TRANSISTOR M 05 Search Results

TRANSISTOR M 05 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR M 05 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
6R190E6 Abstract: IPA60R190E6 IPW60R190E6 6r190e 6r190 IPP60R190E6 JESD22 transistor ag qs id95 ID95 MARKING Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6	Original	IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6 6R190E6 IPA60R190E6 IPW60R190E6 6r190e 6r190 IPP60R190E6 JESD22 transistor ag qs id95 ID95 MARKING	PDF
Untitled Abstract: No abstract text available Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6	Original	IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6	PDF
6R190E6 Abstract: No abstract text available Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6	Original	IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6 6R190E6	PDF
6R190E6 Abstract: TO-247 FULLPAK Package IPA60R190E6 IPP60R190E6 IPW60R190E6 JESD22 6r190 6r190e Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6	Original	IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6 6R190E6 TO-247 FULLPAK Package IPA60R190E6 IPP60R190E6 IPW60R190E6 JESD22 6r190 6r190e	PDF
6R190E6 Abstract: 6R19 6r190 6r190e IPA60R190E6 IPA60R190 IPP60R190E6 IPW60R190E6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor 1 IPP60R190E6, IPA60R190E6	Original	IPx60R190E6 IPP60R190E6, IPA60R190E6 IPW60R190E6 6R190E6 6R19 6r190 6r190e IPA60R190E6 IPA60R190 IPP60R190E6 IPW60R190E6 JESD22	PDF
2SD1557 Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099 Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m	Original	2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099	PDF
smd transistor 8c Abstract: 6R160C6 SMD TRANSISTOR MARKING 2h marking code ll SMD Transistor Diode SMD SJ 8C IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 smd transistor 8c 6R160C6 SMD TRANSISTOR MARKING 2h marking code ll SMD Transistor Diode SMD SJ 8C IPA60R160C6 IPB60R160C6 IPW60R160C6 JESD22	PDF
smd transistor 8c Abstract: Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPP60R160C6 IPW60R160C6 JESD22 Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 smd transistor 8c Diode SMD SJ 8C 6R160C6 transistor SMD 2h TRANSISTOR SMD MARKING CODE m3 IPA60R160C6 IPB60R160C6 IPW60R160C6 JESD22	PDF
Untitled Abstract: No abstract text available Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6	PDF
smd transistor 8c Abstract: No abstract text available Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R160C6, IPB60R160C6	Original	IPx60R160C6 IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 smd transistor 8c	PDF
2SD1005 Abstract: EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec Text: DATA SHEET SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 10 05 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package	OCR Scan	2SD1005 2SB804 2SD1005 EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec	PDF
Untitled Abstract: No abstract text available Text: TRANSISTOR COUPLER MARKTECH IN TER NATI ON AL lfiE D • 57mS5 0000474 3 M T5800, M T5810 'T - m - s i GaAlAs INFRARED LED+ PHOTO TRANSISTOR The MT5800 and MT5810 consist of a photo transistor optically coupled to an aluminum gallium arsenide infrared emitting diode in a five lead VDE package. MTPC5800 is	OCR Scan	57mS5 T5800, T5810 MT5800 MT5810 MTPC5800 fj24A 436-S865 OGGG47Ã MT5810	PDF
n1l4m Abstract: No abstract text available Text: DATA SHEET HEG / ÉLECTRON M ïlC E SILICON TRANSISTOR / _ G N 1L4M M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors B u ilt-in TYPE in millimeters • C o m plem entary to GA1 L4M ABSOLUTE M A XIM U M RATINGS	OCR Scan		PDF
transistor rc 3866 Abstract: t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JP tM M IM M A IM M M F 1 M M l* aa M JI1M 04) • W f U M H w H M llD N I M P I M M U m M JM M M I SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors M JW 16212* The MJW16212 is a state-of-the-art SWITCHMODE™ bipolar power transistor. It	OCR Scan	MJW16212 AN1040. transistor rc 3866 t 3866 power transistor t 3866 transistor equivalent transistor transistor 3866 s t 3866 transistor 3866 transistor c 3866 transistor transistor 3866 transistor t 3866 3866 power transistor	PDF

50yjs Abstract: No abstract text available Text: Transistor Transistor Therm ische Eigenschaften RthJC Elektrische Eigenschaften Electrical properties H ö ch stzu lä ssige W erte V ces M a xim u m rated v a lu e s 1200 V 150 A RthCK lc Therm al properties 0 ,055 0,11 0 ,0 3 0,06 DC, pro B a u ste in / pe r m od u le	OCR Scan	100JUS^ 50yjs FFtfOR12QCKF3 3M035T7	PDF
TO-98 Abstract: transistor MPSA06 NPN Transistor TO92 2N3391A 2N3904 TO-92 type transistor 2n3903 2N2924 ges3 2N2926-5 2N3390 Text: - THOriSON/ DISTRIBUTOR SñE D m T05t,ñ?3 0005737 • TCSK Discrete Transistors Small-Signal Bipolar Transistors In O rder of Ascending I q NPN Signal Transistor Selector Guide NPN Signal Transistor Selector Guide (M ax.) In A v (BR)CEO (M in.)	OCR Scan	1CJ5bfl73 2N3390 2N2923 2N2924 2N2925 2N2926 2N2926-5 2N3391 2N3391A 2N3392 TO-98 transistor MPSA06 NPN Transistor TO92 2N3904 TO-92 type transistor 2n3903 ges3	PDF
24m05 Abstract: No abstract text available Text: CMBT6S17 HIGH-VOLTAGE TRANSISTOR N-P-N transistor M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm CMBT6517 = 1Z 3.0_ 2.8 0.48 038 IP “5 0.14 § 3 Pin configuration 1 = BASE 2 = EMITTER 2.6 Jl 0.70 0.50 1 1.4 1.2 2.4 3 = COLLECTOR \|<m 05 0.12 J I.0 2	OCR Scan	CMBT6S17 CMBT6517 24m05	PDF
CP1005 Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014 Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I	OCR Scan	KM90II KM90I5 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I: KM90i to-92a CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014	PDF
2SA1151 Abstract: 2SC2718 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF Text: Silicon Transistor 2 S A 1151 ' PNPx f □V \= 7 's i> 7 .9 fe m m iis m m PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use PACKAGE DIMENSIONS f t * / FEATURES O ¡¡SI r^i ^ \ Unit : mm) V ceo . 50 V ^ ^ \|V\| \| \|J ^• o 2SC2718 1=> yyui)/ > ?>	OCR Scan	2SA1151 2SC2718 2SA1151 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF	PDF
CMBT8598 Abstract: CMBT8599 Text: CDIL CMBT8598 CMBT8599 GENERAL PURPOSE TRANSISTOR P -N -P transistor M arking CMBT8598 = 2K CMBT8599 = 2W PACKAGE OUTLINE DETAILS ALL D IM ENSIO NS IN m m _3.0 2.8" 0.14 0.48 0.38 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1.02 0.8ST 0.60	OCR Scan	CMBT8598 CMBT8599 CMBT8598 CMBT8599	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M \| NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	MPS8098 625mW	PDF
D 1437 transistor Abstract: No abstract text available Text: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the	OCR Scan	2SC5004 D 1437 transistor	PDF
181945 Abstract: No abstract text available Text: A fik k Coming Attractions M aann A M P c<o m p a n y Wireless Bipolar Power Transistor, 45W 1805-1880 MHz PH1819-45 Features • • • • • NPN Silicon Microwave Power Transistor Com m on Emitter Class AB O peration Internal Input and O utput Im pedance Matching	OCR Scan	PH1819-45 181945	PDF
K1G NPN Abstract: vqe 23 MMBTA05 MMBTA06 MMBTA55 MMBTA56 Text: TRANSYS M M BTA05 / M M BTA06 FIFPTRflNIPÇ - . . « . - I - NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LIMITED Features_ Epitaxial Planar Die Construction Complementary PNP Types Available	OCR Scan	MMBTA05 MMBTA06 MMBTA55 MMBTA56) OT-23, MIL-STD-202, MMBTA06 OT-23 K1G NPN vqe 23 MMBTA56	PDF

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TRANSISTOR M 05 Search Results

TRANSISTOR M 05 Result Highlights (5)

TRANSISTOR M 05 Datasheets Context Search

6R190E6

Untitled

6R190E6

6R190E6

6R190E6

2SD1557

smd transistor 8c

smd transistor 8c

Untitled

smd transistor 8c

2SD1005

Untitled

n1l4m

transistor rc 3866

50yjs

TO-98

24m05

CP1005

2SA1151

CMBT8598

Untitled

D 1437 transistor

181945

K1G NPN