Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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PDF
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MMBT4403
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
MMBT4403
-100A
-100A,
-150mA
-150mA,
-15mA
150mA,
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
MMBTA05
OT-23
100mA
100mA,
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :MMBT4403=2T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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Original
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OT-23
OT-23
MMBT4403
-150mA
-150mA,
-15mA
150mA,
-20mA
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PDF
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MMBTA05
Abstract: marking 1h
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA05 SOT-23 TRANSISTOR NPN FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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Original
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OT-23
MMBTA05
OT-23
100mA
100mA,
100MHz
MMBTA05
marking 1h
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit
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OT-23
MMBTA92
OT-23
-200V,
-10mA
-30mA
-20mA,
30MHz
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PDF
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marking 2d
Abstract: MMBTA92 SOT-23 2D sot 23 transistor sot23 marking 2d 2D SOT23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units
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Original
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OT-23
MMBTA92
OT-23
-100A,
-200V,
-10mA
-30mA
-20mA,
marking 2d
MMBTA92
SOT-23 2D
sot 23 transistor
sot23 marking 2d
2D SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR PNP FEATURES •As complementary type, the NPN transistor MMBT3904LT1 is Recommended ·Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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Original
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OT-23
MMBT3906LT1
MMBT3904LT1
-10mA
-50mA
100MHz
-10mA
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PDF
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Marking 2A
Abstract: 2a transistor sot 23 MMBT3906 SOT-23 SOT-23 2A 2A marking MMBT3906 transistor SOT23 2A MMBT3906 sot-23 2A transistor 2A MARKING SOT23
Text: MMBT3906 SOT-23 Transistor PNP 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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Original
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MMBT3906
OT-23
OT-23
MMBT3904
-10mA
-50mA
-100mA
-50mA,
-10mA,
100MHz
Marking 2A
2a transistor sot 23
MMBT3906 SOT-23
SOT-23 2A
2A marking MMBT3906
transistor SOT23 2A
MMBT3906
sot-23 2A transistor
2A MARKING SOT23
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PDF
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sot23 marking 2d
Abstract: 2D SOT23 2D TRANSISTOR marking 2D
Text: MMBTA92 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage transistor MARKING:2D Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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Original
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MMBTA92
OT-23
OT-23
-100A,
-200V,
-10mA
-30mA
-20mA,
sot23 marking 2d
2D SOT23
2D TRANSISTOR
marking 2D
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PDF
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2A MARKING SOT23
Abstract: No abstract text available
Text: MMBT589 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High current surface mount PNP silicon switching transistor for Load management in portable applications MARKING :589 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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MMBT589
OT-23
OT-23
-100A
-10mA
-500mA
-500mA,
-50mA
-100mA
2A MARKING SOT23
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PDF
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Marking br sot23 Transistor
Abstract: MMBT4403 2T sot-23 sot23 2t marking pc sot-23 transistor BR SOT23 MMBT4403 2T transistor 2T Transistor 2 a sot23 sot 23 transistor
Text: MMBT4403 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Switching transistor MARKING :MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage
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MMBT4403
OT-23
OT-23
MMBT4403
-100A
-100A,
-150mA
-150mA,
-15mA
150mA,
Marking br sot23 Transistor
2T sot-23
sot23 2t
marking pc sot-23 transistor
BR SOT23
MMBT4403 2T
transistor 2T
Transistor 2 a sot23
sot 23 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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OT-23
M8550
-100mA
-800mA
-800mA,
-80mA
-20mA
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PDF
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marking G1 sot-23
Abstract: MMBT5401 MMBT5551 MARKING G1
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR NPN SOT-23 FEATURES z Complementary to MMBT5401 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER - 3. COLLECTOR MARKING: G1
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OT-23
MMBT5551
OT-23
MMBT5401
100MHz
MMBT5551
marking G1 sot-23
MMBT5401
MARKING G1
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 2L
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Original
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OT-23
MMBT5401
OT-23
MMBT5551
-10mA
-50mA
30MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT2369 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : M1J 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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Original
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OT-23
MMBT2369
100mA
MMBT2369
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage
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OT-23
S9014LT1
S9015LT1
30MHz
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PDF
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m8050
Abstract: y11 transistor M8050-TRANSISTOR transistor y11 sot-23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8050 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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Original
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OT-23
M8050
100mA
800mA
800mA,
30MHz
m8050
y11 transistor
M8050-TRANSISTOR
transistor y11 sot-23
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PDF
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ss8050 sot-323
Abstract: ss8550 Y2 TRANSISTOR SS8050 ss8550 transistor SS8550 SS8050 Y2
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors SS8550 SOT-323 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2. Emitter 3. Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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OT-323
SS8550
OT-323
SS8050
ss8050 sot-323
ss8550 Y2 TRANSISTOR
SS8050
ss8550
transistor SS8550
SS8050 Y2
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PDF
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2SA1179
Abstract: 10u 35v
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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OT-23
2SA1179
-50mA
-10mA
2SA1179
10u 35v
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PDF
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ss8050 sot-323
Abstract: SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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OT-323
SS8050
OT-323
SS8550
ss8050 sot-323
SS8050 Y1
ss8050 TRANSISTOR
SS8050
SS8050 equivalent
ss8550
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PDF
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MARKING 2L
Abstract: MMBT5401 MMBT5551
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR PNP SOT-23 FEATURES z Complementary to MMBT5551 z Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING: 2L
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Original
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OT-23
MMBT5401
OT-23
MMBT5551
-10mA
-50mA
30MHz
MMBT5401
MARKING 2L
MMBT5551
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PDF
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transistor y21 sot-23
Abstract: M8550
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 M8550 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y21 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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Original
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OT-23
M8550
-100A,
-100mA
-800mA
-800mA,
-80mA
transistor y21 sot-23
M8550
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors M8050 SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter
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Original
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OT-23
M8050
OT-23
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PDF
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