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    TRANSISTOR MARKING 1DE Search Results

    TRANSISTOR MARKING 1DE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING 1DE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CMPT4209 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT4209 is a PNP Silicon Transistor designed for high speed switching applications. MARKING CODE: 4209 SOT-23 CASE MAXIMUM RATINGS: TA=25°C


    Original     		CMPT4209 CMPT4209 OT-23 100MHz PDF

    PN420

    Abstract: Pn4209
    Text: PN4209 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN4209 is a PNP Silicon Transistor designed for high speed switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage


    Original     		PN4209 VB100A 100MHz PN420 PDF

    smd marking 58a

    Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
    Text: SPI80N10L SPP80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS Package Ordering Code Marking SPP80N10L PG-TO220-3-1 Q67042-S4173 80N10L


    Original     		SPI80N10L SPP80N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4173 80N10L smd marking 58a 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A PDF

    47N10

    Abstract: SPB47N10 SPI47N10 SPP47N10 V550-12 Q67060-S7431
    Text: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS P-TO262-3-1 Package Ordering Code Marking SPP47N10 P-TO220-3-1


    Original     		SPI47N10 SPP47N10 SPB47N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP47N10 Q67040-S4183 47N10 47N10 SPB47N10 SPI47N10 V550-12 Q67060-S7431 PDF

    2n603l

    Abstract: marking code H.5 Sot 23-5 BSP603S2L VPS05163 marking 18W diode
    Text: BSP603S2L Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 33 mΩ ID 5.2 A • Enhancement mode • Logic Level SOT-223 4 3 2 1 Type Package Ordering Code Marking BSP603S2L SOT-223 Q67060-S7213 2N603L VPS05163


    Original     		BSP603S2L OT-223 Q67060-S7213 VPS05163 2N603L 2n603l marking code H.5 Sot 23-5 BSP603S2L VPS05163 marking 18W diode PDF

    11n10

    Abstract: P-TO252 SPD11N10 SPU11N10
    Text: SPD11N10 SPU11N10 Preliminary data SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 RDS on 170 m ID 10.5 A P-TO251 Type Package Ordering Code Marking


    Original     		SPD11N10 SPU11N10 P-TO251 P-TO252 Q67042-S4121 11N10 11n10 P-TO252 SPD11N10 SPU11N10 PDF

    BSP123

    Abstract: E6327 Q67000-S306
    Text: Rev. 1.0 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A SOT223 Type Package Ordering Code Tape and Reel Information Marking BSP123 SOT223


    Original     		BSP123 OT223 Q67000-S306 E6327: BSP123 E6327 Q67000-S306 PDF

    2N615L

    Abstract: BSP615S2L VPS05163 55B5
    Text: BSP615S2L Preliminary data OptiMOS =Small-Signal-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 90 mΩ ID 2.8 A • Enhancement mode • Logic Level SOT-223 4 3 2 1 Type Package Ordering Code Marking BSP615S2L SOT-223 Q67060-S7211 2N615L


    Original     		BSP615S2L OT-223 Q67060-S7211 VPS05163 2N615L 2N615L BSP615S2L VPS05163 55B5 PDF

    10N10L

    Abstract: Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L
    Text: SPI10N10L SPP10N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 RDS on 154 m ID 10.3 A PG-TO262-3-1 Type Package Ordering Code Marking


    Original     		SPI10N10L SPP10N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4163 10N10L 10N10L Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L PDF

    Untitled

    Abstract: No abstract text available
    Text: SPP15P10P G SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated PG-TO220-3 Drain pin 2 Type Package SPP15P10P PG-TO220-3 Gate pin1 Marking Source


    Original     		SPP15P10P PG-TO220-3 SPP15P10P 15P10P -200A/ PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 RDS on 90 m ID 2.8 A V SOT 223 • Green Product (RoHS Compliant) • AEC Qualified Type Package Ordering Code Marking BSP615S2L SOT 223 On Request


    Original     		BSP615S2L 2N615L PDF

    1614G

    Abstract: No abstract text available
    Text: SPP15P10P G SIPMOS Power-Transistor Product Summary Feature • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated PG-TO220-3 Drain pin 2 Type Package SPP15P10P PG-TO220-3 Gate pin1 Lead free Marking


    Original     		SPP15P10P PG-TO220-3 SPP15P10P 15P10P -200A/ 1614G PDF

    Q62702-S654

    Abstract: BSP125 E6327 IS-012A
    Text: Rev. 1.0 SIPMOS Power-Transistor BSP125 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 600 V 45 Ω 0.12 A SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP125 SOT-223 Q62702-S654


    Original     		BSP125 OT-223 Q62702-S654 E6327: Q62702-S654 BSP125 E6327 IS-012A PDF

    BSP324

    Abstract: E6327 Q67000-S215
    Text: Rev. 1.0 SIPMOS  Power-Transistor BSP324 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 400 V 25 Ω 0.17 A SOT-223 Type Package Ordering Code Tape and Reel Information Marking BSP324 SOT-223 Q67000-S215


    Original     		BSP324 OT-223 Q67000-S215 E6327: BSP324 E6327 Q67000-S215 PDF

    smd marking 58a

    Abstract: SPB80N10L SPP80N10L 80N10L SPI80N10
    Text: SPB80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 V RDS on 14 m ID 80 A P-TO263-3-2 Type Package Ordering Code Marking SPB80N10L


    Original     		SPB80N10L P-TO263-3-2 Q67042-S4171 80N10L BSPP80N10L, BSPB80N10L BSPI80N10L, SPP80N10L, smd marking 58a SPB80N10L SPP80N10L 80N10L SPI80N10 PDF

    BSP88

    Abstract: E6327 Q67000-S070 VPS05163 smd marking 271 Sot
    Text: BSP88 Rev. 1.0 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level · dv/dt rated 240 V 6 W 0.35 A SOT-223 4 3 2 1 VPS05163 Type Package Ordering Code Tape and Reel Information Marking BSP88


    Original     		BSP88 OT-223 VPS05163 Q67000-S070 E6327: BSP88 E6327 Q67000-S070 VPS05163 smd marking 271 Sot PDF

    2N603L

    Abstract: Q67060-S7213 BSP603S2L
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 33 mΩ ID 5.2 A SOT 223 Type BSP603S2L Package SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L PDF

    BSP296

    Abstract: E6327 Q67000-S067 VPS05163
    Text: BSP296 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 100 V • Enhancement mode RDS on 0.7 Ω • Logic Level ID 1.1 A • dv/dt rated SOT-223 4 3 2 1 VPS05163 Type Package Ordering Code Tape and Reel Information Marking


    Original     		BSP296 OT-223 VPS05163 Q67000-S067 E6327 BSP296 E6327 Q67000-S067 VPS05163 PDF

    2N0640

    Abstract: BSPD25N06S2-40 SPD25N06S2-40 VGS-75
    Text: SPD25N06S2-40 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 25 A P-TO252-3-1 Type Package Ordering Code Marking SPD25N06S2-40


    Original     		SPD25N06S2-40 P-TO252-3-1 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 BSPD25N06S2-40 VGS-75 PDF

    2N615L

    Abstract: Q67060-S7211 BSP615S2L
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 90 mΩ ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		BSP615S2L Q67060-S7211 2N615L 2003-10-2y 2N615L Q67060-S7211 BSP615S2L PDF

    15P10P

    Abstract: SPP15P10P smd diode 106a
    Text: SPP15P10P G SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS -100 V • Enhancement mode RDS on 0.24 Ω • Avalanche rated ID -15 A • dv/dt rated PG-TO220-3-1 Drain pin 2 Type Package SPP15P10P PG-TO220-3-1 Gate pin1 Marking


    Original     		SPP15P10P PG-TO220-3-1 SPP15P10P 15P10P 15P10P smd diode 106a PDF

    Q67042-S4164

    Abstract: TRANSISTOR SMD MARKING CODE 42 10N10L SPB10N10L SPP10N10L SMD 81A
    Text: SPB10N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 V RDS on 154 m ID 10.3 A P-TO263-3-2 Type Package Ordering Code Marking SPB10N10L


    Original     		SPB10N10L P-TO263-3-2 Q67042-S4164 10N10L Q67042-S4164 TRANSISTOR SMD MARKING CODE 42 10N10L SPB10N10L SPP10N10L SMD 81A PDF

    2N615L

    Abstract: 55B5 BSP615S2L 2N615
    Text: BSP615S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V RDS on 90 m ID 2.8 A SOT 223 Type Package Ordering Code Marking BSP615S2L SOT 223 Q67060-S7211 2N615L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		BSP615S2L Q67060-S7211 2N615L 2N615L 55B5 BSP615S2L 2N615 PDF

    2N603L

    Abstract: Q67060-S7213 BSP603S2L d52a
    Text: BSP603S2L OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level Type BSP603S2L Package SOT 223 VDS 55 V R DS on 33 m ID 5.2 A SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified


    Original     		BSP603S2L Q67060-S7213 2N603L 2N603L Q67060-S7213 BSP603S2L d52a PDF