor IDT7050 Z80A Z80A CPU z80a-cpu sense amplifier bitline memory device Application Note 02 datasheet and application 7217 idt7134 MICROPROCESSOR 68000 2kx8 interfacing

    4Kx8 Dual-Port Static RAM

    Abstract: Z80A Z80A CPU z80a-cpu 128 byte dual port memory sense amplifier bitline memory device 16 bit processor schematic datasheet and application 7217 DSP CPU non-recursive filter decoder AN-45
    Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed


    Original     		PDF AN-45 IDT7052 IDT7054 12-transistor T7054 4Kx8 Dual-Port Static RAM Z80A Z80A CPU z80a-cpu 128 byte dual port memory sense amplifier bitline memory device 16 bit processor schematic datasheet and application 7217 DSP CPU non-recursive filter decoder AN-45

    Z80A

    Abstract: Z80A-CPU Z80A CPU 16 bit processor schematic 2kx8 EPROM SRAM 6116 4Kx8 Dual-Port Static RAM datasheet and application 7217 MICROPROCESSOR 68000 AN-45
    Text: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed


    Original     		PDF AN-45 IDT7052 IDT7054 12-transistor Z80A Z80A-CPU Z80A CPU 16 bit processor schematic 2kx8 EPROM SRAM 6116 4Kx8 Dual-Port Static RAM datasheet and application 7217 MICROPROCESSOR 68000 AN-45

    motorola 1N4148

    Abstract: zener diode c27 ph MC33262 C18 ph zener 1n4148 motorola ph c24 zener diode MC33262 datasheet 1N4148 pspice 47nf 630v pulse capacitor electronic ballast for 36 watt fluorescent tube l
    Text: MOTOROLA Order this document by AN1682/D SEMICONDUCTOR APPLICATION NOTE AN1682 Using the MC33157 Electronic Ballast Controller Prepared by: Michael Bairanzade System Engineering Motorola — Toulouse 1 — BASIC HALF BRIDGE ELECTRONIC BALLAST Most of the European low pressure fluorescent lamps are


    Original     		PDF AN1682/D AN1682 MC33157 motorola 1N4148 zener diode c27 ph MC33262 C18 ph zener 1n4148 motorola ph c24 zener diode MC33262 datasheet 1N4148 pspice 47nf 630v pulse capacitor electronic ballast for 36 watt fluorescent tube l

    Untitled

    Abstract: No abstract text available
    Text: For Communications Equipment MN86072 Image Processing LSI Overview The MN86072 enhances image quality by applying various imaging processing techniques to the analog signal from an image sensor. It reproduces halftone images with 64-gradation using two-dimensional MTF


    Original     		PDF MN86072 MN86072 64-gradation 64-gradation QFH128-P-1818

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI HVIGBT MODULES CM400DY-66H f spectt'c^ <S'chat'9e' . „.-YWS'S lrWflftS“ sorn HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H • Ic . • VCES .


    OCR Scan     		PDF CM400DY-66H

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TD6347S TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD6347S CONVENTIONAL TIMER The TD6347S is an automotive l2L monolithic timer. It is a long-term timer superior in voltage and temperature characteristics. It produces an NPN transistor opencollector output.


    OCR Scan     		PDF TD6347S TD6347S 250mA/30V 15-minute 56-second 98TYP 78MAX

    ITT DIODE W7

    Abstract: diode t25 4 i9
    Text: 1 D I 2 O O E - O 5 5 20Q a /< r7 - h ;7 '• O u tlin e D r a w in g s KO POWER TRANSISTOR MODULE tt.O _ . M jO . "'1 „ , ÎJ.0 ! <8, : Features • ¡SW/± -«ti - in High Voltage • y'J— 'J K r tlE • A S O M S i' •mmte -Bit m É è gQ •*23 cm


    OCR Scan     		PDF E82988 ITT DIODE W7 diode t25 4 i9

    Untitled

    Abstract: No abstract text available
    Text: micro electro nics group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA210 UHF Semicustom Linear Array Features Description • High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA210 UHF Semicustom Linear Arrays is an integrated circuit consisting of vertical NPN and PNP


    OCR Scan     		PDF ALA210 DS96-150BPF DS92-120LBC)

    TRANSISTOR ifw

    Abstract: r-102 BA3304 BA5204F Q102 Q105 Q117 R106 transistor q117 rnf38
    Text: Audio ICs 3V/35mW dual power amplifier BA5204F The BA5204F is a dual-channel power am plifier designed tor 3V stereo headphone tape players. There is alm ost no “ p o p ” sound generated when the power is switched on and off, so this 1C is ideal for headphone applications. Input


    OCR Scan     		PDF V/35mW BA5204F BA5204F TRANSISTOR ifw r-102 BA3304 Q102 Q105 Q117 R106 transistor q117 rnf38

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T EN T A T IV E TC58V16BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-M BIT 2M x 8 BITS CMOS N A N D E2PROM DESCRIPTION The TC58V16 is a single 3.3-V 16-Mbit NAND electrically erasable and programmable read-only memory (NAND E2PROM) with a spare 64K X 8 bits. The device is organized as 264 bytes X 16 pages


    OCR Scan     		PDF TC58V16BDC TC58V16 16-Mbit 264-byte FDC-22A

    UR3040PT

    Abstract: 15a42 1560c transistor lrw
    Text: MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC H A R R IS S E M I C O N D U C T O R 15A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-218AC • +175°C Rated Junction Temperature


    OCR Scan     		PDF MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC O-218AC MUR3060PT UR3040PT 15a42 1560c transistor lrw

    Untitled

    Abstract: No abstract text available
    Text: m w RURP1570, RURP1580, RURP1590, RURP15100 h a r r is . . . . e . . . u e T. , 15A, 700V - 1000V Ultrafast Diodes April 1995 Package Features JEDEC TO-220AC • Ultrafast with Soft Recovery Characteristic Or r < 100ns ANODE • +175°C Rated Junction Temperature


    OCR Scan     		PDF RURP1570, RURP1580, RURP1590, RURP15100 O-220AC 100ns)

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor MSM514402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE GENERAL DESCRIPTION The MSM514402A/AL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514402A/AL is O KI's CMOS silicon gate


    OCR Scan     		PDF MSM514402A/AL_ 576-Word MSM514402A/AL 576-word 26-pin cycles/16 MSM514402A/A

    20-PIN

    Abstract: 26-PIN ZIP20-P-400
    Text: O K I Semiconductor M SM 514400B/BL 1 ,0 4 8 , 576-Word x 4 - B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology u sed to fabricate the M SM 514400B/BL is O K I's C M O S silicon gate process technology.


    OCR Scan     		PDF MSM514400B/BL 576-Word MSM514400B/BL 1024cycles/16ms, 1024cycles/128ms b7E4E40 20-PIN 26-PIN ZIP20-P-400

    amd c-50

    Abstract: atmel h 208 TTL 74xx
    Text: ATL Features • 1.0 n Drawn Gate Length High-performance CMOS Gate Arrays • All ATL Gate Arrays are Specified from 3.0 Volts to 5.5 Volts, for Standard and Low Voltage Applications • Design Translation of Existing ASIC Designs Provide for Easy Alternate Sourcing with Equivalent or Improved Performance


    OCR Scan     		PDF MIL-STD-883 at425 amd c-50 atmel h 208 TTL 74xx

    b8118

    Abstract: MCM4517
    Text: FU JITSU M IC R O E L E C T R O N IC S . INC. MB81I8-10 MB8U8-12 AJ & g / / £ NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB8118 is a fully de­ coded dynamic NMOS random ac­ cess memory organized as 16,384 one-bit words. The design is op­


    OCR Scan     		PDF 384-BIT MB8118 16-pin b8118 MCM4517