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    TRANSISTOR MARK CODE H1 Search Results

    TRANSISTOR MARK CODE H1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARK CODE H1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    water level inductive sensor

    Abstract: obstacle sensors
    Text: 869 FIBER SENSORS Digital Mark Sensor Amplifier Built-in LX-100 SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ ■■Sensor selection guide.P.831~ ■■General precautions. P.1405


    Original     		PDF LX-100 LX-101â LX-101-P LX-100 FZ-10 water level inductive sensor obstacle sensors

    optocoupler bi-directional 4 pin

    Abstract: ADB62 OPTOCOUPLER MARKING CODE H11ADB H11ADB6 fairchild optocoupler H11ADB62
    Text: 8-PIN BI-DIRECTIONAL TRANSISTOR OPTOCOUPLER H11ADB6 H11ADB61 H11ADB62 DESCRIPTION The H11ADB series optocouplers have two channels for high density applications. The inverse parallel channel orientation is ideal for applications which require data to be both transmitted and received on each side of the isolation boundary. Each


    Original     		PDF H11ADB6 H11ADB61 H11ADB62 H11ADB E90700 optocoupler bi-directional 4 pin ADB62 OPTOCOUPLER MARKING CODE H11ADB6 fairchild optocoupler H11ADB62

    Untitled

    Abstract: No abstract text available
    Text: 833 FIBER SENSORS Wafer Mapping Sensor M-DW1 Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~ LASER SENSORS PHOTOELECTRIC SENSORS


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 853 FIBER SENSORS Leak Detection Sensor Amplifier Built-in EX-F70 SERIES EX-F60 SERIES Related Information •■General terms and conditions. F-17 ■■General precautions. P.1405 ■■Sensor selection guide. P.831~


    Original     		PDF EX-F70 EX-F60 panasonic-electric-wo661 EX-F70/ EX-F60

    y1 marking code transistor

    Abstract: HSB1386I transistor mark code H1
    Text: HI-SINCERITY Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386I LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.


    Original     		PDF HI200201 HSB1386I O-251 183oC 217oC 260oC y1 marking code transistor HSB1386I transistor mark code H1

    h11cx

    Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
    Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled


    Original     		PDF H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 E90700 H11C1 00V/400V h11cx GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins

    HLB121I

    Abstract: marking code k1 MARK Y1 Transistor transistor mark code H1
    Text: HI-SINCERITY Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2004.09.24 Page No. : 1/4 MICROELECTRONICS CORP. HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching


    Original     		PDF HE9027 HLB121I HLB121I O-251 183oC 217oC 260oC marking code k1 MARK Y1 Transistor transistor mark code H1

    transistor mark code H1

    Abstract: y1 marking code transistor HLB121I hlb121 HE9027
    Text: HI-SINCERITY Spec. No. : HE9027 Issued Date : 1996.11.06 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching


    Original     		PDF HE9027 HLB121I HLB121I O-251 183oC 217oC 260oC transistor mark code H1 y1 marking code transistor hlb121 HE9027

    PT 1017

    Abstract: transistor mark code H1 TL 434 transistor k 2837 HLB122I y1 marking code transistor Y2 MARKING MARK Y1 Transistor
    Text: HI-SINCERITY Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching


    Original     		PDF HE9030 HLB122I HLB122I O-251 183oC 217oC 260oC PT 1017 transistor mark code H1 TL 434 transistor k 2837 y1 marking code transistor Y2 MARKING MARK Y1 Transistor

    MARKING W3 SOT23 TRANSISTOR

    Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
    Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*


    Original     		PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps

    sot-235 g2

    Abstract: mosfet mark code G4 marking h2 sot-23-5 marking H2 5pin marking H2 5-pin 5pin mosfet mark G4 sot-23-5 marking G2
    Text: TC1188 TC1189 MAX8863/64 Pin-Compatible, Low-Dropout, 120mA Linear Regulators FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ Delivering up to 120mA, the TC1188 and TC1189 are fixed output, low-dropout linear regulators that operate from a +2.5V to +6.0V input range. The 50µA supply current


    Original     		PDF TC1188 TC1189 MAX8863/64 120mA MAX8863/8864 120mA, out122 TC1188/1189-2 sot-235 g2 mosfet mark code G4 marking h2 sot-23-5 marking H2 5pin marking H2 5-pin 5pin mosfet mark G4 sot-23-5 marking G2

    sot-235 g2

    Abstract: marking h2 sot-23-5 MARKING G3 Transistor sot-23-5 marking G2
    Text: TC1188 TC1189 MAX8863/64 PIN-COMPATIBLE LOW-DROPOUT, 100 mA LINEAR REGULATORS FEATURES GENERAL DESCRIPTION • ■ ■ ■ Delivering up to 100 mA, the TC1188 and TC1189 are fixed output, low-dropout linear regulators that operate from a +2.5V to +6.5V input range. The 50 µA supply current


    Original     		PDF TC1188 TC1189 MAX8863/64 MAX8863/8864 TC1188/1189 OT-23A-5 SC-74A) TC1188/1189-1 sot-235 g2 marking h2 sot-23-5 MARKING G3 Transistor sot-23-5 marking G2

    Untitled

    Abstract: No abstract text available
    Text: 425 FIBER SENSORS Slim Body Automatic Sensitivity Setting Photoelectric Sensor SU-7 SERIES SH SERIES Related Information •■General terms and conditions. F-17 ■■Glossary of terms. P.1359~ Amplifier-separated ■■Sensor selection guide. P.283~


    Original     		PDF SH-82Râ SH-82Gâ SH-84R SUS304)

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		PDF MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E

    marking code k1

    Abstract: marking A1 TRANSISTOR HI127
    Text: HI-SINCERITY Spec. No. : HE9017 Issued Date : 1996.04.12 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-251 • High DC current gain • Bult-in a damper diode at E-C Darlington Schematic


    Original     		PDF HE9017 HI127 O-251 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR HI127

    marking code k1

    Abstract: marking A1 TRANSISTOR marking y1 HI122
    Text: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2005.07.13 Page No. : 1/3 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.


    Original     		PDF HI200102 HI122 O-251 HI122 183oC 217oC 260oC marking code k1 marking A1 TRANSISTOR marking y1

    MOSFET MARK y2

    Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC 10sec MOSFET MARK y2 MOSFET MARK H1 marking code k1 marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI

    MOSFET MARK y2

    Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to


    Original     		PDF MOS200501 H01N60S 200oC 183oC 217oC 260oC 245oC H01N60SI, H01N60SJ MOSFET MARK y2 H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1

    BT816

    Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
    Text: DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: •o OUT I N o -MA/V • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages


    OCR Scan     		PDF -335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718

    transistor b722

    Abstract: b863 tc 144e Transistor b861 B861 equivalent transistor TT 3034 A771 TRANSISTOR B861 transistor DTC103 transistor TT 3034
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF

    B861 transistor

    Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
    Text: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded


    OCR Scan     		PDF J/U13 B861 transistor equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR