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    TRANSISTOR MARKING CODE 012 Search Results

    TRANSISTOR MARKING CODE 012 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE 012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF BFT93 Q62702-F1063 OT-23 235b05 G122211 900MHz 235fc

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS 17W NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA BFS 17W MCs 1= B Q62702-F1645 Package O Pin Configuration II CO Marking Ordering Code LU II C\J Type SOT-323 Maximum Ratings of any single Transistor


    OCR Scan     		PDF Q62702-F1645 OT-323 D1521L5 fl235LD5 A235b05 01521b?

    BC 170 transistor

    Abstract: No abstract text available
    Text: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 17-16W BC807W, BC808W OT-323 Q62702-C2321 18-16W Q62702-Ã 18-25W Q62702-C2323 18-40W BC 170 transistor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration


    OCR Scan     		PDF Q62702-F1062 OT-23 BFT92 H35bD5 900MHz

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611


    OCR Scan     		PDF Q62702-F1611 OT-143 0535bOS 900MHz fl235b05

    SIEMENS BST 68

    Abstract: SIEMENS BST 68 L
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1577 OT-343 H35b05 BFP193W fl53SbOS SIEMENS BST 68 SIEMENS BST 68 L

    transistor bc 577

    Abstract: transistor bc 103
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code


    OCR Scan     		PDF Q62702-2372 OT-363 flE35bDS BC847S EHP00365 fl235b05 transistor bc 577 transistor bc 103

    marking bt5

    Abstract: No abstract text available
    Text: BCR 148S SIEMENS NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvaniv internal isolated Transistors driver circuit • Built in bias resistor (R1=47kiì, R2=47Kfl) 02 fi Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 47Kfl) Q62702-C2417 BCR148S r998-11-01 6235bQ5 01207bb 0E35b05 marking bt5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF BFP181R 900MHz Q62702-F1685 OT-143R 235fc

    012n3

    Abstract: No abstract text available
    Text: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF BFP193 900MHz Q62702-F1282 OT-143 012n3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 148W NPN Silicon Digital Transistor • Switching circuit, ¡nverter, interface circuit, driver circuit ' Built in bias resistor Ri=47kiì, R2=47kQ Pin Configuration Q62702-C2291 1= B Package LU II CVÍ II Ordering Code WEs O Marking BCR 148W


    OCR Scan     		PDF Q62702-C2291 OT-323 Therma148W 235L05 0235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type


    OCR Scan     		PDF 47kfl) OT-323 235b05 BCR158W a53SbOS D1BD77B fiS35bD5

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II


    OCR Scan     		PDF 47kfl) Q62702-C2275 OT-323 fl235bG5 0E35b05 0120bfi3

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP00770 EHP00772 S35bOÂ 01EES4S A235b05 012254b

    MARKING CODE T7s

    Abstract: MARKINGCODET7s
    Text: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E


    OCR Scan     		PDF 47kfi) OT-323 fl235b05 623St30S MARKING CODE T7s MARKINGCODET7s

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23


    OCR Scan     		PDF 47kfl, 47kfi) Q62702-C2261 OT-23 0235b05 Q12Q7b5 015D7bB

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type


    OCR Scan     		PDF 22kfl) OT-23 6235bQS D1B0634 a23St 0120B35

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 146 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=47kfl, R2=22kfl BCR 146 WLs 1 =B Q62702-C2260 Package 2=E It Pin Configuration CO Marking Ordering Code o Type


    OCR Scan     		PDF 47kfl, 22kfl) Q62702-C2260 OT-23 S35b05 012D753 fl235bG5 12075M

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 158 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor Ri=2.2ki2, R2=47k£2 □ Pin Configuration Q62702-C2338 1 =B Package II CO WIs O Marking Ordering Code BCR 158 LU II


    OCR Scan     		PDF Q62702-C2338 OT-23 300ns; D1S0773 D1HG77H fl53SbQS

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Darlington Transistor SMBT 6427 • For general amplifier applications • High collector current • High current gain Type Marking Ordering Code tape and reel PinCContigui ation 1 2 3 Package1) SMBT 6427 s1V Q68000-A8320 B SOT-23 E


    OCR Scan     		PDF Q68000-A8320 OT-23 aE35bD5 D1EE571 235bD5

    M7A transistor

    Abstract: transistor M7A Q62702-C2340
    Text: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan     		PDF Q62702-C2340 OT-23 0235bD5 235b05 fl235b05 M7A transistor transistor M7A Q62702-C2340

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kfl JZL LÜ XLs UPON INQUIRY 1 =B Package o BCR 569 Pin Configuration II CO Marking Ordering Code liJ HI II


    OCR Scan     		PDF OT-23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 116 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7k£2, R2=47k£2 n TT Ordering Code Pin Configuration WGs Q62702-C2337 1= B Package 2=E o Marking BCR 116 II CO Type


    OCR Scan     		PDF Q62702-C2337 OT-23

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BCR 133S NPN Silicon Digital Transistor Array »Switching circuit, inverter, interface circuit, driver circuit >Two galvanic internal isolated Transistors in one package >Built in bias resistors (R-|=10kA, R2=10kfl) Type BCR 133S Marking Ordering Code Pin Configuration


    OCR Scan     		PDF 10kfl) Q62702-C2376 OT-363 01S0713 fi235bD5