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    TRANSISTOR MARKING TE SOT363 Search Results

    TRANSISTOR MARKING TE SOT363 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING TE SOT363 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LT 816

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1997 Dec 16 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 10 PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		115104/00/02/pp8 LT 816 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PUMH1 NPN resistor-equipped double transistor Product specification Supersedes data of 1997 Dec 12 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 06 PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		115104/00/02/pp8 PDF

    RQ TRANSISTOR

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMD12 NPN/PNP resistor-equipped transistor Product specification Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD12 FEATURES • Transistors with different polarity


    OCR Scan     		PUMD12 SC-88) 115002/00/01/pp8 RQ TRANSISTOR PDF

    MARKING CODE ht9

    Abstract: MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking
    Text: DISCRETE SEMICONDUCTORS SHEET PUMH9 NPN resistor-equipped double transistor 1999 May 06 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9 FEATURES • T ransistors with built-in bias resistors R1 typ. 10 k£2


    OCR Scan     		SCA64 15002/00/01/pp8 MARKING CODE ht9 MARKING ht9 sot363 h9 marking OT363 SOT363 marking code H9 transistor h9 MARKING HT9 SC88 SOT363 plastic package Ht9 MARKING CODE hT9 marking PDF

    PUMT1

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification PNP general purpose double transistor FEATURES PUMT1 PINNING • Low curren t max. 100 mA PIN • Low voltage (max. 40 V) 1 ,4 e m itte r TR1 ; TR 2 2, 5 base TR1 ; TR 2 3, 6 co lle cto r TR2; TR1 • R educes num ber of com ponents and boardspace.


    OCR Scan     		SC-88; OT363 PUMT1 PDF

    HT1 SOT363

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH11 FEATURES • T ransistors w ith built-in bias resistors R1 and R2 typ. 10 k£2 each • No m utual interference betw een the transistors 6 • S im plification of circu it design


    OCR Scan     		PUMH11 SC-88) SC-88 OT363 HT1 SOT363 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PUMH7 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Jun 29 Philips Sem iconductors 1999 Apr 22 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor


    OCR Scan     		115002/00/02/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE =40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		MMDT4401 600mA 2002/95/EC OT-363, MIL-STD-750, OT-363 2011-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PUMH11 NPN resistor-equipped double transistor 1998 Aug 10 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PUMH11 PUMH11 SC-88) 115104/00/02/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE =- 40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		T4403 -600mA 2002/95/EC OT-363, MIL-STD-750, OT-363 2011-REV PDF

    MMDT4403

    Abstract: transistor c 2026 TRANSISTOR m3a
    Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		MMDT4403 -600mA 2002/95/EC OT-363, MIL-STD-750, MMDT4403 transistor c 2026 TRANSISTOR m3a PDF

    TRANSISTOR MARKING TE SOT363

    Abstract: No abstract text available
    Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE =- 40V • Collector current I C = -600mA • / 


    Original     		T4403 -600mA OT-363, MIL-STD-750, OT-363 2011-REV TRANSISTOR MARKING TE SOT363 PDF

    BC857BS SOT363

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BC857BS PNP general purpose double transistor 1999 Apr 26 Product specification Supersedes data of 1997 Jul 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP general purpose double transistor


    OCR Scan     		BC857BS 115002/00/02/pp8 BC857BS SOT363 PDF

    TRANSISTOR MARKING TE SOT363

    Abstract: No abstract text available
    Text: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts SOT-363 Unit：inch mm • PNP epitaxial silicon, planar design 0.087(2.20) 0.074(1.90) • Collector-emitter voltage V CE = -40V 0.010(0.25) 0.087(2.20) 0.078(2.00)


    Original     		MMDT4403 -600mA 2002/95/EC OT-363 OT-363, MIL-STD-750, TRANSISTOR MARKING TE SOT363 PDF

    PHILIPS MARKING CODE AY SOT363

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PUMH1 NPN resistor-equipped double transistor Product specification Supersedes data of 1998 Aug 06 Philips Semiconductors 1999 May 20 PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped double transistor


    OCR Scan     		SCA64 5002/00/03/pp8 PHILIPS MARKING CODE AY SOT363 PDF

    MMDT4401

    Abstract: No abstract text available
    Text: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 200 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		MMDT4401 600mA 2002/95/EC OT-363, MIL-STD-750, MMDT4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		MMDT3904 200mA 2002/95/EC IEC61249 OT-363, MIL-STD-750, 2011-REV PDF

    MARKING 46n SOT-363

    Abstract: BC846APN
    Text: BC846APN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS COMPLIMENTARY This device contains two electrically-isolated complimently pair (NPN and PNP) general-purpose transisotrs.This device is ideal for portable applications where board space is at a premium VOLTAGE


    Original     		BC846APN 2002/95/EC OT-363, MIL-STD-750, MARKING 46n SOT-363 BC846APN PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.087 2.20 0.074(1.90) • Collector-emitter voltage V CE =40V 0.010(0.25) • Collector current I C = 600mA • / 


    Original     		MMDT4401 600mA OT-363, MIL-STD-750, 2011-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		MMDT3904 200mA 2002/95/EC OT-363, MIL-STD-750, 2011-REV PDF

    PUMX1

    Abstract: marking code IC .ztz
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Preliminary specification NPN general purpose double transistor


    OCR Scan     		SC-88 115002/00/03/pp8 PUMX1 marking code IC .ztz PDF

    AN 6752

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PUMB4 PNP resistor-equipped double transistors 1998 Aug 03 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors


    OCR Scan     		MAM344 115104/00/02/pp8 AN 6752 PDF

    Marking Code 13t

    Abstract: MARKING CODE 13t sot363 PHILIPS MARKING CODE AY SOT363
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC847BPN NPN/PNP general purpose transistor Preliminary specification Supersedes data of 1997 Jul 09 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Preliminary specification NPN/PNP general purpose transistor


    OCR Scan     		BC847BPN 115002/00/02/pp8 Marking Code 13t MARKING CODE 13t sot363 PHILIPS MARKING CODE AY SOT363 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT3906 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 200 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current I C = -200mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		MMDT3906 -200mA 2002/95/EC OT-363, MIL-STD-750, PDF