Q62702-C2445
Abstract: No abstract text available
Text: BCR 512 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drive circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 512 XFs 1=B Q62702-C2445 Package 2=E 3=C SOT-23 Maximum Ratings
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Q62702-C2445
OT-23
Nov-27-1996
Q62702-C2445
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR512 XFs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR512
VPS05161
EHA07184
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23
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BCR512
EHA07184
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PDF
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7 kΩ, R 2= 4.7 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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Original
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BCR512
EHA07184
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PDF
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23
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Original
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BCR512
EHA07184
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PDF
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2= 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23
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Original
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BCR512
EHA07184
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PDF
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7kΩ, R2= 4.7kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR512
EHA07184
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BCR512
Abstract: BCW66
Text: BCR512 NPN Silicon Digital Transistor • Built in bias resistor R1= 4.7 kΩ, R2 = 4.7 kΩ 2 3 • Pb-free (RoHS compliant) package 1) 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package
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BCR512
EHA07184
BCR512
BCW66
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TRANSISTOR marking ar code
Abstract: AN1001 AN-994 IRF730A IRL3103L
Text: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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PD-95114
IRF730AS/LPbF
AN1001)
O-262
IRF730A
AN-994.
TRANSISTOR marking ar code
AN1001
AN-994
IRL3103L
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AN-994
Abstract: IRF740A 12V 10A SMPS 6-0A36 IRF740AS
Text: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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IRF740AS/LPbF
O-262
IRF740A
AN-994.
AN-994
12V 10A SMPS
6-0A36
IRF740AS
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Intersil
Abstract: MOSFET TRANSISTOR SMD MARKING CODE ZA TSMC 0.13um process specification transistor smd marking za sot-23
Text: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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JM38510/
1-888-INTERSIL
Intersil
MOSFET TRANSISTOR SMD MARKING CODE ZA
TSMC 0.13um process specification
transistor smd marking za sot-23
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TRANSISTOR 185
Abstract: flyback xfmr AN1001 AN-994 IRF730A IRL3103L
Text: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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Original
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PD-95114
IRF730AS/LPbF
AN1001)
O-262
12-Mar-07
TRANSISTOR 185
flyback xfmr
AN1001
AN-994
IRF730A
IRL3103L
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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Original
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PD-95114
IRF730AS/LPbF
AN1001)
O-262
08-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: DAC161S997 www.ti.com SNAS621 – JUNE 2013 16-bit SPI Programmable DAC for 4-20mA Loops Check for Samples: DAC161S997 FEATURES DESCRIPTION • • • • • • • • The DAC161S997 is a very low power 16-bit ΣΔ digital-to-analog converter DAC for transmitting an
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DAC161S997
SNAS621
16-bit
4-20mA
DAC161S997
16-bit
420mA
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AN-994
Abstract: IRF740A
Text: PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic
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Original
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IRF740AS/LPbF
O-262
12-Mar-07
AN-994
IRF740A
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit »Built in bias resistor R1=4.7kiî, R2=4.7kfi Type Marking Ordering Code Pin Configuration BCR 512 XFs 1= B Q62702-C2445 Package 2=E 3=C SOT-23
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OCR Scan
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Q62702-C2445
OT-23
300ns;
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23
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OCR Scan
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Q62702-C2445
OT-23
023SbD5
G120a
015D677
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c 2579 power transistor
Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Text: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage
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OCR Scan
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JEDECTO126
15A3DIN
c 2579 power transistor
TRANSISTOR C 2577
transistor Bc 542
c 2579 transistor
marking EB 202 transistor
transistor bc 564
C 2577 transistor
AE 2576
PM564
Transistors marking WZ
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PDF
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sot-23 marking code Ks
Abstract: TRANSISTOR MARKING CODE XF LDO marking code AL
Text: ANALO G ► D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting
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OCR Scan
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OT-23-5
ADP3309
ADP3309
OT-23)
sot-23 marking code Ks
TRANSISTOR MARKING CODE XF
LDO marking code AL
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Untitled
Abstract: No abstract text available
Text: ANALO G D E V IC E S FEATURES ± 1.2% Accuracy Over Line and Load Regulations @ 25°C U ltralo w Dropout Voltage: 80 m V Typical @ 50 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting
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OCR Scan
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OT-23-5
ADP3308
MJE253*
OT-23)
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PDF
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Transistor TT 2140
Abstract: lithium ion battery charger
Text: rSJTOKO TK732xx LOW DROPOUT REGULATOR FEATURES APPLICATIONS • Up to 5 A Output Current Capability With External PNP Transistor Battery Powered Systems Cellular Telephones ■ Internal Short Circuit Protection Cordless Telephones ■ Excellent Load Regulation
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OCR Scan
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TK732xx
TK732xx
1998TokOi
xx-TK732xx
Transistor TT 2140
lithium ion battery charger
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PDF
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Untitled
Abstract: No abstract text available
Text: ANALOG D E V IC E S FEATURES ±1.2% Accuracy Over Line and Load Regulations @ +25°C U ltralo w Dropout Voltage: 120 m V Typical @ 100 mA Requires Only C0 = 0.47 |xF for Stability anyCAP = Stable w ith All Types of Capacitors Including MLCC Current and Therm al Limiting
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OCR Scan
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OT-23-5
ADP3309
2N3906
OT-23)
h\000v
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PDF
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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OCR Scan
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