TRANSISTOR LT 186 Search Results

TRANSISTOR LT 186 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR LT 186 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
F527S Abstract: 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553 Text: SAfiYO NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES lt>2 Newly developed SANYO very high-frequency tra n sis to rs can be used fo r various ap p licatio n s such as fo r communication equipment and measuring equipment. They are superior when used with low voltage drive.	OCR Scan	Cas-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> F527S 2sc55 marking WMM 2SC5488 2SC4853 2SC4931 2SC5277 2SC5374 2SC5489 2SC553	PDF
Untitled Abstract: No abstract text available Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •F e a tu re s IcMax. = - 5 0 0 m A 2) • E x t e r n a l d im e n s io n s (U nits: m m ) L a rg e lc. 2SA1577 2SA1036K L o w VcE(sat). O p tim a l f o r lo w - v o lt'¿±0.1	OCR Scan	2SA1036K/2SA1577/2SA854S 2SA1577 2SA1036K SC-59 SC-70 0Dlb713 O-220FN O-220FN O220FP T0-220FP,	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2223 HIGH FREQUENCY AMPLIFIER Vary small size to assure good space factor in hybrid 1C applications • »T= 600MHz Typ. lE= -1mA • Cob=1pF Typ (Vcs=6V) • NF=3dB Typ (f=100MHz) SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KSC2223 600MHz 100MHz) OT-23 00247ti0 7Tb414E DDE47bl	PDF
Untitled Abstract: No abstract text available Text: I— I P E Xe POWER OPERATIONAL AMPLIFIERS PA08 • PA08A APEX MICROTECHNOLOGY CORPORATION « TUCSON, ARIZONA « APPLICATIONS HOTLINE 8 0 0 421-18651 FEATURES • • • • • WIDE SUPPLY RANGE — ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT — Up to ± 150mA	OCR Scan	PA08A 150mA 130mA 200mA	PDF
AC 187 npn transistor TO 1 Abstract: Transistor AC 188 transistor lt 186 Transistor AC 187 2SC3906K Text: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available In SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package package marking: 2SC3906K and 2SC4102; T * . where ★ is hFE code high breakdown voltage, Vceo = 120 V complementary pair with 2SA1514K	OCR Scan	2SC3906K 2SC4102 SC-59) SC-70) 2SC4102; 2SA1514K 2SA1579 2SC3906K AC 187 npn transistor TO 1 Transistor AC 188 transistor lt 186 Transistor AC 187	PDF
transistor lt 186 Abstract: NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor Text: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 4 00 V Emitter- Base Voltage V ebo 7 V 15 A Symbol	OCR Scan	KSC2751 transistor lt 186 NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor	PDF
transistor lt 186 Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2751 HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE T O -3P ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector Current DC 'C o lle c to r Current (Pulse)	OCR Scan	KSC2751 transistor lt 186	PDF
Untitled Abstract: No abstract text available Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1330 HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FE A TU R ES • High Voltage: V c e o = —200 V • High DC C u rrent Gain: hpE = 90 to 450 • C om plem entary to 2SC3360 A B S O LU T E M A X IM U M R A T IN G S	OCR Scan	2SA1330 2SC3360	PDF
2N3303 Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175 Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any	OCR Scan	Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175	PDF
Untitled Abstract: No abstract text available Text: 8. Handling Techniques of M IN I M O L D Device It is necessary to take fu ll cares in using the M IN I M O L D device in o rde r to m aintain its high q u a lity and re li a b ility , in same manner as in the case o f o rd in a ry transistor. The fo llo w in g are environm ental c o n d itio n s encountered	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm RC4391 Inverting and Step-Down Switching Regulator Features • High performance — High switch current — 375 mA High efficiency — 70% typically • Low battery detection capability	OCR Scan	RC4391 RC4391	PDF
philips ET-E 60 Abstract: No abstract text available Text: N AMER P H I L I P S / D I S C R E T E bTE D • bb 53 T 3 1 □D3D4TD bSS H A P X Philips Semiconductors Product Specification Pow erM OS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in	OCR Scan	BUK437-600B philips ET-E 60	PDF
6DI50M-120 Abstract: P930 T151 T460 T760 b426 mtki B-426 GPR circuit schematic PC1860 Text: 6 D I5 0 M -1 2 0 5 0 a '<n — POWER TRANSISTOR MODULE W ffi-fk Features • High Arm Short Circuit Capability • High DC Current Gain • 7U— — KrtflS Including Freewheeling Diode • f l & i I n s u l a t e d Type Applications — 9 General Purpose	OCR Scan	6DI50M-1 E82986 I95t/R89) Shl50 6DI50M-120 P930 T151 T460 T760 b426 mtki B-426 GPR circuit schematic PC1860	PDF
mcp 9700E Abstract: mcp 9700E TO mcp9701e Tip 26C transistor DS01001 MCP9701-E 9700E mcp9700a 9700A MCP9700E Text: MCP9700/9700A MCP9701/9701A Low-Power Linear Active Thermistor ICs Features Description • Tiny Analog Temperature Sensor • Available Packages: SC-70-5, TO-92-3 • Wide Temperature Measurement Range: - -40°C to +125°C • Accuracy: - ±2°C max. , 0°C to +70°C (MCP9700A/9701A)	Original	MCP9700/9700A MCP9701/9701A SC-70-5, O-92-3 MCP9700A/9701A) MCP9700/9701) mcp 9700E mcp 9700E TO mcp9701e Tip 26C transistor DS01001 MCP9701-E 9700E mcp9700a 9700A MCP9700E	PDF

a2hb transistor Abstract: 1000A diode Transistor AC 188 A2HB 20/a2hb transistor Text: MITSUBISHI TRANSISTOR MODULES QM 1000H A-2HB HIGH POWER SWITCHING USE INSULATED TYPE \| QM1000HA-2HB • Ic Collector current. • V C EX Collector-emitter voltage. • hFE DC current gain. 10 00A 1000V	OCR Scan	1000H QM1000HA-2HB E8Q276 E80271 a2hb transistor 1000A diode Transistor AC 188 A2HB 20/a2hb transistor	PDF
TFK 404 Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317	OCR Scan	20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09	PDF
TA 7122 AP Abstract: MB7122E MB7122 MB7121E TP 7122 MB7121 AC 188 pnp transistor TO 1 Text: FU JITSU MB7121E/H MB7122E/H/Y MB7121L MB7122L P R O G R A M M A B LE S C H O T T K Y 4 0 9 6 -B IT R EA D ONLY M EM ORY 'D e c e m b e r 1987 E d itio n 3 .0 SCHOTTKEY 4096-RT DEAP PROM 1024 WORDS X 4 BITS The Fujitsu MB7121 and MB7122 are high speed Schottky T T L electrically	OCR Scan	MB7121E/H MB7122E/H/Y MB7121L MB7122L 4096-RT MB7121 MB7122 MB7122, TA 7122 AP MB7122E MB7121E TP 7122 AC 188 pnp transistor TO 1	PDF
ap 4466 Abstract: p 4466 Text: F SAMYO i N O .2 0 8 0 C L A A A 6 5 ^ 4 4 6 6 M o n o l i t h i c L i n e a r IC BTL-OCL 1 2 W A F P o w e r Amp f o r C a r S t e r e o Us e 'X v., Features • B a s i c a l l y p in - c o m p a t i b l e w i t h th e L A ^ ^ 6 5 N , 4 M6 1 N Ho:ÿi f v e r <§\|lSi>id ei ¿ la n g e s m u st	OCR Scan	LA44AS 100ohms ap 4466 p 4466	PDF
4461N Abstract: ic 4466 LA4465 transistor bc 132 Text: F SAMYO i N O .2 0 8 0 C L A A A 6 5 ^ 4 4 6 6 M o n o l i t h i c L i n e a r IC BTL-OCL 1 2 W A F P o w e r Amp f o r C a r S t e r e o Us e 'X v., Features • B a s i c a l l y p in - c o m p a t i b l e w i t h th e L A ^ ^ 6 5 N , 4 M6 1 N Ho:ÿi f v e r <§\|lSi>id ei ¿ la n g e s m u st	OCR Scan	2080C LAAA65^ 200uA/typ. LA446S 0i01u 100ohms 4461N ic 4466 LA4465 transistor bc 132	PDF
8U406 Abstract: BC317 Philips philips e3 407F flyback transformer philips BU406F BU407F Q030 407F Transistors Text: PHILIPS INT ERNATIONAL MSE D E3 7 3tlüö2fci OOaüôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators	OCR Scan	711005b BU406F BU407F OT186 8U406 BC317 Philips philips e3 407F flyback transformer philips BU407F Q030 407F Transistors	PDF
tfk 186 Abstract: BF115 BF 183 transistor BF 182 transistor TFK S 186 BF 186 tfk 145 transistor bf 184 BF 184 NPN transistor BF 184 transistor Text: V BF 115 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Allgem ein bis 100 MHz Applications: General up to 100 MHz Abmessungen in mm Dimensions in mm 2,54 4,8 »5,7 «0,5 -:— f - — Í t •- 13-►	OCR Scan		PDF
transistor DA3 309 Abstract: SVPWM TMS320F240 svpwm c code 3 phase inverter T-CON Schematic svpwm inverter schematic schematic diagram UPS inverter schematic diagram UPS inverter three phase 220v DC MOTOR pwm TMS320F2406 Text: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest	Original	TMS320F240 BPRA077 transistor DA3 309 SVPWM TMS320F240 svpwm c code 3 phase inverter T-CON Schematic svpwm inverter schematic schematic diagram UPS inverter schematic diagram UPS inverter three phase 220v DC MOTOR pwm TMS320F2406	PDF
schematic diagram UPS inverter three phase Abstract: 3 phase inverter schematic diagram three phase on line ups circuit diagrams schematic diagram UPS inverter phase transistor DA3 309 single phase igbt based inverter 200 amps circuit schematic diagram UPS inverter svpwm inverter schematic Marelli 3 phase UPS block diagram Text: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest	Original	TMS320F240 BPRA077 schematic diagram UPS inverter three phase 3 phase inverter schematic diagram three phase on line ups circuit diagrams schematic diagram UPS inverter phase transistor DA3 309 single phase igbt based inverter 200 amps circuit schematic diagram UPS inverter svpwm inverter schematic Marelli 3 phase UPS block diagram	PDF
transistor DA3 309 Abstract: BPRA077 svpwm inverter schematic T-CON Schematic transistor DA1 309 svpwm c code 3 phase inverter F240 IRGPC40F TLE2141 TMS320F240 Text: Three phase current measurements using a single line resistor on the TMS320F240 Literature Number: BPRA077 Texas Instruments Europe May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the	Original	TMS320F240 BPRA077 transistor DA3 309 BPRA077 svpwm inverter schematic T-CON Schematic transistor DA1 309 svpwm c code 3 phase inverter F240 IRGPC40F TLE2141 TMS320F240	PDF

TRANSISTOR LT 186 Search Results

TRANSISTOR LT 186 Result Highlights (5)

TRANSISTOR LT 186 Datasheets Context Search

F527S

Untitled

Untitled

Untitled

AC 187 npn transistor TO 1

transistor lt 186

transistor lt 186

Untitled

2N3303

Untitled

Untitled

philips ET-E 60

6DI50M-120

mcp 9700E

a2hb transistor

TFK 404

TA 7122 AP

ap 4466

4461N

8U406

tfk 186

transistor DA3 309

schematic diagram UPS inverter three phase

transistor DA3 309