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    TRANSISTOR MARKING S1A Search Results

    TRANSISTOR MARKING S1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING S1A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL


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    FJX3904 SC-70 FJX3904TF PDF

    S1A MARKING CODE

    Abstract: marking code S1A sot23 H12E
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


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    SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 S1A MARKING CODE marking code S1A sot23 H12E PDF

    transistor marking s1a

    Abstract: No abstract text available
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


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    SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 transistor marking s1a PDF

    1N916

    Abstract: MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


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    SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 Feb-18-2002 1N916 MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E PDF

    power 22E

    Abstract: SMBT3906 1N916 SMBT3904
    Text: SMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type Marking SMBT3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


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    SMBT3904 100mA SMBT3906 VPS05161 Jul-11-2001 EHP00763 EHP00764 EHP00757 power 22E SMBT3906 1N916 SMBT3904 PDF

    3904

    Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
    Text: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


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    100mA VPS05161 OT-23 Oct-14-1999 EHP00763 EHP00764 EHP00757 EHP00758 3904 "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23 PDF

    3904

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration


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    Q68000-A4416 OT-23 D1EE537 0235bGS fi535fc 01EBS3T 3904 PDF

    3904 TRANSISTOR PNP

    Abstract: 3904 transistor 3904 H12E 3904 NPN 3904 SOT tr 3904 3904 transistor transistor 3904 npn datasheet transistor marking s1a
    Text: NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3906 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3904


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    Q68000-A4416 OT-23 3904 TRANSISTOR PNP 3904 transistor 3904 H12E 3904 NPN 3904 SOT tr 3904 3904 transistor transistor 3904 npn datasheet transistor marking s1a PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for


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    023b3S0 001731e T-35-11 PDF

    3904

    Abstract: tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23
    Text: SIEM EN S NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-em itter saturation voltage SMBT 3904 • Com plem entary type: SM BT 3906 PNP Type Marking Ordering Code (tape and reel) PinCContigui ation 1 3 2 Package1*


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    68000-A4416 OT-23 EHP0Q935 EHP00757 3904 tr 3904 TR 3906 PNP SM Transistor 3904 transistor marking s1a 3904 SOT23 BT3904 sot23 3904 4007S S1A SOT23 PDF

    melf diode marking

    Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
    Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish


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    5KE100A-B 5KE100A-T 5KE100CA-B 5KE100CA-T 5KE10A-A 5KE10A-B 5KE10A-T 5KE10CA-B 5KE10CA-T 5KE110A-B melf diode marking A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT PDF

    transistor marking s1a

    Abstract: No abstract text available
    Text: FJX3904 NPN Epitaxial Silicon Transistor • General Purpose Transistor 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage


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    FJX3904 OT-323 FJX3904 transistor marking s1a PDF

    transistor marking s1a

    Abstract: TRANSISTOR S1A FJX3904 FJX3904TF 130010 TRANSISTOR I22 marking
    Text: FJX3904 NPN Epitaxial Silicon Transistor • General Purpose Transistor 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage


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    FJX3904 OT-323 FJX3904 transistor marking s1a TRANSISTOR S1A FJX3904TF 130010 TRANSISTOR I22 marking PDF

    NB SOT-23 NPN

    Abstract: ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector to Emitter Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Power Gain Outline Collector to


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    CH3904T CHT2222T 2SC4097 CH3904W CHT05 CHT42 CHTA42L CHT44 2SC2411K 2SC2412K NB SOT-23 NPN ch3904 CHT44 transistor marking s1a transistor s1p marking 1P sot-23 T05 sot-23 transistor marking t05 transistor C4G sot-23 39 MARKING SOT223 PDF

    CH3904GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH3904GP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


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    CH3904GP OT-23 OT-23) 200mA) CH3904GP PDF

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


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    Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28 PDF

    transistor marking s1a

    Abstract: No abstract text available
    Text: FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage


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    FJX3904 OT-323 FJX3904TF transistor marking s1a PDF

    ch3904pt

    Abstract: transistor marking s1a "marking s1a" sot-23 TRANSISTOR S1A 64 S1A sot-23 sot23 s1a marking sot23 transistor marking 12E ch3904 1N916 MA103
    Text: CHENMKO ENTERPRISE CO.,LTD CH3904PT SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * Low voltage Max.=40V . * High saturation current capability.


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    CH3904PT OT-23 OT-23) 200mA) 1N916 ch3904pt transistor marking s1a "marking s1a" sot-23 TRANSISTOR S1A 64 S1A sot-23 sot23 s1a marking sot23 transistor marking 12E ch3904 1N916 MA103 PDF

    2N3904

    Abstract: MMDT3904 1N916 SC70-6L sot363 s1a 2n3904 equivalent transistor marking code s1a transistor marking s1a
    Text: MMDT3904 DUAL SURFACE MOUNT NPN TRANSISTORS This device contains two electrically-isolated 2N3904 NPN transistors. The two transistors have well matched hFE and are encapsulated in an ultrasmall SOT-363 SC70-6L package. This device is ideal for portable


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    MMDT3904 2N3904 OT-363 SC70-6L) MMDT3904 T/R13 1N916 SC70-6L sot363 s1a 2n3904 equivalent transistor marking code s1a transistor marking s1a PDF

    2SD882P

    Abstract: ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA 200 500 200 150 150 150 500 200 100 100 100 50 500 200 600 600 100 100 100 150 150 150 200


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    SC-62 2SD882P ch3904 marking J1 sot-23 T05 sot-23 sot-23 marking NE MARKING J3 SOT-23 marking NB SOT-23 CHT846BWPTR LT 723 ic marking J2 sot-23 PDF

    transistor marking s1a

    Abstract: S1a SOT marking S1A
    Text: FJX3904 FJX3904 General Purpose Transistor 2 NPN Epitaxial Silicon Transistor 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted Value Units VCBO Symbol Collector-Base Voltage Parameter 60 V VCES Collector-Emitter Voltage


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    FJX3904 OT-323 transistor marking s1a S1a SOT marking S1A PDF

    transistor marking s1a

    Abstract: TRANSISTOR S1A FJX3904
    Text: FJX3904 FJX3904 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage


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    FJX3904 OT-323 transistor marking s1a TRANSISTOR S1A FJX3904 PDF

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16 PDF

    FJX3904

    Abstract: No abstract text available
    Text: FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCES Collector-Emitter Voltage


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    FJX3904 OT-323 FJX3904 PDF