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    TRANSISTOR MARKING A33 Search Results

    TRANSISTOR MARKING A33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING A33 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FS8853A 300mA LDO Linear Regulator with ON/OFF Control General Description The FS8853A is a low-dropout linear regulator with ON/OFF control. The device operates in the input voltage range from +2.5V to +9.0V and delivers 300mA output current. Ordering Information


    Original     		FS8853A 300mA FS8853A FS8853A-xx OT-23-5 100mV FS8853A-29Cx PDF

    PAM3101DAB

    Abstract: PAM3101DAB180 PAM3101AAA250 PAM3101DAB300 P3101E PAM3101DAB250 OT89-5 capacitor a475 P3101I PAM3101DAB280
    Text: PAM3101 300mA High PSRR Low Dropout CMOS Linear Regulator Features General Description n Low Dropout Voltage: 180mV@300mA V O=3.3V n Output Voltage Accuracy within ±2% n Quiescent Current : 65 A Typ. n High PSRR: 70dB@1kHz n Excellent Line and Load Regulation


    Original     		PAM3101 300mA 180mV 300mA OT-23 OT-89 PAM3101 SC70-3L PAM3101DAB PAM3101DAB180 PAM3101AAA250 PAM3101DAB300 P3101E PAM3101DAB250 OT89-5 capacitor a475 P3101I PAM3101DAB280 PDF

    AME8847

    Abstract: AME8847AEFT180Z AME8847AEFT250Z AME8847AEGT180Z AME8847AEGT330Z A33W 1mA-800mA LDO 3.3V 300MA SOT-89 A884
    Text: AME, Inc. 800mA CMOS LDO AME8847 n General Description The AME8847 of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The spacesaving SOT-223 & SOT-89 packages are attractive for


    Original     		800mA AME8847 AME8847 OT-223 OT-89 2095-DS8847-A AME8847AEFT180Z AME8847AEFT250Z AME8847AEGT180Z AME8847AEGT330Z A33W 1mA-800mA LDO 3.3V 300MA SOT-89 A884 PDF

    A884

    Abstract: AME8847 AME8847AEFT180Z AME8847AEFT250Z AME8847AEGT180Z A8847
    Text: AME, Inc. AME8847 n General Description The AME8847 of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The spacesaving SOT-223 & SOT-89 packages are attractive for


    Original     		AME8847 AME8847 OT-223 OT-89 800mA 2095-DS8847-A A884 AME8847AEFT180Z AME8847AEFT250Z AME8847AEGT180Z A8847 PDF

    AME8847

    Abstract: Linear Regulator AME8847AEFT180Z AME8847AEFT250Z AME8847AEGT180Z POSITIVE VOLTAGE REGULATORS SOT-223 5V 100mA
    Text: AME AME8847 n General Description The AME8847 of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The spacesaving SOT-223 & SOT-89 packages are attractive for "Pocket" and "Hand Held" applications.


    Original     		AME8847 AME8847 OT-223 OT-89 800mA 2095-DS8847-A Linear Regulator AME8847AEFT180Z AME8847AEFT250Z AME8847AEGT180Z POSITIVE VOLTAGE REGULATORS SOT-223 5V 100mA PDF

    marking A33

    Abstract: TRANSISTOR MARKING A33
    Text: Preliminary Product Description SGA-3363 Stanford Microdevices’ SGA-3363 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		SGA-3363 50-ohm SGA-3363 DC-3600MHz DC-3600 EDS-100634 marking A33 TRANSISTOR MARKING A33 PDF

    TRANSISTOR MARKING A33

    Abstract: SGA-3386 3386 transistor
    Text: Product Description Stanford Microdevices’ SGA-3386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		SGA-3386 DC-5000 SGA-3386 EDS-100633 TRANSISTOR MARKING A33 3386 transistor PDF

    TRANSISTOR MARKING A33

    Abstract: 69A5 SGA-3363
    Text: Product Description Stanford Microdevices’ SGA-3363 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases


    Original     		SGA-3363 SGA-3363 EDS-100634 TRANSISTOR MARKING A33 69A5 PDF

    TRANSISTOR MARKING A33

    Abstract: SGA-3363 SGA-3363-TR1 220 ohm DC-*MHz Amplifier
    Text: Preliminary Product Description SGA-3363 Stanford Microdevices’ SGA-3363 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.6V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


    Original     		SGA-3363 SGA-3363 50-ohm DC-3600MHz DC-3600 EDS-100634 TRANSISTOR MARKING A33 SGA-3363-TR1 220 ohm DC-*MHz Amplifier PDF

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    DVB-T Schematic set top box

    Abstract: marking 0g sot-89 Marking L2 Packaging SOT23-5
    Text: NCP4687 500 mA, High PSRR, LDO Linear Voltage Regulator • • • • • • • • • • Operating Input Voltage Range: 2.5 V to 5.25 V Output Voltage Range: 0.7 to 3.6 V available in 0.1 V steps ±0.8% Output Voltage Accuracy @ Vout > 1.8 V Output noise : 40 mVrms


    Original     		NCP4687 NCP4687/D DVB-T Schematic set top box marking 0g sot-89 Marking L2 Packaging SOT23-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: NCP4687 500 mA, High PSRR, LDO Linear Voltage Regulator • • • • • • • • • • Operating Input Voltage Range: 2.5 V to 5.25 V Output Voltage Range: 0.7 to 3.6 V available in 0.1 V steps ±0.8% Output Voltage Accuracy @ Vout > 1.8 V Output noise : 40 mVrms


    Original     		NCP4687 NCP4687x 711AH NCP4687/D PDF

    DVB-T Schematic set top box

    Abstract: marking 0g sot-89 NCP4687DH12T1G J18-J25 marking 9x sot23-5 9x sot23-5 3.3 LDO
    Text: NCP4687 500 mA, High PSRR, LDO Linear Voltage Regulator • • • • • • • • • • Operating Input Voltage Range: 2.5 V to 5.25 V Output Voltage Range: 0.7 to 3.6 V available in 0.1 V steps ±0.8% Output Voltage Accuracy @ Vout > 1.8 V Output noise : 40 mVrms


    Original     		NCP4687 NCP4687/D DVB-T Schematic set top box marking 0g sot-89 NCP4687DH12T1G J18-J25 marking 9x sot23-5 9x sot23-5 3.3 LDO PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    AMD A75

    Abstract: gigabyte 865 MOTHERBOARD CIRCUIT diagram amd athlon PIN LAYOUT voltage ground TRANSISTOR MAPS A72 Northbridge amd athlon PIN LAYOUT AMD Athlon 64 pin diagram AMD A88 gigabyte MOTHERBOARD CIRCUIT diagram AMD MOTHERBOARD CIRCUIT diagram
    Text: Preliminary Information AMD Athlon TM Processor Data Sheet Publication # 21016-D Issue Date: August 1999 Preliminary Information 1999 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced


    Original     		21016-D AMD-751TM AMD-756TM 21016D/0--August AMD A75 gigabyte 865 MOTHERBOARD CIRCUIT diagram amd athlon PIN LAYOUT voltage ground TRANSISTOR MAPS A72 Northbridge amd athlon PIN LAYOUT AMD Athlon 64 pin diagram AMD A88 gigabyte MOTHERBOARD CIRCUIT diagram AMD MOTHERBOARD CIRCUIT diagram PDF

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1119 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSII-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • U n it in mm Low Drain-Source ON Resistance : Rd S(O N )~3.00 (Typ.)


    OCR Scan     		2SK1119 20kil) PDF

    marking 77s

    Abstract: No abstract text available
    Text: TO SHIBA 2SJ412 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-M O SV 2SJ412 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-22QFL 10.3MAX


    OCR Scan     		2SJ412 O-22QFL 0-15il --60V) 20kf2) --25V, marking 77s PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK259 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK259 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS. TV TUNER VHF W ID E BAND RF AM PLIFIER APPLICATIONS. 2.1 • • • Superior Cross Modulation Performance. Low Reverse Transfer Capacitance : Crss = 0.025pF Typ.


    OCR Scan     		3SK259 025pF PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 3SK259 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK259 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS • • • 2.1 ± 0.1 ,1.25 + 0.1 Superior Cross Modulation Performance.


    OCR Scan     		3SK259 025pF PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1120 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II5 2 S K 1 120 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm • Low Drain-Source ON Resistance


    OCR Scan     		2SK1120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2715 TO SHIBA TOSHIBA TRANSISTOR 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS • • + 0.5 2.5-0.3 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.


    OCR Scan     		2SC2715 PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF