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    TRANSISTOR MARKING 1J Search Results

    TRANSISTOR MARKING 1J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    TRANSISTOR MARKING 1J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon COLLECTOR 3 * “G” Lead Pb -Free *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V 3 MARKING DIAGRAM 3 XX = Device Code (See


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C OT-23 BC847, BC848, BC846 BC850

    Untitled

    Abstract: No abstract text available
    Text: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C OT-23 BC847, BC848, BC846 BC850

    BC10 npn transistor

    Abstract: BC849C-2C BC850B/C C8050 transistor bc 556 BC847A BC848C BC850B BC848A bc848 NPN transistor
    Text: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C OT-23 BC847, BC848, BC846 BC850 BC10 npn transistor BC849C-2C BC850B/C C8050 transistor bc 556 BC847A BC848C BC850B BC848A bc848 NPN transistor

    C8050

    Abstract: No abstract text available
    Text: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C General Purpose Transistor NPN Silicon *Moisture Sensitivity Level: 1 *ESD Rating - Human Body Model:>4000V -Machine Model:>400V COLLECTOR 3 3 MARKING DIAGRAM 3 XX = Device Code See Table Below 1 1 BASE 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C OT-23 BC847, BC848, BC846 BC850 C8050

    VPS05178

    Abstract: BCV61
    Text: BCV 61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking


    Original     		PDF VPS05178 EHA00012 OT-143 EHN00002 Sep-30-1999 EHP00940 EHP00942 VPS05178 BCV61

    marking 1ks

    Abstract: BCV61
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		PDF BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 marking 1ks BCV61

    BCV61

    Abstract: No abstract text available
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		PDF BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 BCV61

    BCV61

    Abstract: BCV61A BCV61B BCV61C VPS05178
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		PDF BCV61 VPS05178 EHA00012 BCV61A OT143 BCV61B BCV61C EHN00002 BCV61 BCV61A BCV61B BCV61C VPS05178

    Untitled

    Abstract: No abstract text available
    Text: I CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.89* 2.00 0.60 0.40 0.90


    OCR Scan     		PDF CMBT2369 100MHz;

    1B marking transistor

    Abstract: 33T4 CMBT2369
    Text: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60


    OCR Scan     		PDF CMBT2369 100MHz; 1B marking transistor 33T4 CMBT2369

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP Type Marking Ordering Code Pin Configuration SMBTA 42 s1 D Q68000-A6482 1=B 2=E Package


    OCR Scan     		PDF Q68000-A6482 OT-23 Jan-22-1999

    TRANSISTOR S2d

    Abstract: No abstract text available
    Text: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23


    OCR Scan     		PDF Q68000-A6479 OT-23 Jan-22-1999 100MHz TRANSISTOR S2d

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 170 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated ' ^GS th = -2.1.-4.0 V Type ^DS BSP 170 -60 V Type BSP 170 Ordering Code Q67000-S . . . -1.7 A ffDS(on) Package 0.35 Q, SOT-223 Marking Tape and Reel Information


    OCR Scan     		PDF Q67000-S OT-223 E6327

    d 998 transistor circuit

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998


    OCR Scan     		PDF Q62702-F1129 T-143 M27ol BB5151 J8B515 d 998 transistor circuit

    d 317 transistor

    Abstract: ti 317
    Text: SIEMENS BSP 317 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type h -0.37 A BSP 317 ^DS -200 V Type BSP 317 Ordering Code Q67000-S94 Package flDS(on) 6 fì Marking SOT-223 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S94 E6327 OT-223 GPS05560 d 317 transistor ti 317

    smd code LGG

    Abstract: No abstract text available
    Text: BSP 88 Infineon technologies SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^GS th = 0.6. 1.2V Type BSP 8 8 Type BSP 8 8 ^bs h> 240 V 0.32 A Ordering Code Q67000-S070 ^DS(on) 8 Q Package Marking SOT-223 BSP 88 Tape and Reel Information


    OCR Scan     		PDF Q67000-S070 OT-223 E6327 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd code LGG

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks


    OCR Scan     		PDF BCV61 BCV61 Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 fi235b05 fl235b05

    Siemens DIODE E 1240

    Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
    Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability


    OCR Scan     		PDF BFP420 25-Line Transistor25 Q62702-F1591 OT343 Siemens DIODE E 1240 AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor

    transistor 1kp

    Abstract: transistor 406 specification marking code 1kp 1Lp marking BCV61 TRANSISTOR 404 LC marking code transistor
    Text: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector TR2; base TR1 and TR2 • Matched pairs. 2 collector TR1 APPLICATIONS


    OCR Scan     		PDF BCV61 OT143B BCV62. BCV61 BCV61A BCV61B BCV61C transistor 1kp transistor 406 specification marking code 1kp 1Lp marking TRANSISTOR 404 LC marking code transistor

    BFY88

    Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
    Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration


    OCR Scan     		PDF i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288

    CF-400

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC aie T> a ^ O O S b GDDS3b7^ 3 • AL66 CF 400 m i » ! » electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 G Hz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BCV61 PINNING • Low curren t max. 100 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 co lle cto r TR2; base TR1 and TR2 • M atched pairs. 2 co lle cto r TR1


    OCR Scan     		PDF BCV61 BCV62. OT143B

    BU 508 transistor

    Abstract: transistor bu Bu608A bu508 transistor BU 608 bu 508 sot-23 2603 transistor bc 488 BU608
    Text: TELEFUNKEN ELECTRONIC 1?E D • fl^EOO^b DOQTMbS BU 508 •*BU 508 A ■¡rHUHFMMKIM electronic Cf«aliy«Technologies T -32-/3 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in color TV receive« Features: • In triple diffusiion technique


    OCR Scan     		PDF DIN41859 15A3DIN BU 508 transistor transistor bu Bu608A bu508 transistor BU 608 bu 508 sot-23 2603 transistor bc 488 BU608

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN switching transistor PMST2369 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 15 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching applications, primarily in portable


    OCR Scan     		PDF PMST2369 OT323 OT323) OT323