2n3057
Abstract: No abstract text available
Text: 2N3057A Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3057A NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3057A
MIL-PRF-19500/391
2N3057A
2N3057
MIL-PRF-19500/391.
T4-LDS-0185-1,
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2n3019 equivalent
Abstract: 2n3019 transistor test 2N3700 "nickel cap"
Text: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019
MIL-PRF-19500/391
2N3019
MIL-PRF-19500/391.
T4-LDS-0185,
2n3019 equivalent
2n3019 transistor
test 2N3700
"nickel cap"
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Untitled
Abstract: No abstract text available
Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019S
MIL-PRF-19500/391
2N3019S
O-205AD)
2N3019
MIL-PRF-19500/391.
T4-LDS-0185-4,
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6822
Abstract: 2N3019S "nickel cap"
Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and
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2N3019S
MIL-PRF-19500/391
2N3019S
2N3019
MIL-PRF-19500/391.
T4-LDS-0185-4,
6822
"nickel cap"
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test 2N3700
Abstract: 2n3019 equivalent
Text: 2N3700 Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is military qualified for high-reliability applications.
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2N3700
MIL-PRF-19500/391
2N3700
MIL-PRF-19500/391.
O-206AA)
T4-LDS-0185-2,
test 2N3700
2n3019 equivalent
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2N3700 Equivalent transistor
Abstract: 2n3019 transistor 23/1N647-1 JANTXV
Text: 2N3700 Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is military qualified for high-reliability applications.
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2N3700
MIL-PRF-19500/391
2N3700
MIL-PRF-19500/391.
2N3700.
O-206AA)
T4-LDS-0185-2,
2N3700 Equivalent transistor
2n3019 transistor
23/1N647-1 JANTXV
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JANSL 2N3019S
Abstract: JANS2N3700UB 2n3019 equivalent
Text: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for
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2N3019
2N3019S
MIL-PRF-19500/391
2N3019S
2N3019.
O-205AD)
T4-LDS-0098,
JANSL 2N3019S
JANS2N3700UB
2n3019 equivalent
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2N3057A
Abstract: No abstract text available
Text: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also
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2N3057A
MIL-PRF-19500/391
2N3057A
2N3057.
O-206AB)
T4-LDS-0262,
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2n3019 equivalent
Abstract: 2N3019
Text: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for
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2N3019
2N3019S
MIL-PRF-19500/391
2N3019S
2N3019.
O-205AD)
T4-LDS-0098,
2n3019 equivalent
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Untitled
Abstract: No abstract text available
Text: JANS_2N3057A RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR DESCRIPTION This RHA level 2N3057A NPN Silicon Transistor device is military qualified up to a JANSR level for high-reliability applications requiring a radiation hardened device. Microsemi also
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2N3057A
MIL-PRF-19500/391
2N3057A
2N3057.
O-206AB)
T4-LDS-0262,
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2N3700 DIE
Abstract: JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB JANHC2N3700
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 October 2002. INCH-POUND MIL-PRF-19500/391G 15 July 2002 SUPERSEDING MIL-PRF-19500/391F 26 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
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MIL-PRF-19500/391G
MIL-PRF-19500/391F
2N3019,
2N3019S,
2N3057A,
2N3700,
2N3700UB
JANHC2N3700
JANKC2N3700
MIL-PRF-19500.
2N3700 DIE
JANKC2N3700
JANHCA2N3700
2N3019 DIE
2N3019
2N3019S
2N3057A
2N3700
2N3700UB
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2N3700UB
Abstract: 2N3700
Text: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability
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2N3700UB
MIL-PRF-19500/391
2N3700UB
2N3700
MIL-PRF-19500/391.
O-206AA)
T4-LDS-0185-3,
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TRANSISTOR SMD MARKING CODE w2
Abstract: 6 pin TRANSISTOR SMD CODE XI smd transistor marking C14 smd transistor marking l6 smd transistor marking code w2 w SMD MARKING CODE C16 smd transistor marking l7 TRANSISTOR SMD MARKING CODE XI smd transistor marking C14 8 MLD940
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-30 UHF power LDMOS transistor Product specification Supersedes data of 2002 Dec 19 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-30 FEATURES PINNING - SOT608A • Typical W-CDMA performance at a supply voltage of
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M3D750
BLF2022-30
BLF2022-30
OT608A
15-Aug-02)
TRANSISTOR SMD MARKING CODE w2
6 pin TRANSISTOR SMD CODE XI
smd transistor marking C14
smd transistor marking l6
smd transistor marking code w2 w
SMD MARKING CODE C16
smd transistor marking l7
TRANSISTOR SMD MARKING CODE XI
smd transistor marking C14 8
MLD940
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Untitled
Abstract: No abstract text available
Text: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability
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2N3700UB
MIL-PRF-19500/391
2N3700UB
2N3700
MIL-PRF-19500/391.
2N3700UB.
T4-LDS-0185-3,
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Untitled
Abstract: No abstract text available
Text: HMC391LP4 / 391LP4E v03.0209 MMIC VCO w/ BUFFER AMPLIFIER, 3.9 - 4.45 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Ampliier for: Pout: +5.0 dBm • VSAT & Microwave Radio Phase Noise: -106 dBc/Hz @100 KHz • Radio Altimetry No External Resonator Needed
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HMC391LP4
391LP4E
HMC391LP4
HMC391LP4E
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HMC391LP4
Abstract: No abstract text available
Text: HMC391LP4 / 391LP4E v02.0505 Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5.0 dBm • VSAT & Microwave Radio Phase Noise: -106 dBc/Hz @100 KHz • Radio Altimetry No External Resonator Needed • Test Equipment & Industrial Controls
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HMC391LP4
391LP4E
HMC391LP4
HMC391LP4E
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Untitled
Abstract: No abstract text available
Text: HMC391LP4 / 391LP4E v02.0505 MMIC VCO w/ BUFFER AMPLIFIER, 3.9 - 4.45 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5.0 dBm • VSAT & Microwave Radio Phase Noise: -106 dBc/Hz @100 KHz • Radio Altimetry No External Resonator Needed
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HMC391LP4
391LP4E
HMC391LP4
HMC391LP4E
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Untitled
Abstract: No abstract text available
Text: HMC391LP4 / 391LP4E v02.0505 MMIC VCO w/ BUFFER AMPLIFIER, 3.9 - 4.45 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +5.0 dBm • VSAT & Microwave Radio Phase Noise: -106 dBc/Hz @100 KHz • Radio Altimetry No External Resonator Needed
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HMC391LP4
391LP4E
HMC391LP4
HMC391LP4E
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marking AE 5pin
Abstract: AE MARKING 5PIN dual transistors UMT5
Text: 11 UMS N FM S A Transistor, dual, PNP Features Dimensions Units : mm • • • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages package marking: UMS1N and FMS1A; S1 package contains two transistors, 2SA1037AK, with common emitters Applications •
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SC-74A)
2SA1037AK,
marking AE 5pin
AE MARKING 5PIN
dual transistors UMT5
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon RF Transistor BF 763 • For low-noise amplifiers and oscillators up to 1 GHz Type Marking Ordering Code BF 763 - Q62702-F766 Pin Co nfigurai ion 1 2 3 B E Package1 TO-92 C Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage
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Q62702-F766
l235bGS
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Untitled
Abstract: No abstract text available
Text: BSS 100 In fin e o n taehnologifts SIPMOS Small-Slgnal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Type Vbs fe f l DS(on) Package Marking BSS 100 100 V 0.22 A 6Í2 TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code
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Q62702-S499
Q62702-S007
Q62702-S206
E6288
E6296
E6325
S35bQ5
Q133777
SQT-89
B535bQ5
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP Darlington transistors FEATURES BCV26; BCV46 PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 base • Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS
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BCV26;
BCV46
BCV27
BCV47.
BCV26
BCV46
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transistor marking SA p sot-23
Abstract: transistor marking SA sot-23
Text: Central" CMPT2907AE Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: The Central Semiconductor CMPT2907AE is an Enhanced version of the CMPT2907A PNP Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications.
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CMPT2907AE
CMPT2907AE
CMPT2907A
OT-23
150mA,
transistor marking SA p sot-23
transistor marking SA sot-23
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BFG55A
Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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LCD01
BFG55A
philips discrete a440
IC05 philips
a1211 lg
SMD MARKING CODE ALg
BST60
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