CSG3001-18A04
Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Text: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power
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400F415
460F460
500F500
630F415
730F460
800F500
570F575
630F660
870F575
1000F660
CSG3001-18A04
thyristor BBC
thyristor aeg
BBC DSDI 35
WG15013B8C
WG9017
abb sami star
SM18CXC805
sm13cxc174
CSG2001-18A04
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phototransistor 650 nm
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
phototransistor 650 nm
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transistor d-331
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
transistor d-331
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led fototransistor
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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Q65110A2741
led fototransistor
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Untitled
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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fototransistor led
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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phototransistor 650 nm
Abstract: phototransistor peak 550 nm
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
2006-0y
phototransistor 650 nm
phototransistor peak 550 nm
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Untitled
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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Untitled
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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Q65110A2741
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SFH7250
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszenzdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor Lead (Pb) Free Product - RoHS Compliant SFH 7221 Not for new design Replacement: SFH7250 Wesentliche Merkmale Features • SMT-Gehäuse mit IR-Sender (880 nm) und
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SFH7250
Q65110A2741
SFH7250
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Untitled
Abstract: No abstract text available
Text: NCP120 150mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP120 is a 150 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to
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NCP120
150mA,
NCP120
711AT
NCP120/D
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phototransistor 650 nm
Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features
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Q62702-P1634
OHF01924
GPL06924
phototransistor 650 nm
Q62702-P1634
fototransistor led
c 331 transistor
transistor d 331
331 transistor
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Q62702-P1819
Abstract: 0083CA
Text: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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GPLY6965
Q62702-P1819
0083CA
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Q62702-P1819
Abstract: No abstract text available
Text: GaAlAs-IR-Lumineszensdiode 880 nm und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Vorläufige Daten / Preliminary Data Wesentliche Merkmale • SMT-Gehäuse mit IR-Sender (880 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung
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OHF00312
GPL06965
Q62702-P1819
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Untitled
Abstract: No abstract text available
Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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Q62702-P5250
suita10
GEOY6976
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IC 3130
Abstract: Q62702-P5250 of ic 3130 SFH3130F GEO06976 4110 opto
Text: Fotodarlington Transistor im Sidelooker-Gehäuse Photodarlington Transistor in Sidelooker-Package SFH 3130 F Vorläufige Daten / Preliminary Data Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 840 nm bis 1080 nm • Enge Empfangscharakteristik
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E00386
OHF00383
GEO06976
IC 3130
Q62702-P5250
of ic 3130
SFH3130F
GEO06976
4110 opto
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LBN150B01-7
Abstract: MMST3904 MMST3906 rce marking
Text: LBN150B01 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUCT General Description • LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of
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LBN150B01
LMN150B01
DS30749
LBN150B01-7
MMST3904
MMST3906
rce marking
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transistor h 331
Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features
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331-JK
Q62702-P1634
GPLY6924
transistor h 331
c 331 transistor
331 transistor
switching transistor 331
phototransistor 650 nm
transistor 331
d 331 Transistor
Q62702-P1634
phototransistor 550 nm
phototransistor peak 550 nm
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DS30749
Abstract: MMST3904 MMST3906 32GZ
Text: LBN150B01 Lead-free Green 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS NEW PRODUCT General Description • LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of
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LBN150B01
LMN150B01
OT-26
DS30749
MMST3904
MMST3906
32GZ
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Untitled
Abstract: No abstract text available
Text: NCP130 300mA, Very Low Dropout Bias Rail CMOS Voltage Regulator The NCP130 is a 300 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage VBIAS . The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to
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NCP130
300mA,
NCP130
711AT
NCP130/D
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LBN150B01-7
Abstract: No abstract text available
Text: LBN150B01 150 mA LOAD SWITCH FEATURING COMPLEMENTARY BIPOLAR TRANSISTORS Please click here to visit our online spice models database. NEW PRODUCT General Description • LMN150B01 is best suited for applications where the load needs to be turned on and off using control circuits like
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LBN150B01
LMN150B01
DS30749
LBN150B01-7
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ lk f l, R2=1kfl Ordering Code Pin Configuration XXs UPON INQUIRY 1= B Package II CO O Marking BCR 571 LU II
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OT-23
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2SA amplifier
Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Text: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K
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2SA1514K
2SA1579
SC-59)
SC-70)
2SA1579;
-120V
2SC3906K
2SC4102
2SA1514K
2SA amplifier
H1000I
2SA1579
2SC4102
transistor 2SA
transistor PNP
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transistor b1412
Abstract: 2SB1412F5 b1412
Text: 2SB1412F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1412-*Q, where ★ is hFE code and □ is lot number low collector saturation voltage, typically VCE(sat) = -0.35 V for lC/lB = -4 A/-0.1 A
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2SB1412F5
SC-63)
B1412-
2SB1412F5
transistor b1412
b1412
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