npn transistor 0.1A 400V sot-23
Abstract: npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D
Text: MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44
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MMBTA44
350mW
OT-23
21-Sep-2010
npn transistor 0.1A 400V sot-23
npn high voltage transistor 500v sot23
vbe 10v, vce 500v NPN Transistor
top marking 3d npn
NPN VCEO 500V sot23
MMBTA44
3D NPN 400V
TRANSISTOR MARKING 3D
sot-23 Marking 3D
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UMT222A
Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
UMT222A
TRANSISTOR 1P
transistors marking 1p
BC847B
BC857B
MMST2222A
PN2222A
T116
B128D
MARKING 5D NPN
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PDF
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Untitled
Abstract: No abstract text available
Text: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking
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BC847B
BC857B.
BC847B
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sot-23 MARKING CODE 3d
Abstract: marking code 3d Transistor 3D 3D sot23 MARKING CODE 16 transistor sot23 transistor Vbe 3d transistor
Text: Central CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications. Marking Code is 3D.
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CMPTH81
OT-23
100MHz
26-August
sot-23 MARKING CODE 3d
marking code 3d
Transistor 3D
3D sot23
MARKING CODE 16 transistor sot23
transistor Vbe
3d transistor
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Untitled
Abstract: No abstract text available
Text: MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING C B Top View 1 1 3D 2 K E 2 D PACKING INFORMATION
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MMBTA44
OT-23
16-Aug-2012
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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PDF
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1p1 transistor
Abstract: 3DK2222A MMBT2907ALT1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1
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OT-23
3DK2222A
OT-23
MMBT2907ALT1)
-55to
150mA
500mA
100MHz
1p1 transistor
3DK2222A
MMBT2907ALT1
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PDF
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1p1 transistor
Abstract: No abstract text available
Text: 3DK2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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3DK2222A
OT-23
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
150mA
1p1 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR NPN SOT–23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
MMBTA44
MMBTA94
EL00V,
100mA
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Untitled
Abstract: No abstract text available
Text: BC847B Transistors NPN General Purpose Transistor BC847B Features 1 BVCEO < 45V IC=1mA) 2) Complements the BC857B. External dimensions (Unit : mm) 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000
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BC847B
BC857B.
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sot-23 Marking 3D
Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L
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BC856/857/858
100mA)
OT-23
BC856A/B
BC857A/B/C
BC858A/B/C
BC856
sot-23 Marking 3D
BC856
sot-23 MARKING CODE 3d
3D marking sot23
3H SOT23
BC856B SOT23
BC856A
BC856B
BC857
BC858
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Marking 3ds sot
Abstract: Q62702-C2532 VPS05604
Text: BC 856S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type Marking Ordering Code
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VPS05604
Q62702-C2532
OT-363
EHP00382
EHP00379
Marking 3ds sot
Q62702-C2532
VPS05604
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2N06L13
Abstract: Diode smd code 30a ANPS071E BSPD30N06S2L-13 SPD30N06S2L-13 G1625
Text: SPD30N06S2L-13 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS 55 V RDS on 13 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD30N06S2L-13
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SPD30N06S2L-13
Q67040-S4254
2N06L13
BSPD30N06S2L-13,
SPD30N06S2L-13
2N06L13
Diode smd code 30a
ANPS071E
BSPD30N06S2L-13
G1625
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Untitled
Abstract: No abstract text available
Text: 3DA752 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V
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O-251/TO-252-2L
3DA752
O-251
O-252-2L
500mA
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MARKING W3 SOT23 TRANSISTOR
Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*
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MPSH81
MMBTH81
MPSH81
OT-23
MARKING W3 SOT23 TRANSISTOR
rf transistor mark code H1
transistor marking code ne SOT-23
marking code w2 sot23
pnp rf transistor
sot23 Transistor marking p2
sot-23 Marking 3D
marking 3d sot-23
Marking code mps
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ci hf cd 100
Abstract: No abstract text available
Text: Central CMPTA44 Sem iconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.
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OCR Scan
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CMPTA44
CMPTA44
OT-23
ci hf cd 100
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smd transistor marking code D13
Abstract: No abstract text available
Text: BSP 373 I nf ineon technologie» SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated •^GS .h =2-1 •4 0 V Type Vbs b B DS(on) Package Marking BSP 373 100 V 1.7 A 0.3 n SOT-223 BSP 373 Type BSP 373 Ordering Code Q67000-S301
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OCR Scan
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OT-223
Q67000-S301
E6327
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd transistor marking code D13
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PDF
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S3V 05
Abstract: No abstract text available
Text: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3
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OCR Scan
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3SK240
S3V 05
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC3123 NPN EPITAXIAL SILICON TRANSISTOR MIXER FOR VHF TV TUNER SOT-23 Gce = 2 3dB Cre - 0 . 4 p F ABSOLUTE MAXIMUM RATINGS T a = 2 5 ° o Unit Symbol Characteristic Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current
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OCR Scan
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KSC3123
OT-23
200MHz,
260MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2223 HIGH FREQUENCY AMPLIFIER Vary small size to assure good space factor in hybrid 1C applications • »T= 600MHz Typ. lE= -1mA • Cob=1pF Typ (Vcs=6V) • NF=3dB Typ (f=100MHz) SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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OCR Scan
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KSC2223
600MHz
100MHz)
OT-23
00247ti0
7Tb414E
DDE47bl
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PDF
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Transistor hFE CLASSIFICATION Marking CE
Abstract: No abstract text available
Text: KSC2223 NPN EPITAXIAL SILICON TRAN SISTO R HIGH FREQUENCY AM PLIFIER Very small size to assure good space factor in Hybrid 1C applications fr=600MHz Typ. I e = -1mA CoB=pF Typ(VCB=6V) NF=3dB Typ (f=100MHz) ABSO LU TE MAXIMUM RATINGS (TA=25t:) Characteristic
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OCR Scan
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KSC2223
600MHz
100MHz)
Transistor hFE CLASSIFICATION Marking CE
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC2223 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER TO -92 Very sm all size to assure good space fa cto r In Hybrid 1C applications fT= 6 0 0 M H zT yp . IE= -1mA C0B=pF T yp(VCB=6V) N F=3dB Typ (f=100M Hz) ABSOLUTE MAXIMUM RATINGS (TA=25°C)
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OCR Scan
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KSC2223
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PDF
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