Untitled
Abstract: No abstract text available
Text: SO T2 3 PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors Rev. 1 — 15 May 2014 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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O-236AB)
PDTD143ET
O-236AB
PDTB143ET
PDTD143XT
PDTB143XT
PDTD114ET
PDTB114ET
AEC-Q101
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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marking 724G
Abstract: specifications of scr rating package marking 724g 724G marking 3FW sot-23 specifications of scr diode vx marking sot23-6 SOT23-6 Marking .64 SP724 diode array
Text: Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection Pb RoHS GREEN SP724 Lead-Free/Green Series Description
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SP724
SP724
OT-23
OT23-6
180mm
EIA-481
marking 724G
specifications of scr rating
package marking 724g
724G
marking 3FW sot-23
specifications of scr diode
vx marking sot23-6
SOT23-6 Marking .64
diode array
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vx marking sot23-6
Abstract: No abstract text available
Text: Silicon Protection Arrays SCR Diode Array for ESD and Transient Overvoltage Protection Pb RoHS GREEN SP724 Lead-Free/Green Series Description
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SP724
SP724
OT-23
OT23-6
180mm
EIA-481
vx marking sot23-6
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NP061A1
Abstract: UNR31A1
Text: Composite Transistors NP061A1 Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 0.12+0.03 -0.02 4 2 1 0 to 0.02 3 0.10 • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment
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NP061A1
UNR31A1
NP061A1
UNR31A1
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Wago 4 pole relay
Abstract: OF 8 pin optocoupler EL B17 WAGO 733 erni rel 14
Text: INTERFACE ELECTRONIC Full Line Catalog, Volume 4 Edition: 2012/2013 4 WAGO Registered Trademarks CAGE CLAMP WAGO® CAGE CLAMP®@ X-COM® POWER CAGE CLAMP X-COM®@ FIT CLAMP® JUMPFLEX® PUSH WIRE® TO-PASS® TOPJOB® ProServe® TOPJOB®@ EPSITRON® WINSTA®
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W19129
Wago 4 pole relay
OF 8 pin optocoupler EL B17
WAGO 733
erni rel 14
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dv3b
Abstract: LZ2353 LZ23J3G model 780 6v3a bx135 SHARP LQ 150 transistor dv3b
Text: [SPECNo. ISSUE: CClOYOO6 Nov. 19 1998 1 To; PRELIMINARY SPECIFICATIONS Product Type l/2.7-type(6.72mm Model No. Interline Color CCD Area Sensor with 1310k Pixels LZ23J3G %This specifications contains 30 pages including the cover and appendix. If you have any objectionsplease
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1310k
LZ23J3G
WDIP16-P-500C
BX135
dv3b
LZ2353
LZ23J3G
model 780
6v3a
SHARP LQ 150
transistor dv3b
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2sc3518
Abstract: c 3518 transistor mp
Text: :*A i à SH h t i SILICON TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2S C 3518-Z is designed fo r A u d io Frequency A m p lifie r and PACKAGE DMENSIONS in millimeters S w itching, esp ecially in H ybrid Integrated Circuits. FEATURES
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2SC3518-Z
3518-Z
IEI-1209)
2sc3518
c 3518
transistor mp
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D 4242 transistor
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF3P03HD Medium Power Surface Mount Products Motorola Preferred Dtvlci T M O S P-Channel Field Effect Transistors SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS MiniMOS™ devices are an advanced series of power MOSFETs
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MMSF3P03HD
D 4242 transistor
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2745 TOSHIBA FIELD EFFECT TRANSISTOR m itr SILICON N CHANNEL MOS TYPE L2- tt-M O SV • m. m m a r HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive
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2SK2745
100//A
20kil)
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2964 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-MOSVI 2SK2964 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rd S (ON) = 0-13n (Typ.)
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2SK2964
0-13n
100/j
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Helipot
Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Text: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used
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MIL-S-19500/425
JAN2N5431,
JANTX2N5431
pulse-repe0/425
MIL-S-19500,
MIL-S-19500
Helipot
JAN2N5431
MIL-STD-750-Test
capacitor ttc 342
J3 DIODE ST
JANTX2N5431
20.000H
unijunction application note
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-7r-MOS V 2 S J 40 2 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS TO-22QFL 4 V Gate Drive
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2SJ402
O-22QFL
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BC807
Abstract: BC817 BC817-16 BC817-25 BC817-40
Text: SEMICONDUCTOR TECHNICAL DATA BC817 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Complementary to BC807. DIM A B C D E G H J K L M N P MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage
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BC817
BC807.
BC807
BC817
BC817-16
BC817-25
BC817-40
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2sk2843
Abstract: No abstract text available
Text: TO SHIBA 2SK2843 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2843 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •
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2SK2843
0-54n
2sk2843
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4252 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4252 Unit in mm TV TUNER, VHF OSCILLATOR APPLICATIONS COMMON COLLECTOR • 2.1 ±0.1 1 .2 5 Í0 .1 . Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)
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2SC4252
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 LITHIUM ION BATTERY NOTE BOOK PC INDUSTRIAL APPLICATIONS Unit in mm PORTABLE MACHINES AND TOOLS 2.5V Gate Drive Low Drain-Source ON Resistance : Rd S (ON)= 41mfi (Typ.)
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TPC8202
41mfi
10//A
200//A)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8203 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSII TPC8203 LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS Low Drain-Source ON Resistance : RßS (ON)= l^m H (Typ.) High Forward Transfer Admittance: |Yfs| = 8S (Typ.)
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TPC8203
10//A
j--25Í
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gn2011
Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT
Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? *k iL tm , - is . i f H ■ 43 f t I L * « T A B U S ' < 7 > r -
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tiA-Ac37'
MA334
MA345
MA551
MA704
MA152WA
MA152WK
MA153
MA151WA
MA151WK
gn2011
XN7602
MA151WK
UN2212
1Ft 6PIN
M2D Package
m2b 160 le 4
5P J TRANSISTOR MARKING
3pin 20100
9YDT
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SC4527 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4527 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS COMMON BASE TV TUNER, UHF CONVERTER APPLICATIONS (COMMON BASE) 1.25 ± 0 .1 • Transition Frequency is High and Dependent on Current
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2SC4527
2SC4246.
100MHz
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8303 TENTATIVE TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII TPC8303 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SOP-8 8 Low Drain-Source ON Resistance
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TPC8303
--10//A
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Untitled
Abstract: No abstract text available
Text: TO S H IBA RN2101 ~RN2106 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2101, RN2102, RN2103, RN2104, RN2105, RN2106 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6 ± 0.2 A N D DRIVER CIRCUIT APPLICATIONS. 0.8 ± 0.1 in •
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RN2101
RN2106
RN2101,
RN2102,
RN2103,
RN2104,
RN2105,
RN1101â
RN1106
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mp42
Abstract: No abstract text available
Text: TOSHIBA MP4209 M P4 2 0 9 TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE L2-?r-MOSV 4 IN 1 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS FOR PRINTER HEAD PIN DRIVER AND PULSE MOTOR DRIVER INDUSTRIAL APPLICATIONS Unit in mm FOR SOLENOID DRIVER 4 V Gate Drive Available
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MP4209
mp42
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