Untitled
Abstract: No abstract text available
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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MMBT3904K
MMBT3904K
OT-23
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transistor 1AK
Abstract: 1AK marking transistor MMBT3904K 1ak transistor
Text: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units
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MMBT3904K
MMBT3904K
OT-23
transistor 1AK
1AK marking transistor
1ak transistor
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1AM marking transistor
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE
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OT-23
MMBT3904
OT-23
MMBT3906
100mA
100MHz
1AM marking transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR NPN SOT-23 FEATURES z As complementary type the PNP transistor MMBT3906 is recommended z Epitaxial planar die construction MARKING: 1AM 1. BASE
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OT-23
MMBT3904
MMBT3906
100mA
100MHz
10mAdc
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1AM MMBT3904
Abstract: transistors 1am transistor 1am
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction SOT-23 (3)C MARKING: 1AM 1AM Ｃｏｄｅ
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OT-23
MMBT3904
MMBT3906
OT-23
1AM MMBT3904
transistors 1am
transistor 1am
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sot23 marking 1AM
Abstract: MARKING 1AM 1AM marking transistor transistor 1am MMBT3904 SOT-23 1AM SOT23 1AM transistor transistor marking 1am 1AM sot-23 sot23 1am
Text: MMBT3904 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MMBT3904
OT-23
OT-23
MMBT3906
100mA
100MHz
10mAdc
sot23 marking 1AM
MARKING 1AM
1AM marking transistor
transistor 1am
MMBT3904 SOT-23
1AM SOT23
1AM transistor
transistor marking 1am
1AM sot-23
sot23 1am
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STC405
Abstract: IC DATE CODE
Text: STC405 NPN Silicon Transistor Features PIN Connection • Low saturation switching application • Voltage regulator application • High Voltage : VCEO=60V Min. 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC405 STC405 TO-220F-3L Marking Diagram
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STC405
O-220F-3L
SDB20D45
KSD-T0O064-001
STC405
IC DATE CODE
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Untitled
Abstract: No abstract text available
Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
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KST3904
OT-23
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Untitled
Abstract: No abstract text available
Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage
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KST3904
OT-23
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transistor marking 1am
Abstract: transistor 1am MMBT3904 MMBT3906 MMBT3904 jiangsu 1AM F
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3904 SOT–23 TRANSISTOR NPN FEATURES z Complementary Type The PNP Transistor MMBT3906 is Recommended z Epitaxial Planar Die Construction MARKING: 1AM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBT3904
MMBT3906
-55ENT
transistor marking 1am
transistor 1am
MMBT3904
MMBT3904 jiangsu
1AM F
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transistor 1AK
Abstract: MMBT3904K 1ak transistor 1AK marking transistor
Text: MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage
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MMBT3904K
OT-23
MMBT3904K
transistor 1AK
1ak transistor
1AK marking transistor
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BULB128D-BT4
Abstract: transistor bs 140
Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BULB128D-BT4
BULB128DB
O-263)
BULB128D-BT4
transistor bs 140
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2n5109
Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER
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2N5109
CP214
2N5109
transistor 2N5109
2n5109 transistor
transistor marking code AL
VCE-15V
NPN transistor marking NY
chip die npn transistor
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BULB128D
Abstract: BULB128D-1
Text: BULB128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-1 BULB128D Tube STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BULB128D-1
BULB128D
O-262)
BULB128D
BULB128D-1
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS SYMBOL
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MMBT1616/A
MMBT1616
OT-23
MMBT1616A
QW-R206-036
100mA
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d82 sot23
Abstract: B772SS D882SS
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
QW-R206-018
d82 sot23
B772SS
D882SS
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d82 sot23
Abstract: D882* transistor
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
D882SSL
10sing
QW-R206-018
d82 sot23
D882* transistor
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d82 sot-23
Abstract: datasheet d882 B772SS D882SS d82 sot23
Text: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23
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D882SS
B772SS
OT-23
QW-R206-018
d82 sot-23
datasheet d882
B772SS
D882SS
d82 sot23
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Untitled
Abstract: No abstract text available
Text: BCX20 NPN Epitaxial Silicon Transistor BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications 3 2 1 SOT-23 Marking: U2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units
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BCX20
BCX20
OT-23
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TRANSISTOR 1616
Abstract: No abstract text available
Text: UTC MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION *Audio frequency power amplifier *Medium speed switching 2 1 MARKING 3 16 MMBT1616 SOT-23 16A MMBT1616A 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS PARAMETER
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MMBT1616/A
MMBT1616
OT-23
MMBT1616A
width10ms,
QW-R206-036
TRANSISTOR 1616
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BULB128D-BT4
Abstract: No abstract text available
Text: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS
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BULB128D-BT4
BULB128DB
O-263)
BULB128D-BT4
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2A MARKING SOT23
Abstract: No abstract text available
Text: MMBT589 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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MMBT589
OT-23
OT-23
-100A
-10mA
-500mA
-500mA,
-50mA
-100mA
2A MARKING SOT23
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smd transistor npn 491
Abstract: CMMT491 MARKING SMD npn TRANSISTOR s 1a 12 smd code marking 2A sot23 2A transistor smd SOT-23 smd transistor 491 TRANSISTOR SMD MARKING CODE WT TRANSISTOR SMD MARKING CODE 1a TRANSISTOR SMD 1a 9 smd transistor MARKING 2A sot23
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMMT491 PIN CONFIGURATION NPN SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 Marking Code is =491 Medium Power Transistor
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ISO/TS16949
CMMT491
OT-23
C-120
CMMT491Rev180602E
smd transistor npn 491
CMMT491
MARKING SMD npn TRANSISTOR s 1a 12
smd code marking 2A sot23
2A transistor smd SOT-23
smd transistor 491
TRANSISTOR SMD MARKING CODE WT
TRANSISTOR SMD MARKING CODE 1a
TRANSISTOR SMD 1a 9
smd transistor MARKING 2A sot23
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A ISSUE 3 - OCTOBER 1995_ FEATURES Low equivalent on resistance RCE Mrtl = 350mi2 a t 1A PART MARKING DETAIL - 91A COMPLEMENTARY TYPE- FMMT491A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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FMMT591A
350mi2
FMMT491A
-100m
-50mA,
100MHz
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