Untitled
Abstract: No abstract text available
Text: PK-00065 Rev. A Page: 2/4 TITLE: AOS Packing SPEC for TO247 1 PURPOSE This specification shall serve as the basic spec for packing and labeling of the assembled AOS parts at all subcontractors. 2 SCOPE TO247 in all subcontractors. 3 REFERENCE DOCUMENT AOS Marking SPEC: MK-00001
|
Original
|
PK-00065
MK-00001
|
PDF
|
2SC5586 equivalent
Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements
|
Original
|
TM1641S-L
TM1661B-L
TM1661P-L
TM1661S-L
TM2541B-L
TM2561B-L
TM341M-L
TM341S-L
TM341S-R
TM361M-L
2SC5586 equivalent
2sc5586
2sa1694 equivalent
2SC5487
transistor 2SC5586
STR83159
em 234 stepper
SE090
SK 5154S
2SK3460 equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GTO Kondensatoren für hohe Strombelastungen GTO capacitors for high current carrying capability WIMA GTO MKP Kondensatoren sind speziell zur Bedämpfung von Spannungsspitzen an GTO-Thyristoren und IGBT entwickelte Bauelemente. Sie werden im Trockenverfahren mit einer metallisierten Polypropylenfolie gewickelt
|
Original
|
|
PDF
|
3BS transistor
Abstract: S0642
Text: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER
|
OCR Scan
|
S0692
OT-23
SC06960
S0642
OT-23
3BS transistor
S0642
|
PDF
|
transistor EKs
Abstract: transistor marking code 7C marking BSs sot23 transistor EKs 80 BCX41 marking AMs 4 pin bss 100 transistor marking BSs sot23 siemens
Text: SIEMENS NPN Silicon AF and Switching Transistor BCX 41 BSS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)
|
OCR Scan
|
Q62702-C1659
Q62702-S535
OT-23
41/BSS
BCX41
BSS64
EHP004J4
transistor EKs
transistor marking code 7C
marking BSs sot23
transistor EKs 80
marking AMs 4 pin
bss 100 transistor
marking BSs sot23 siemens
|
PDF
|
marking h3
Abstract: SC08810 od31
Text: F Z J S G S - T H O M S O N Ä 7 # Me^iLliOTSMIgS BCW89 SMALL SIGNAL PNP TRANSISTOR Type Marking BCW89 H3 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS • MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO-AMPLIFICATION AND
|
OCR Scan
|
BCW89
OT-23
SC08810
7T2TE37
OT-23
marking h3
SC08810
od31
|
PDF
|
BSP320
Abstract: No abstract text available
Text: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol
|
OCR Scan
|
OT-223
Q67000-S4001
BSP320
|
PDF
|
BFR92a MARKING P2
Abstract: MAR 641 TRANSISTOR sot-23 marking RIP ha 1452 BFR92A
Text: T em ic BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure • High transition frequency BFR92A Marking: + P2 Plastic case SOT 23
|
OCR Scan
|
BFR92A/BFR92AR
BFR92A
BFR92AR
26-Mar-97
BFR92a MARKING P2
MAR 641 TRANSISTOR
sot-23 marking RIP
ha 1452
|
PDF
|
Untitled
Abstract: No abstract text available
Text: r i 7 SGS-THOMSON ^7# e U STO «! S O A 56 SMALL SIGNAL PNP TRANSISTOR Type Marking SOA56 2GT . SILICON EPITAXIAL PLAN AR PN P T R A N S IS T O R S • MINIATURE P LA ST IC P A C K A G E FO R APPLICATION IN S U R F A C E MOUNTING CIR C U IT S . MEDIUM C U R R E N T A F AMPLIFICATION
|
OCR Scan
|
SOA56
OT-23
OT-23
|
PDF
|
transistor BUX 44
Abstract: transistor BUX BUX87 bux86 transistor BF 414
Text: A TELEFUNKEN ELECTRONIC 17E D • 0 ^ 2 0 0 % OOb'iST? ? ■ AL66 BUX 86 - BUX 87 TTIUIFy MKIM electronic Creative Tfechnotog* * T - 2 3 - D 9 Silicon NPN Power Transistors Applications: Switching mode power supply, driver circuits Features: • in multi diffusion technique
|
OCR Scan
|
15A3DI
transistor BUX 44
transistor BUX
BUX87
bux86
transistor BF 414
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D LbSBTBl 0015037 T • _ JL MAINTENANCE TYPE MKB12040WS T - 3 3 - II NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at 1,09 GHz.
|
OCR Scan
|
MKB12040WS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: _ I I N AMER PHILIPS/DISCRETE ObE D • _ bbS3T31 OD1SD41 1 MAINTENANCE TYPE MKB12140W T -3 3 -IS PULSED MICROW AVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in
|
OCR Scan
|
bbS3T31
OD1SD41
MKB12140W
|
PDF
|
MKB12100WS
Abstract: RTC 1100 RTC1100 rtc1100s 71A marking B1210 marking AFS
Text: N^^MER PHILIPS/DISCRETE ObE D bkSBTBl 001503^ 3 MAINTENANCE TYPE MKB12100WS T-3S-13 PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications.
|
OCR Scan
|
MKB12100WS
MKB12100WS
RTC 1100
RTC1100
rtc1100s
71A marking
B1210
marking AFS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N^j^riER P H IL IP S/ D IS C R ET E DtE D ^ 53*131 0 0 1 5 0 3 1 MAINTENANCE TYPE 3 MKB12100WS T-3S-I3 PULSED M ICROW AVE POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications.
|
OCR Scan
|
MKB12100WS
|
PDF
|
|
|
MKB12140W
Abstract: common base amplifier circuit designing
Text: _I I N AMER P HI LI PS/DISCRETE ObE D _ • 0015041 1 MAINTENANCE TYPE MKB12140W T - 33—iS PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended for IF F applications.
|
OCR Scan
|
S3131
MKB12140W
10/is,
common base amplifier circuit designing
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3SE D • Ö23b320 QQ1L7S1 S MKSIP y -2 1 - 3 3 NPN Silicon High Voltage Transistor BF 622 _ SIEMENS/ SPCLi S E M I C O N D S _ • Suitable for video output stages in TV sets • High breakdown voltage • Low collector-emitter saturation voltage
|
OCR Scan
|
23b320
BF622
Q62702-F568
Q62702-F1052
|
PDF
|
transistor Bc 542
Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S
Text: « I TELEFUNKEN ELECTRONIC 17E D 0 *1 2 0 0 ^ O D D ^ S * BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature
|
OCR Scan
|
T-33-0S-
JEDECTO126
transistor Bc 542
transistor bc 564
marking EB 202 transistor
transistor A 564
Transistors marking WZ
PM564
2574 transistor
transistor BF 52
SOT-23 marking aeg
883S
|
PDF
|
BFY88
Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration
|
OCR Scan
|
i200Rb
D0DS332
ft-11
569-GS
000s154
hal66
if-11
BFY88
Telefunken u 237
transistor marking code 2C
BFY 88
telefunken C80
ui77
silicon npn planar rf transistor sot 143
IMB 06 C
BFY 52 transistor
95288
|
PDF
|
transistor t2a 82
Abstract: transistor 81 110 w 85 transistor BUT 12 transistor BC 245 BUT76A transistor BF 245 MARKING NJ CODE SOT 23 TRANSISTOR BI 237 marking 712 marking va transistors
Text: TELEFUNKEN ELECTRONIC 17E D • f l ^ O O U 000^533 BUT 76 BUT 76 A TTilUliFOiMISlIMelectronic C m to* HichnotoQits T '3 3 -i3 S ilic o n NPN P o w er T ra n sisto rs Applications: Switching mode power supply, inverters, motor control and relay driver Features:
|
OCR Scan
|
T-33-/3
T0126
15A3DIN
transistor t2a 82
transistor 81 110 w 85
transistor BUT 12
transistor BC 245
BUT76A
transistor BF 245
MARKING NJ CODE SOT 23
TRANSISTOR BI 237
marking 712
marking va transistors
|
PDF
|
Transistor 4515
Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300
Text: TELEFUNKEN ELECTRONIC 0029426A E G CORP Û1C D • fl^EDGTb 000535*1 4 D \ 8ÏC 0 53 59~ CF 300 IFGlGJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;
|
OCR Scan
|
029426A
50B4DIN41867
569-GS
000s154
hal66
Transistor 4515
CF300
transistor D 4515
lm 4580
Telefunken u 237
sot-23 MARKING CODE ZA
SY 180/4
TRANSISTOR BC 414
W-25
CF-300
|
PDF
|
BF960
Abstract: t187 BF-960 BF960 TELEFUNKEN GDDS530 Telefunken u 237 BF 22 W transistor bf 237 BF 606 a0lv
Text: oc TELEFUNKEN ELECTRONIC V fllC D 6 1 2 0 0 % DDDS530 *i • ALG6 T~3i - Xjr~ ■ miSPMMEN electronic BF 960 Creative Technologies j i N-Channel Dual Gate MOS-Fieldeffect Tetrode >Depletion Mode Applications: Input- and Mixerstages especially for UHFTV-tuners up to 900 MHz
|
OCR Scan
|
GDDS530
569-GS
000S154
HAL66
BF960
t187
BF-960
BF960 TELEFUNKEN
Telefunken u 237
BF 22 W
transistor bf 237
BF 606
a0lv
|
PDF
|
lc 945 p transistor
Abstract: 362-0 transistor
Text: T em ig S852T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. mk Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features
|
OCR Scan
|
S852T
1300MHz
08-Apr-97
lc 945 p transistor
362-0 transistor
|
PDF
|
TRANSISTOR 2N338
Abstract: 2N338 2N337 SFWM marking YJ AM 2N3384 2N338 JAN zn338 2 TMT 15-4
Text: iiU M 'U 'ivuw / gva ¿2 H o v te ttr 1971 SUPERSEDING _ Û1LL.-0-lÖÖÖO/ÖWD 4 Mafflh tOM MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSBTOR, NPN, SILICON, LOW-POWER TYPES 2N337 AND 2N338 This specification la mandatory for use bv all Departmeats and Agencies of the Department of Defense.
|
OCR Scan
|
-8-19500/69K
MIL-S-19500/89D
2N337
2N338
MEL-8-19500,
MEL-S-19500
TRANSISTOR 2N338
2N338
SFWM
marking YJ AM
2N3384
2N338 JAN
zn338
2 TMT 15-4
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FMS3/FMS4/IMT4 FMW3 / FMW4 / IMX8 Transistors I General Purpose Dual Transistors FMS3 / FMS4 / IMT4 •F eatures •A bsolu te maximum ratings {TasB25‘0 1 ) Two 2SA1514K chips are housed in an SM T package. 2 ) High breakdown voltage. Parameter Col lector-base voltage
|
OCR Scan
|
TasB25
2SA1514K
T14148
94S-398-C41)
100MHz
|
PDF
|
