TRANSISTOR MARKING BH RA Search Results

TRANSISTOR MARKING BH RA Result Highlights (5)

Part	Manufacturer	Description
54F139/BEA	Rochester Electronics LLC	54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA)
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)
54F151/BFA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA)
54F157/BEA	Rochester Electronics LLC	Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA)
54F153/BEA	Rochester Electronics LLC	54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA)

TRANSISTOR MARKING BH RA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTOR bH-16 Abstract: TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.	Original	BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 MOUN50 TRANSISTOR bH-16 TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor	PDF
BD NPN transistors Abstract: BCX56 transistor bc icbo nA npn bc transistor icbo nA bcx56-16 MARKING BM SOT89 marking r4 diode BCX54-10 BCX54 BM marking code Text: Central BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE MAXIMUM RATINGS: TA=25°C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Peak Base Current	Original	BCX54 BCX55 BCX56 OT-89 BCX54, BCX55, BCX56 J55-16, BCX56-16) 500mA BD NPN transistors transistor bc icbo nA npn bc transistor icbo nA bcx56-16 MARKING BM SOT89 marking r4 diode BCX54-10 BCX54 BM marking code	PDF
transistor smd bh Abstract: transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386 Text: Transistors SMD Type Low Frequency Transistor 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit	Original	2SB1386 30MHz transistor smd bh transistor smd marking bh MARKING SMD PNP TRANSISTOR R marking BH rank R smd marking BH bh marking KEXIN BH SMD MARKING SMD PNP TRANSISTOR TRANSISTOR SMD PNP 1A 2SB1386	PDF
TRANSISTOR bH-16 Abstract: TRANSISTOR bH-10 sot-223 body marking A G Q E bh16 transistor BCP53T1 BH bh-16 transistor with marking BH marking BH SOT-223 bh16 BH 16 Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.	Original	BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56T1/D TRANSISTOR bH-16 TRANSISTOR bH-10 sot-223 body marking A G Q E bh16 transistor BCP53T1 BH bh-16 transistor with marking BH marking BH SOT-223 bh16 BH 16	PDF
TRANSISTOR bH-16 Abstract: BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.	Original	BCP56T1 OT-223 inch/1000 BCP56T3 inch/4000 100mA 250mA 500mA TRANSISTOR bH-16 BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor	PDF
Untitled Abstract: No abstract text available Text: Product specification 2SB1386 Features Low VCE sat . VCE(sat) = -0.35V (Typ.) (IC/IB = -4A / -0.1A) Excellent DC current gain Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage	Original	2SB1386 30MHz	PDF
BCX56 Abstract: BCX56-10-BK BCX56-16 BCX5616-BL BCX56-10 Text: BCX56 BCX56 SOT-89 TRANSISTOR NPN FEATURES Power dissipation 0.5 PCM: Collector current 1 ICM: Collector-base voltage 100 V(BR)CBO: 1. BASE 2. COLLECTOR W (Tamb=25℃) 1 2 3. EMITTER A 3 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	Original	BCX56 OT-89 150mA 500mA BCX56-10 BCX56-16 BCX56 BCX56-10 BCX56-10-BK BCX56-16 BCX5616-BL	PDF
PI74STX1GU04CEX Abstract: PI74STX1GU04TEX 203-B PI74STX1GU04 T5 MARKING CODE 5PIN marking AA 6-pin PI74STX1GU04A PI74STX1GU04CEX date code marking Text: PI74STX1GU04 SOTiny Gate STX Unbuffered Inverter Description Features • • • • • • – – – High-speed: tPD = 2.6ns typical into 50pF @ 5V VDD Unbuffered Output Broad operating range: VDD = 1.65V – 5.5V Power down high-impedance inputs/outputs	Original	PI74STX1GU04 PI74STX1GU04 PD-2074 PI74STX1GU04TEX PI74STX1GU04CEX PI74STX1GU04ZREX PS8562E PI74STX1GU04CEX PI74STX1GU04TEX 203-B T5 MARKING CODE 5PIN marking AA 6-pin PI74STX1GU04A PI74STX1GU04CEX date code marking	PDF
TRANSISTOR bH-16 Abstract: TRANSISTOR bH-10 BCP56-10T1 bh16 BH-16 SOT Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.	Original	BCP56T1 OT-223 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56 TRANSISTOR bH-16 TRANSISTOR bH-10 BCP56-10T1 bh16 BH-16 SOT	PDF
63 sot23 6pin Abstract: PI74STX1GU04CEX Text: PI74STX1GU04 SOTinyTM Gate STX Unbuffered Inverter Description Features • • • • • • – – – High-speed: tPD = 2.6ns typical into 50pF @ 5V VDD Unbuffered Output Broad operating range: VDD = 1.65V – 5.5V Power down high-impedance inputs/outputs	Original	PI74STX1GU04 PI74STX1GU04 PD-2074 PI74STX1GU04TEX PI74STX1GU04CEX PI74STX1GU04ZRE PS8562E 63 sot23 6pin	PDF
BCX56 Abstract: BCX56-16 BCX56-10 Text: BCX56 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS ( TA=25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage	Original	BCX56 OT-89 BCX56 BCX56-10 BCX56-16 500mA 150mA BCX56-10 BCX56-16	PDF
3055VL Abstract: a9hv transistor WT9 MTD3055VL u6 transistor AYRA Text: MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional	Original	MTD3055VL MTD3055VL O-252 3055VL a9hv transistor WT9 u6 transistor AYRA	PDF
NSVBCP56 Abstract: No abstract text available Text: BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features	Original	BCP56 BCP56T1G inch/1000 BCP56T3G inch/4000 BCP53T1G BCP56T1/D NSVBCP56	PDF
Untitled Abstract: No abstract text available Text: BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features	Original	BCP56 BCP56T1G inch/1000 BCP56T3G inch/4000 BCP53T1G BCP56T1/D	PDF

TRANSISTOR bH-16 Abstract: BH-16 transistor marking BH marking BH SOT-223 BCP53T1 BH BH-16 BH-16 SOT onsemi SOT-223 16T1 BCP53T1 Text: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.	Original	BCP56T1 OT-223 OT-223 inch/1000 BCP56T3 inch/4000 BCP56T1/D TRANSISTOR bH-16 BH-16 transistor marking BH marking BH SOT-223 BCP53T1 BH BH-16 BH-16 SOT onsemi SOT-223 16T1 BCP53T1	PDF
TRANSISTOR bH-16 Abstract: bh16 transistor BH-16 BH-16 ON bcp56 SBCP56 SBCP56T1 marking BH marking BH-16 transistor with marking BH Text: BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.	Original	BCP56 SBCP56 OT-223 BCP56T1 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56T1/D TRANSISTOR bH-16 bh16 transistor BH-16 BH-16 ON SBCP56T1 marking BH marking BH-16 transistor with marking BH	PDF
Untitled Abstract: No abstract text available Text: BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.	Original	BCP56 SBCP56 BCP56T1 inch/1000 BCP56T3 inch/4000 BCP53T1 BCP56T1/D	PDF
147 B transistor Abstract: Transistor 2SB 148 2SB1386 2sb transistor Text: 2SB1386 Transistor, PN P Features Dimensions Units : mm available in MPT3 (MPT,SOT-89 SC-62) package package marking: 2SB1386; BH-*, where ★ is hFE code 2SB1386 (MPT3) low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = -4 A/-0.1A	OCR Scan	2SB1386 OT-89 SC-62) 2SB1386; 2SB1386 147 B transistor Transistor 2SB 148 2sb transistor	PDF
Untitled Abstract: No abstract text available Text: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A	OCR Scan	2SB1386 OT-89 SC-62) 2SB1386; 2SB1386 QG14737 2SB1412F5 2SB1412F5	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC 42E ]> MMBTH17 B 7U4142 000^054 2 »StlGK NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation	OCR Scan	7U4142 MMBTH17 200MHz	PDF
transistor BFT 95 Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor Text: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !	OCR Scan	000531b ft-11 569-GS 000s154 hal66 if-11 transistor BFT 95 transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor	PDF
BCX71H Abstract: No abstract text available Text: BCX71H PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C o lle c to r-B a s e V o lta g e C o lle c to r-E m itte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t	OCR Scan	BCX71H KS5086 -10nA -50mA -10mA, -50mA, BCX71H	PDF
sc59 Abstract: BH ar transistor 2PB709R 2PB709S 2PD601A lem HA 2PB709 2PB709A 2PB709AQ 2PB709Q Text: Philips Semiconductors H 7 1 1 0 fi2 b 0 G7 D0 1 S b 4 fi IH P H IN PNP general purpose transistor FEATURES Objective specification 2PB709; 2PB709A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. & DESCRIPTION a PNP transistor in a plastic SC59	OCR Scan	0G70D15 2PB709; 2PB709A 2PD601 2PD601A MSA314 2PB709Q: 2PB709R: 2PB709S: 2PB709AQ: sc59 BH ar transistor 2PB709R 2PB709S lem HA 2PB709 2PB709A 2PB709AQ 2PB709Q	PDF
marking of m7 diodes Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2 Text: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.	OCR Scan	BSS64 BSS63. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 marking of m7 diodes BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2	PDF

TRANSISTOR MARKING BH RA Search Results

TRANSISTOR MARKING BH RA Result Highlights (5)

TRANSISTOR MARKING BH RA Datasheets Context Search

TRANSISTOR bH-16

BD NPN transistors

transistor smd bh

TRANSISTOR bH-16

TRANSISTOR bH-16

Untitled

BCX56

PI74STX1GU04CEX

TRANSISTOR bH-16

63 sot23 6pin

BCX56

3055VL

NSVBCP56

Untitled

TRANSISTOR bH-16

TRANSISTOR bH-16

Untitled

147 B transistor

Untitled

Untitled

transistor BFT 95

BCX71H

sc59

marking of m7 diodes