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    TRANSISTOR MARKING C RANK Y Search Results

    TRANSISTOR MARKING C RANK Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING C RANK Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: KTX111T
    Text: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 6 5 C 4 J Marking Q1 h FE Rank Q2 Type Name


    Original     		PDF KTX111T 600mm Transistor hFE CLASSIFICATION Marking CE KTX111T

    p421 coupler

    Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
    Text: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety


    Original     		PDF TLP227GA TLP227G TLP227GA TLP227G/TLP597GA/TLP227GA-2 p421 coupler MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note

    transistor 1g

    Abstract: MARKING 1G TRANSISTOR ktc32 KTA1298
    Text: KTA1298 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd * PNP EPITAXIAL SILICON TRANSISTOR Complement to KTC3265 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Package:SOT-23 Unit Collector-Base Voltage Vcbo


    Original     		PDF KTA1298 KTC3265 OT-23 -10uA -500mA -20mA -10mA 062in -100mA 300uS transistor 1g MARKING 1G TRANSISTOR ktc32 KTA1298

    C1815 GR

    Abstract: 2SC1815 2SC1815GR 2sc1815 transistor micro transistor 2SC1815-GR 2SC1815-BL OF C1815 GR 2SC1815BL 2SC1815 GR
    Text: MCC TM Micro Commercial Components 2SC1815 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		PDF 2SC1815 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL C1815 100uAdc, C1815 GR 2SC1815GR 2sc1815 transistor micro transistor 2SC1815-BL OF C1815 GR 2SC1815BL 2SC1815 GR

    Y1 SOT-89

    Abstract: PXT8050 Marking y1 marking Y1 transistor marking y1 sot-89 transistor marking y1 y1 sot89 PXT8050 Y1
    Text: PXT8050 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features — 4.6 4.4 1.8 1.4 1.6 1.4 B Compliment to PXT8550 2.6 4.25 2.4 3.75 MARKING: Y1 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF PXT8050 OT-89 OT-89 PXT8550 800mA 800mA, 30MHz 100uA, 100mA Y1 SOT-89 PXT8050 Marking y1 marking Y1 transistor marking y1 sot-89 transistor marking y1 y1 sot89 PXT8050 Y1

    C1815 GR

    Abstract: 2SC1815 2SC1815GR 2SC1815-GR c1815 transistor 2SC1815BL 2SC1815 DATASHEET OF C1815 GR 2SC1815-BL 2SC1815 GR
    Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		PDF 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL 2SC1815 C1815 C1815 GR 2SC1815GR 2SC1815-GR c1815 transistor 2SC1815BL 2SC1815 DATASHEET OF C1815 GR 2SC1815-BL 2SC1815 GR

    PXT8550

    Abstract: marking Y2 Y2 SOT-89 transistor marking y2
    Text: PXT8550 SOT-89 Transistor NPN 1. BASE 1 SOT-89 2. COLLECTOR 2 4.6 4.4 1.8 1.4 1.6 1.4 3. EMITTER 3 B Features — 2.6 4.25 2.4 3.75 Compliment to PXT8050 0.8 MIN MARKING: Y2 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF PXT8550 OT-89 OT-89 PXT8050 -800mA -800mA, -80mA -10mA PXT8550 marking Y2 Y2 SOT-89 transistor marking y2

    C1815 GR

    Abstract: 2SC1815 NPN C1815 2SC1815-BL transistor c1815 2SC1815Y 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR
    Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		PDF 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL 2SC1815 C1815 C1815 GR NPN C1815 2SC1815-BL transistor c1815 2SC1815Y 2SC1815BL 2SC1815GR 2SC1815 GR

    p421 coupler

    Abstract: p421 Photocoupler P521 Photocoupler Toshiba P521 Photocoupler P521 G p521 gb p521 gr gr p421 toshiba tlp 759 datasheet TLP521 4pin ic
    Text: 4. Supplementary Information 4–1 Current Transfer Ratio CTR , LED Trigger Current (IFT) Ranking and Marking Unit: mm Standard rank classifications are applied for the CTR of transistor-type photocouplers and for the IFT of MOSFET, SCR, Triac-type photocouplers. Indicative product markings corresponding to rank names are as shown below.


    Original     		PDF TLP180 TLP181 TLP280 TLP280-4 TLP281 TLP281-4 TLP321 TLP321-2/-3/-4 IEC435/ IEC65/ p421 coupler p421 Photocoupler P521 Photocoupler Toshiba P521 Photocoupler P521 G p521 gb p521 gr gr p421 toshiba tlp 759 datasheet TLP521 4pin ic

    NEC 10F triac

    Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
    Text: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117


    Original     		PDF TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP115 TLP115A TLP116 NEC 10F triac TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin

    smd transistor yh

    Abstract: TLP281 smd transistor marking gB smd transistor marking BL TLP281-4 TLP281GB-TP,F toshiba smd marking MRA4007T3G TLP281-1 TLP281GB-TP
    Text: TLP281,TLP281-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP281,TLP281-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM PCMCIA Unit in mm TLP281 and TLP281-4 is a very small and thin coupler, suitable for surface mount assembly in applications such as PCMCIA Fax


    Original     		PDF TLP281 TLP281-4 TLP281-4 UL1577 E67349 smd transistor yh smd transistor marking gB smd transistor marking BL TLP281GB-TP,F toshiba smd marking MRA4007T3G TLP281-1 TLP281GB-TP

    BD772

    Abstract: B772 TRANSISTOR BD772-R H B772 BD772-Y
    Text: MCC TM Micro Commercial Components BD772-R BD772-O BD772-Y BD772-GR   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.5Watts of Power Dissipation. Collector-current 3.0A


    Original     		PDF BD772-R BD772-O BD772-Y BD772-GR -55OC -10mAdc, -100uAdc, BD772 B772 TRANSISTOR H B772

    2SC1815

    Abstract: 2SC1815Y C1815 y 2SC1815-BL 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O
    Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		PDF 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL 2SC1815 C1815 -55oC 125oC 2SC1815Y C1815 y 2SC1815-BL 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O

    LOT CODE NE NEC

    Abstract: NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking
    Text: Information TAPING SPECIFICATIONS OF SUPER MINI MOLD SEMICONDUCTORS FOR HIGH FREQUENCY USE Document No. P10687EJ4V0IF00 4th edition Date Published March 1998 N CP(K) 1997 Printed in Japan This document is subject to change according to improving the specifications.


    Original     		PDF P10687EJ4V0IF00 us588-6130 LOT CODE NE NEC NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking

    2SC1815

    Abstract: C1815 C1815 GR 2SC1815-BL 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O
    Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		PDF 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL 2SC1815 C1815 -55oC 125oC C1815 C1815 GR 2SC1815-BL 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O

    transistor c2383

    Abstract: C2383 BR C2383 C2383 y transistor c2383 y C2383 NPN Transistor 2SC2383Y C2383 -Y transistor c2383 0 c2383 transistor
    Text: MCC TM Micro Commercial Components 2SC2383-R 2SC2383-O 2SC2383-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 0.9Watts of Power Dissipation. Collector-current 1.0A Collector-base Voltage 160V


    Original     		PDF 2SC2383-R 2SC2383-O 2SC2383-Y O-92MOD -55OC C2383 10mAdc, transistor c2383 BR C2383 C2383 y transistor c2383 y C2383 NPN Transistor 2SC2383Y C2383 -Y transistor c2383 0 c2383 transistor

    marking A1 TRANSISTOR

    Abstract: KTX301E power diode f1 transistor mark TRANSISTOR A1 TR
    Text: SEMICONDUCTOR KTX301E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A Simplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.


    Original     		PDF KTX301E 100mA marking A1 TRANSISTOR KTX301E power diode f1 transistor mark TRANSISTOR A1 TR

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTX401E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES C A Simplify circuit design. 1 2 DIM A 5 A1 Thin Extreme Super mini type with 5pin.


    Original     		PDF KTX401E 100mA

    2SC1815

    Abstract: 2SC1815GR 2SC1815-BL 2SC1815-GR 2SC1815BL 2SC1815 GR 2SC1815 Y 2SC1815O NPN C1815 C1815 bl
    Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		PDF 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL 2SC1815 C1815 -55oC 125oC 2SC1815GR 2SC1815-BL 2SC1815BL 2SC1815 GR 2SC1815 Y 2SC1815O NPN C1815 C1815 bl

    MARKING toshiba TLP621-4

    Abstract: tlp621
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP621,-2,-4 T LP6 2 1 U nit in mm P R O G R A M M A B L E CONTROLLER TLP621 W eight : 0.26g A C / D C - IN P U T M O D ULE SOLID STATE RELA Y The TOSHIBA TLP621, -2, and -4 consists of a photo­ transistor optically coupled to a gallium arsenide


    OCR Scan     		PDF TLP621 TLP621, TLP621-2 TLP621-4 11-5B1 TLP621-2 TLP621 l29dU MARKING toshiba TLP621-4

    2SK3320

    Abstract: No abstract text available
    Text: TOSHIBA 2SK3320 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3320 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Two devices in a Ultra Super Mini five pins package |Yfs| = 15 mS (Typ.) High |Yfs| (VDS = 10 V, V o s = 0) High Breakdown Voltage VGDS = -5 0 V


    OCR Scan     		PDF 2SK3320 2SK3320

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1875 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K18 7 5 HIGH FREQUENCY AM PLIFIER APPLICATIONS. AM HIGH FREQUENCY AM PLIFIER APPLICATIONS. AUDIO FREQUENCY AM PLIFIER APPLICATIONS. High |Yfs| : IYfs | = 25mS Typ. Low Gigs


    OCR Scan     		PDF 2SK1875

    2SK3320

    Abstract: No abstract text available
    Text: TO SH IBA 2SK3320 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK3320 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Two devices in a Ultra Super Mini five pins package |Yfs| = 15 mS (Typ.) High |Yfc| High Breakdown Voltage Super Low Noise


    OCR Scan     		PDF 2SK3320 2SK3320

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK711 TOSHIBA FIELD EFFECT TRANSISTOR 3 SILICON N CHANNEL JUNCTION TYPE <; K 7m mm • 1 m 1m HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AUDIO FREQUENCY AMPLIFIER APPLICATIONS. High |YfJ : IYfg| = 25mS Typ.


    OCR Scan     		PDF 2SK711