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    TRANSISTOR MARKING S00 Search Results

    TRANSISTOR MARKING S00 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING S00 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q67000-S007

    Abstract: E6327 marking BSs marking sSH sot-23
    Text: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information


    Original     		PDF OT-23 Q67000-S007 E6327 Q67000-S007 E6327 marking BSs marking sSH sot-23

    marking sSH sot-23

    Abstract: E6327 Q67000-S007 marking 119 marking BSs
    Text: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information


    Original     		PDF OT-23 Q67000-S007 E6327 Sep-13-1996 marking sSH sot-23 E6327 Q67000-S007 marking 119 marking BSs

    Q67000-S007

    Abstract: bss 108 E6327 SOT23 marking GF marking BSs BSS119
    Text: BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.6 .2.6 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 119 100 V 0.17 A 6Ω SOT-23 sSH Type BSS 119 Ordering Code Q67000-S007 D Tape and Reel Information


    Original     		PDF OT-23 Q67000-S007 E6327 Q67000-S007 bss 108 E6327 SOT23 marking GF marking BSs BSS119

    nitto SWT 10

    Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
    Text: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device


    Original     		PDF QSP0005 MAS1234AB3 MAS1234AB3xxxxx) 98AA2 MAS9198AA2xxxxx) nitto SWT 10 nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Type ^DS BSS 125 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 0.1 A ffDS(on) Package Marking 45 £1 TO-92 SS125


    OCR Scan     		PDF Q62702-S021 Q67000-S008 Q67000-S233 SS125 E6288 E6296 E6325

    ss125 transistor

    Abstract: ss125
    Text: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode •^GS th = 1-5 -2 .5 V Type b 0.1 A BSS 125 ^DS 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 ffDS(on) Package Marking 45 Q TO-92


    OCR Scan     		PDF SS125 Q62702-S021 Q67000-S008 Q67000-S233 E6288 E6296 E6325 ss125 transistor ss125

    marking sSH sot-23

    Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
    Text: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information


    OCR Scan     		PDF OT-23 Q67000-S007 E6327 OT-23 GPS05557 marking sSH sot-23 MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens

    ss125 transistor

    Abstract: bss125 SS125 Q67000-S008
    Text: SIEMENS BSS125 SIPMOS • Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 V Type VDS to BSS 125 600 V 0.1 A Type BSS 125 BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S505 Q62702-S021 Q67000-S008 Q67000-S233 ^DS(on) 45 Q


    OCR Scan     		PDF BSS125 SS125 Q62702-S505 Q62702-S021 Q67000-S008 Q67000-S233 E6288 E6296 E6325 ss125 transistor bss125 SS125

    siemens bss100

    Abstract: BSS100 BSS100 TO-92 BSS100 Siemens
    Text: SIEMENS BSS 100 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0 .8 .2 .0 V Type (O £ BSS 100 100 V Type BSS 100 BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S483 Q62702-S499 Q62702-S007 Q67000-S206 b


    OCR Scan     		PDF Q62702-S483 Q62702-S499 Q62702-S007 Q67000-S206 E6288 E6296 E6325 BSS100 siemens bss100 BSS100 BSS100 TO-92 BSS100 Siemens

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Text: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150

    transistor smd code marking 404

    Abstract: transistor smd code 404
    Text: BSS 119 In fin e o n technologies SIPMOS Small-Signal Transistor h • N channel i /V • Enhancement mode • ^ G S (th 2 = 1-6 .2.6 V 1 Pin 2 Pin 1 VqS BSS 119 100 V Type BSS 119 Ordering Code Q67000-S007 0.17 A Pin 3 D S G Type VPS05557 RDS(on) Package


    OCR Scan     		PDF Q67000-S007 VPS05557 OT-23 E6327 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 transistor smd code marking 404 transistor smd code 404

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS in mm Low-voltage, low-current, low-noise and high-gain • NF = 3.0 dB TYP.


    OCR Scan     		PDF 2SC3663 SC3663

    AN 7591 POWER AMPLIFIER

    Abstract: an 7591 nec d 1564
    Text: DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2 S C 3 5 8 3 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from V H F band to U H F band.


    OCR Scan     		PDF 2SC3583 MAX000 AN 7591 POWER AMPLIFIER an 7591 nec d 1564

    KST2222

    Abstract: transistor marking 551
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST2222 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST2222 QQ5S107 KST2222 transistor marking 551

    MMBT2907

    Abstract: No abstract text available
    Text: S A M S UN G SE MI CO ND UC TO R INC MMBT2907 IME 0 | 711.4142 000725? t | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 71b4142 MMBT2907 OT-23 10/uA.

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBT2907 IME 0 | 711.4142 0 0 0 7 2 5 ? t | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBT2907 OT-23

    P12152E

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT |iPC2708TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /XPC2708TB is a silicon monolithic integrated circuits designed as buffer amplifier for BS/CS tuners. This 1C


    OCR Scan     		PDF iPC2708TB /XPC2708TB PC2708T /XPC2708T. WS60-00-1 C10535E) P12152E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT |iPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /XPC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular


    OCR Scan     		PDF iPC2710TB /XPC2710TB PC2710T uPC2710T WS60-00-1 C10535E)

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. PACKAFE DIMENSIONS


    OCR Scan     		PDF 2SC3582 2SC3582 S22e-FREQUENCY

    TRANSISTOR BO 345

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.


    OCR Scan     		PDF UPC2776TB PC2776TB uPC2776TB uPC2776T PC2776T. WS60-00-1 C10535E) TRANSISTOR BO 345

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2709TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ,uPC2709TB is a silicon monolithic integrated circuits designed as 1st IF amplifier for DBS tuners. This IC is packaged in super minimold package which is sm aller than conventional minimold.


    OCR Scan     		PDF UPC2709TB uPC2709TB PC2709TB PC2709T uPC2709T VP15-00-3 WS60-00-1 C10535E)

    c2689

    Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
    Text: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n


    OCR Scan     		PDF MIL-S-19500/447 2N5926 TX2N5926 0D13flS7 MiL-S-l9500/447 5961-A340 c2689 Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx TX2N5926 transistor AS 431 tx transistor

    P12152E

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /¿PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.


    OCR Scan     		PDF uPC2710T PC2710T P12152E

    IC/CTC 1351 transistor pin detail

    Abstract: No abstract text available
    Text: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC 2 7 1 0 TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular


    OCR Scan     		PDF PC2710TB PC2710T uPC2710TB uPC2710T WS60-00-1 C10535E) P13443EJ2V0DS00 IC/CTC 1351 transistor pin detail