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    TRANSISTOR MARKING CODE 432 Search Results

    TRANSISTOR MARKING CODE 432 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING CODE 432 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


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    PDF DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK

    CD4504B-EP

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION A Correct terminal connections in figure 2. - PHN DATE APPROVED 13-01-16 Thomas M. Hess CURRENT DESIGN ACTIVITY CAGE CODE 16236 HAS CHANGED NAMES TO: DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 Prepared in accordance with ASME Y14.24


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    PDF V62/09606-01XE CD4504BMPWREP 4504BEP V62/09606 CD4504B-EP

    A434 RF MODULE

    Abstract: JESD31 TRANSISTOR SMD MARKING CODE A45 NCSL Z540.3 MIL-I-46058 part marking b36 smd diode tm-1017 B568 solar water pumping machine control schematic JEDEC JESD31
    Text: DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER, COLUMBUS POST OFFICE BOX 3990 COLUMBUS, OH 43218-3990 IN REPLY REFER TO DSCC-VAC 20 April, 2010 MEMORANDUM FOR MILITARY/INDUSTRY DISTRIBUTION SUBJECT: Initial Draft of MIL-PRF-38535 Revision J: Project Number 5962-2010-006


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    PDF MIL-PRF-38535 MIL-PRF-38535J RD-650) A434 RF MODULE JESD31 TRANSISTOR SMD MARKING CODE A45 NCSL Z540.3 MIL-I-46058 part marking b36 smd diode tm-1017 B568 solar water pumping machine control schematic JEDEC JESD31

    "Voltage Detector IC"

    Abstract: NEC TRANSISTOR MARKING CODE 2SB1115 transistor 847 2SA1242 2SB1114 2SB1302 2SB624 2SB799 nec 022
    Text: TK73200 ADJUSTABLE LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability with External PNP Transistor ■ Internal Short Circuit Protection ■ Excellent Load Regulation ■ CMOS/TTL-Compatible On/Off Switch ■ Internal Reverse Bias Current Protection Switch


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    PDF TK73200 TK73200 control8-2375 IC-xxx-TK732xx 0798O0 "Voltage Detector IC" NEC TRANSISTOR MARKING CODE 2SB1115 transistor 847 2SA1242 2SB1114 2SB1302 2SB624 2SB799 nec 022

    MOTOROLA DATE CODE transistor

    Abstract: motorola surface mount marking code MSB709-RTI marking code motorola ic 318D-03 MSB709 MSB709-RT1 MSB709-ST1 marking code ER transistor
    Text: Order this dats sheet by MSB709-RTl/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSB709-RTI* PNP Silicon General Purpose Amplifier Transistor MSB709=STI This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-59 package which is designed for low power


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    PDF MSB709-RTl/D MSB709-RTI* MSB709 SC-59 inch/3000 inch/10 318D-03, MK145BP, MOTOROLA DATE CODE transistor motorola surface mount marking code MSB709-RTI marking code motorola ic 318D-03 MSB709-RT1 MSB709-ST1 marking code ER transistor

    nec 3435 transistor

    Abstract: 11-365 MARKING toshiba 133 2SB1114 2SB1115 2SB1302 2SB624 2SB799 2SB970 TK73241MCLH
    Text: TK732xx LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability With External PNP Transistor ■ Internal Short Circuit Protection ■ Excellent Load Regulation ■ CMOS/TTL-Compatible On/Off Switch ■ Internal Reverse Bias Current Protection Switch


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    PDF TK732xx IC-xxx-TK732xx 0798O0 nec 3435 transistor 11-365 MARKING toshiba 133 2SB1114 2SB1115 2SB1302 2SB624 2SB799 2SB970 TK73241MCLH

    marking code motorola ic

    Abstract: CQX 88 MSB71O-QTI 318D-03 MSB71O-RT1
    Text: Order this data sheet by MSB71 O-QTl/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-59 package which is designed for low power


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    PDF MSB71 SC-59 inch/3000 MK145BP, MSB71O-QTI marking code motorola ic CQX 88 MSB71O-QTI 318D-03 MSB71O-RT1

    ON Semiconductor marking

    Abstract: motorola ZENER diode marking code motorola transistor dpak marking motorola diode marking code On semiconductor date Code dpak YEAR A on semiconductor marking code dpack MARKING ON Semiconductor to220 transistor marking MOTOROLA sot-223 MARKING ON SEMI MOTOROLA DATE CODE transistor
    Text: 504 BRD8008/D Rev. 0, Mar-2000 ON Semiconductor Part Marking Transition Brochure ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


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    PDF BRD8008/D Mar-2000 r14525 ON Semiconductor marking motorola ZENER diode marking code motorola transistor dpak marking motorola diode marking code On semiconductor date Code dpak YEAR A on semiconductor marking code dpack MARKING ON Semiconductor to220 transistor marking MOTOROLA sot-223 MARKING ON SEMI MOTOROLA DATE CODE transistor

    tag 8833

    Abstract: IC LM 393 N LM 352 voltage regulator Ic 13,56 MHz RFID antenna receiver of rfid tag Bi-phase-L Coding IC LM 393 N pin details 125 kHz RFID tag antenna power supply of uv curing lamp RF inductor 13.56 MHz
    Text: MCRF355 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • • • • • • • Package Type Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer


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    PDF MCRF355 DS21287G-page tag 8833 IC LM 393 N LM 352 voltage regulator Ic 13,56 MHz RFID antenna receiver of rfid tag Bi-phase-L Coding IC LM 393 N pin details 125 kHz RFID tag antenna power supply of uv curing lamp RF inductor 13.56 MHz

    TOKO INDUCTORS

    Abstract: TK11830 Toko inductor D73C TK11830M
    Text: TK11830 POSITIVE-TO-NEGATIVE DC-DC CONVERTER FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Positive-to-Negative Converter Adjustable Output Voltage On/Off Control Thermal Protection Sensor Broad Operating Voltage Range Miniature Package SOT-23L


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    PDF TK11830 OT-23L) TK11830 IC-140-TK11830 0798O0 TOKO INDUCTORS Toko inductor D73C TK11830M

    MCRF355

    Abstract: DS21311 AN707 RFID Bi-phase-L Coding DS00710 MCRF360 AN707 up/AN707 RFID AN830 TB031
    Text: MCRF355/360 13.56 MHz Passive RFID Device with Anti-Collision Feature Features • • • • • • • Carrier frequency: 13.56 MHz Data modulation frequency: 70 kHz Manchester coding protocol 154 bits of user memory On-board 100 ms SLEEP timer Built-in anti-collision algorithm for reading up to


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    PDF MCRF355/360 MCRF360) D-85737 DS21287F-page MCRF355 DS21311 AN707 RFID Bi-phase-L Coding DS00710 MCRF360 AN707 up/AN707 RFID AN830 TB031

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906Z -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-923 Collector current capability IC= -200mA Collector-emitter voltage VCEO= -40V.


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    PDF MMBT3906Z OT-923 -200mA -10mAdc, -10mAdc 21-Aug-2012

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904Z 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-923 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION


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    PDF MMBT3904Z OT-923 200mA 10mAdc, 10mAdc 21-Aug-2012

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Add device type 02 and case outline Y. - ro 13-02-14 C. SAFFLE B Make correction to ENBL pin and IN pin input voltage, delete -5 V and substitute -0.3 V as specified under paragraph 1.3. Delete power dissipation limit entirely from paragraph 1.3. - ro


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    PDF 27322M UCC27322MDEP V62/11601

    marking sSH sot-23

    Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
    Text: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information


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    PDF OT-23 Q67000-S007 E6327 OT-23 GPS05557 marking sSH sot-23 MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens

    433 SOT23

    Abstract: No abstract text available
    Text: Centrar CMPTA29 Semiconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA29 is an NPN silicon darlington transistor manufac­ tured by the epitaxial planar process, epoxy molded in a surface mount package, designed


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    PDF CMPTA29 OT-23 CP257 26-September OT-23 433 SOT23

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    TRANSISTOR SMD MARKING 2 HA

    Abstract: TRANSISTOR SMD MARKING CODE A1 SMD transistor code AL smd "code rc" transistor TRANSISTOR SMD MARKING CODE ce smd transistor marking HA TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE LE TRANSISTOR SMD MARKING CODE al smd marking code KN
    Text: Philips Semiconductors Product specification NPN switching double transistor PMBT3904D FEATURES PINNING • Low current max. 100 mA PIN DESCRIPTION • Low voltage (max. 40 V) 1 ,4 emitter TR1; TR2 • Reduces number of components and board space. 2, 5 base


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    PDF PMBT3904D SC-74, PMBT3904D MAM432 SC-74) 500HA. 450HA. 400HA. 350HA. 250jiA. TRANSISTOR SMD MARKING 2 HA TRANSISTOR SMD MARKING CODE A1 SMD transistor code AL smd "code rc" transistor TRANSISTOR SMD MARKING CODE ce smd transistor marking HA TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE LE TRANSISTOR SMD MARKING CODE al smd marking code KN

    BCw610

    Abstract: transistor marking code 431 BCW61B
    Text: Philips Semiconductors Product specification PNP general purpose transistors BCW61 series PINNING FEATURES • Low current max. 100 mA PIN • Low voltage (max. 32 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification.


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    PDF BCW61 BCW60. BCW61A BCW61B BCW61C BCW610 8CW61C BCw610 transistor marking code 431

    MOTOROLA DATE CODE transistor

    Abstract: MSC2295–BT1
    Text: MOTOROLA SC XSTRS/R F 4bE J> • b3b?2S4 00^3721 2 H f l O T ±T ~ 3H £ Order this data sheet by MSC2295-BT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSC2295-BT1 MSC2295-CT1 NPN Silicon RF Amplifier Transistor M o to r o la p r e f e r r e d d e v ic e s


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    PDF MSC2295-BT1/D MSC2295-BT1 MSC2295-CT1 SC-59 MOTOROLA DATE CODE transistor MSC2295–BT1

    marking 557 SOT143

    Abstract: No abstract text available
    Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor


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    PDF BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143

    IMX1 X1

    Abstract: MARKING CODE 3fi UMX1N X1
    Text: UMX1N IMX1 Transistor, dual, NPN Features • available in UMT6 UM6 and SMT6 (IMD, SC-74) packages Dimensions (Units : mm) • package marking: UMX1N and IMX1 ; X1 • package contains two independent NPN transistors (2SC2412K) • same size as UMT3 (UMT, SC-70)


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    PDF SC-74) 2SC2412K) SC-70) SC-59) IMX1 X1 MARKING CODE 3fi UMX1N X1

    smd transistor marking 2J

    Abstract: TRANSISTOR SMD MARKING CODE 2b TRANSISTOR SMD MARKING CODE 1d smd code LY smd transistor marking ly SMD transistor MARKING CODE 2B qml-38535
    Text: R E V IS IO N S LTR DESCRIPTION DATE APPROVED YR-M O-DA REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING REV SHEET 10 AMSCN/A 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 Tuan Nguyen CHECKED BY Larry Shaw


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    PDF 5962-E309-97 D3D17D smd transistor marking 2J TRANSISTOR SMD MARKING CODE 2b TRANSISTOR SMD MARKING CODE 1d smd code LY smd transistor marking ly SMD transistor MARKING CODE 2B qml-38535

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc