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    TRANSISTOR MARKING DM Search Results

    TRANSISTOR MARKING DM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8672601EA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) Visit Rochester Electronics LLC Buy
    54F350/BEA Rochester Electronics LLC 54F350 - Shifter, F/FAST Series, 4-Bit, TTL, CDIP16 - Dual marked (5962-8607501EA) Visit Rochester Electronics LLC Buy
    5962-8672601FA Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/B2A Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) Visit Rochester Electronics LLC Buy

    TRANSISTOR MARKING DM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BSS84 MARKING CODE

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd
    Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 05 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.


    Original     		BSS84 O-236AB BSS84/DG BSS84 MARKING CODE TRANSISTOR SMD CODE PACKAGE SOT23 NXP SMD TRANSISTOR MARKING CODE smd code marking WV TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84 Equivalent BSS84 marking code e1 smd PDF

    SMD transistor code NC

    Abstract: DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code
    Text: SMD Signal DMOS Transistor N-Channel 2N7002 SMD Signal DMOS Transistor (N-Channel) Features • • • • • Voltage Controlled Small Signal Switch High Density Cell Design for Low RDS(ON) Rugged and Reliable High Saturation Current Capablity RoHS Compliance


    Original     		2N7002 OT-23, OT-23 MIL-STD-202G, SMD transistor code NC DIODE smd marking CODE WA TRANSISTOR SMD MARKING CODE transistor SMD MARKING CODE nx smd marking NX transistor smd code marking nc 2n7002 smd SMD Transistor nc TRANSISTOR SMD MARKING CODE PD smd diode 2n7002 marking code PDF

    bss84

    Abstract: TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84.215
    Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.


    Original     		BSS84 BSS84 BSS84/DG O-236AB 771-BSS84-T/R TRANSISTOR SMD MARKING CODE A1 marking code DG SMD Transistor BSS84.215 PDF

    BSS84

    Abstract: BSS84 nxp TRANSISTOR SMD MARKING CODES BSS84 marking marking code DG SMD Transistor bss84 e-6327
    Text: BSS84 P-channel enhancement mode vertical DMOS transistor Rev. 06 — 16 December 2008 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode vertical Diffusion Metal-Oxide Semiconductor DMOS transistor in a small Surface-Mounted Device (SMD) plastic package.


    Original     		BSS84 O-236AB BSS84/DG BSS84 BSS84 nxp TRANSISTOR SMD MARKING CODES BSS84 marking marking code DG SMD Transistor bss84 e-6327 PDF

    10 marking code dual transistor

    Abstract: CMLDM7003TG ctg marking code
    Text: CMLDM7003TG Central TM Semiconductor Corp. SURFACE MOUNT PICOminiTM DUAL N-CHANNEL SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7003TG is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver


    Original     		CMLDM7003TG OT-563 200mA 115mA CMLDM7003TG 13-September 10 marking code dual transistor ctg marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: f Z T S G S - T H O Ä T# is M S O N S03904 U i C T lt g « ! SMALL SIGNAL NPN TRANSISTOR Type Marking S03904 071 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GENERAL PURPO SE AMPLIFIER AND


    OCR Scan     		S03904 S03904 OT-23 SC06960 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor • BFQ 69 For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		Q62702-F780 fl235fc BFQ69 DDb71D3 PDF

    up/xr+2320

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold metallization ensures excellent reliability. BFG93AW/X R9 BFG93AW/XR


    OCR Scan     		BFG93AW BFG93AW/X; BFG93AW/XR BFG93AW/X OT343 OT343R MSB014 up/xr+2320 PDF

    BFq69

    Abstract: BFQ 58 ts102
    Text: SIEMENS NPN Silicon RF Transistor BFQ 69 • For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		Q62702-F780 BFQ69 EHT07562 EHT07561 EHTQ7564 BFq69 BFQ 58 ts102 PDF

    SL 100 NPN Transistor

    Abstract: n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector BFG590 RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor
    Text: Philips Semiconductors Product specification BFG590; BFG590/X; BFG590/XR NPN 5 GHz wideband transistor FEATURES MARKING • High power gain TYPE NUMBER • Low noise figure BFG590 N38 • High transition frequency BFG590/X N44 • Gold metallization ensures


    OCR Scan     		BFG590; BFG590/X; BFG590/XR OT143 OT143R BFG590 BFG590/X BFG590/XR BFG590 711DflSb SL 100 NPN Transistor n38 transistor 100 n38 transistor base pin 4 pin dual-emitter SL 100 NPN Transistor base emitter collector RF TRANSISTOR 2.5 GHZ s parameter sot143r transistor PDF

    BFG92AW

    Abstract: transistor marking P8
    Text: Product specification Philips Semiconductors BFG92AW BFG92AW/X; BFG92AW/XR NPN 6 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG92AW P8 • Gold metallization ensures excellent reliability. BFG92AW/X P9 BFG92AW/XR


    OCR Scan     		BFG92AW BFG92AW/X; BFG92AW/XR OT343 OT343R BFG92AW/X BFG92AW/XR BFG92AW BFG92AW/X transistor marking P8 PDF

    TRANSISTOR L 287 A

    Abstract: 2SD2170 CE marking code diode sc-62
    Text: 2SD2170 Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2170; DM-*, where ★ is hFE code • built-in 90 J ” V Zener diode between collector and base • low fluctuation of Zener voltage


    OCR Scan     		2SD2170 OT-89, SC-62) 2SD2170; Para10 2SD2170 2SD2170, TRANSISTOR L 287 A CE marking code diode sc-62 PDF

    din 3141

    Abstract: No abstract text available
    Text: TEMIC BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Electrostatic sensitive device. Observe precautions for handling. ^ Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50


    OCR Scan     		BFW92A BFW92A D-74025 31-Oct-97 din 3141 PDF

    BFS55A

    Abstract: Bfs 60 60dBi transistor b54
    Text: SIEMENS BFS 55A NPN Silicon RF Transistor • For low-distortion broadband amplifiers up 1 at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFS 55A BFS 55A Q62702-F454


    OCR Scan     		Q62702-F454 0Db7431 EHT08056 EHT03057 235fc BFS55A Bfs 60 60dBi transistor b54 PDF

    Untitled

    Abstract: No abstract text available
    Text: T e m ic S 897 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications High gain linear broadband RF amplifier. Features • • Small feedback capacitance Low noise figure • Low cross modulation Dimensions in mm i aoa • Marking: 897


    OCR Scan     		PDF

    D2318

    Abstract: No abstract text available
    Text: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2318*Q, where ★ is hFE code and □ is lot number high DC current amplification, typically hFE = 1000 • low collector saturation voltage,


    OCR Scan     		2SD2318F5 SC-63) D2318 2SD2318F5 PDF

    BFQ64

    Abstract: VPS05162 MARKING 7A SOT89
    Text: SIEMENS NPN Silicon RF Transistor BFQ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 mA to 150 mA. Type Marking Ordering Code tape and reel BFQ 64 FC Q62702-F1061 Pin Configuration 1


    OCR Scan     		vps05162 Q62702-F1061 OT-89 B35bOS BFQ64 fl235Li05 b71DQ BFQ64 VPS05162 MARKING 7A SOT89 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. BFS 17P MCs 1 =B Q62702-F940 II Pin Configuration CM Marking Ordering Code Package LU Type 3=C


    OCR Scan     		BFS17P Q62702-F940 OT-23 0535b05 fi235b05 500MHz flE35b05 PDF

    CD 1691 CB

    Abstract: CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559
    Text: NPN Silicon RF Transistor BFR 193 • For low-noise, high-gain am plifiers up to 2 GHz • For linear broadband amplifiers. • fT = 8 GHz. F = 1.2 d B at 800 MHz. B ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type Marking


    OCR Scan     		F1218 OT-23 CD 1691 CB CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559 PDF

    sot-23 MARKING CODE ZA

    Abstract: sot-23 CODE 41 bfs17p mc
    Text: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		BFS17P OT-23 sot-23 MARKING CODE ZA sot-23 CODE 41 bfs17p mc PDF

    2SC5053

    Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
    Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate


    OCR Scan     		2SC5053 SC-62) 2SC5053; 2SA1900 2SC5053 bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING PDF

    TELEFUNKEN* U 413 B

    Abstract: MAR 641 TRANSISTOR transistor MAR 439
    Text: T emic BFR96T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications RF-araplifier up to GHz range specially for wide band an­ tenna amplifier. Features • High power gain • Low noise figure • High transition frequency BFR96T Marking: BFR96T


    OCR Scan     		BFR96T BFR96T 26-Mar-97 TELEFUNKEN* U 413 B MAR 641 TRANSISTOR transistor MAR 439 PDF

    transistor Bf 966

    Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
    Text: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


    OCR Scan     		00052b2 IAL66 ft-11 569-GS 000s154 hal66 if-11 transistor Bf 966 LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET PDF

    transistor k 3562

    Abstract: transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF
    Text: TELEFUNKEN ELECTRONIC ¥ilLilFO*lKl electronic 61C D • S^Dmb '7s 3 / -2 - S T ' 00052b2 0 BIAL66 BF 966 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


    OCR Scan     		00052b2 IAL66 ft-11 569-GS 000S154 HAL66 if-11 transistor k 3562 transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF PDF