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    TRANSISTOR MARKING C3N Search Results

    TRANSISTOR MARKING C3N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING C3N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.


    Original     		PDF PC3232TB PC3232TB IR260 WS260 HS350 PU10597EJ01V0DS

    PC3225

    Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


    Original     		PDF PC3236TK PC3236TK HS350 WS260 IR260 PU10734EJ01V0DS PC3225 transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j

    transistor marking c3n

    Abstract: PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.


    Original     		PDF UPC3226TB PC3226TB transistor marking c3n PC2710TB UPC3226TB C3J marking upc3225tb marking c1d marking c3j

    PC2710TB

    Abstract: transistor marking c3n C3J marking UPC3226 marking c1d UPC3223TB marking c3j
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.


    Original     		PDF PC3226TB PC3226TB PC2710TB transistor marking c3n C3J marking UPC3226 marking c1d UPC3223TB marking c3j

    MMBT3906

    Abstract: MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F
    Text: MMBT3906 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available MMBT3904 Ideal for Medium Power Amplification and Switching Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF MMBT3906 MMBT3904) AEC-Q101 J-STD-020 MIL-STD-202, DS30059 MMBT3906 MMBT3906Q-7-F transistor marking c3n K3N diodes npn k3n MMBT3906Q MMBT3906-13-F

    RO4003C

    Abstract: S11F PC2710TB C3J marking UPC3223TB marking c3j marking c3s
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.


    Original     		PDF PC3232TB PC3232TB RO4003C S11F PC2710TB C3J marking UPC3223TB marking c3j marking c3s

    6 GHZ nec

    Abstract: PC2710TB transistor marking c3n C3J marking 8125 marking c3j
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.


    Original     		PDF PC3232TB PC3232TB PU10597EJ01V0DS 6 GHZ nec PC2710TB transistor marking c3n C3J marking 8125 marking c3j

    PC2710TB

    Abstract: marking c3j
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    PC2710TB

    Abstract: marking c3j
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF PU10597EJ01V0DS PC3232TB PC2710TB marking c3j

    mark 303 SOT-23

    Abstract: c3nn C4NN
    Text: TC1270A/71A Voltage Supervisor with Manual Reset Input Package Types SOT-143 SOT-143 1 RST 2 4 VDD VSS 1 3 MR 2 RST 2 MR 3 5 4 VDD 3 MR VSS RST NC 1 VDD 2 MR 3 TC1271A VDD TC1270A 1 4 SOT-23-5 SOT-23-5 NC TC1271A VSS TC1270A • Precision voltage monitor - 2.63V, 2.93V, 3.08V, 4.38V and 4.63V trip


    Original     		PDF TC1270A/71A TC1270, TC1271 TCM811, TCM812 OT-143 OT-23 VS-3-572-9526 DS22035A-page mark 303 SOT-23 c3nn C4NN

    marking c3j

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


    Original     		PDF PC3236TK PC3236TK marking c3j

    PC2710TB

    Abstract: ro4003 PC3223TB marking c3j
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


    Original     		PDF PC3236TK PC3236TK PC2710TB ro4003 PC3223TB marking c3j

    S1F76600

    Abstract: 220v generator power booster epson lq 2180 TDK cd 471k capacitor NEC 2501 re 443 FL9H FL9H 330 H FL9H 330uH HP054S HP035
    Text: MF302-11 S1F70000 Series Technical Manual IEEE1394 POWER SUPPLY Controller IC S1R77801F00A S1F70000 Series Technical Manual S1F70000 Series Technical Manual ELECTRONIC DEVICES MARKETING DIVISION EPSON Electronic Devices Website http://www.epson.co.jp/device/


    Original     		PDF MF302-11 S1F70000 IEEE1394 S1R77801F00A HD44103 S1F76600 220v generator power booster epson lq 2180 TDK cd 471k capacitor NEC 2501 re 443 FL9H FL9H 330 H FL9H 330uH HP054S HP035

    2SK2996

    Abstract: transistor 1127
    Text: TOSHIBA 2SK2996 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2996 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • •


    OCR Scan     		PDF 2SK2996 20kil) --10A, 2SK2996 transistor 1127

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Em itter Voltage


    OCR Scan     		PDF HN3C09F N3C09F transistor marking c3n

    transistor marking c3n

    Abstract: c3n transistor
    Text: TOSHIBA HN3C12F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN 3 • ■ ■ 'm V r1 1 F ■ U nit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF HN3C12F transistor marking c3n c3n transistor

    transistor HD marking

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN3C14F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 • ■ 'm ■ m tr r1AF ■ ■ ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14F transistor HD marking

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE HN3 • ■ ■ r13F SILICON NPN EPITAXIAL PLANAR TYPE 'm m tr ■ w ■ V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C13F

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA HN3C14FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 A F 11 • ■ u 'm mm V H F- U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 U ltra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C14FU transistor marking c3n

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA HN3C10F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 r 1 HF • ■ 'm ■ mmr ■ U nit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN3C10F transistor marking c3n

    transistor marking c3n

    Abstract: No abstract text available
    Text: TO SH IB A HN2C10FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M 9 f 1 fi F 11 • ■ ■ w u 'm ■ VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF HN2C10FU transistor marking c3n

    2C11FU

    Abstract: No abstract text available
    Text: TOSHIBA H N 2C 11 FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN7ri1Fll • ■ u 'm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.7dB f=2G H z H igh Gain : Gain = lld B (f= 2 G H z ) MAXIMUM RATINGS (Ta = 25°C) SYM BOL CHARACTERISTIC


    OCR Scan     		PDF 2SC5262 transistor marking c3n