2SD2460
Abstract: 2SD24
Text: Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification M Di ain sc te on na tin nc ue e/ d Unit: mm marking • Absolute Maximum Ratings Ta=25˚C 1 Parameter Symbol Ratings Unit 20 V 20 V 15 V 1.5 A 0.7 A 300 mW 150 ˚C
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2SD2460
2SD2460
2SD24
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IC 7107
Abstract: 5252 F 1006 C 5763 transistor PT 4962 marking 5241 CRE 6203 ECSP1006-3 EC3H10B current 5241 10419
Text: Ordering number : ENN7324 EC3H10B NPN Epitaxial Planar Silicon Transistor EC3H10B UHF to S Band Low-Noise Amplifier and OSC Applications Features 1 3 2 0.15 1 1.0 0.05 0.25 Top View 0.05 • [EC3H10B] Bottom View 0.5 0.65 • unit : mm 2183A Marking 2 0.05
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ENN7324
EC3H10B
EC3H10B]
S21e2
ECSP1006-3
IC 7107
5252 F 1006
C 5763 transistor
PT 4962
marking 5241
CRE 6203
ECSP1006-3
EC3H10B
current 5241
10419
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2SD1512
Abstract: No abstract text available
Text: Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Ta=25˚C Parameter Symbol Ratings Unit 100 V 100 V 15 V 50 mA 20
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2SD1512
2SD1512
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Untitled
Abstract: No abstract text available
Text: Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 3.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features marking Ta=25˚C ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo
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2SD2460
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Untitled
Abstract: No abstract text available
Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2
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2SD0814,
2SD0814A
2SD814,
2SD814A)
2SD0814
2SD0814A
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2SB1537
Abstract: 2SD2357 2sb15
Text: Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 M Di ain sc te on na tin nc ue e/ d Unit: mm 0.4±0.08 0.5±0.08 1.5±0.1 2.5±0.1 +0.25 0.4max. 4.0–0.20 +0.1 45° 1.0–0.2 ● Low collector to emitter saturation voltage VCE sat .
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2SB1537
2SD2357
2SB1537
2SD2357
2sb15
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2SA1737
Abstract: No abstract text available
Text: Transistor 2SA1737 Silicon PNP epitaxial planer type For video amplifier M Di ain sc te on na tin nc ue e/ d Unit: mm • Absolute Maximum Ratings 0.5±0.08 1.5±0.1 2.5±0.1 +0.25 0.4max. 4.0–0.20 +0.1 0.4±0.08 0.4±0.04 3.0±0.15 Ta=25˚C 3 Parameter
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2SA1737
2SA1737
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Untitled
Abstract: No abstract text available
Text: Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 1 0.95 3 +0.1 1.9±0.2 0.65±0.15 +0.1 0.16 –0.06 2 Ta=25˚C 0.8 0.1 to 0.3 0.4±0.2 Parameter
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2SD1679
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Untitled
Abstract: No abstract text available
Text: Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 1 3 +0.1 +0.2 0.65±0.15 0.95 2.9 –0.05 ● 0.65±0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and
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2SD1304
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transistor marking 1f
Abstract: 2SC4543
Text: Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier M Di ain sc te on na tin nc ue e/ d Unit: mm • Absolute Maximum Ratings *2 0.5±0.08 1.5±0.1 Ta=25˚C 2.5±0.1 0.4max. +0.25 0.4±0.04 3.0±0.15 Parameter Symbol Ratings Unit Collector to base voltage
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2SC4543
transistor marking 1f
2SC4543
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Untitled
Abstract: No abstract text available
Text: Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 ● +0.2 ● 0.65±0.15 High-speed switching. Low collector to emitter saturation voltage VCE sat .
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2SC4782
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2SC4755
Abstract: No abstract text available
Text: Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 2.1±0.1 Unit 25 V 20 V VCES Emitter to base voltage VEBO Peak collector current ICP Collector current IC Collector power dissipation
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2SC4755
2SC4755
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2SD602
Abstract: No abstract text available
Text: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d Symbol
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2SD0602,
2SD0602A
2SD602,
2SD602A)
2SB0710
2SB710)
2SB0710A
2SB710A)
2SD0602
2SD0602A
2SD602
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2SB0789
Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Text: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) M Di ain sc te on na tin nc ue e/ d Unit: mm 4.5±0.1 Parameter Collector to base voltage
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2SD0968,
2SD0968A
2SD968,
2SD968A)
2SB0789
2SB789)
2SB0789A
2SB789A)
2SD0968
2SB0789
2SB0789A
2SB789
2SB789A
2SD0968
2SD0968A
2SD968
2SD968A
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2SC4782
Abstract: No abstract text available
Text: Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● +0.25 1.5 –0.05 0.65±0.15 High-speed switching. Low collector to emitter saturation voltage VCE sat .
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2SC4782
2SC4782
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transistor EKs
Abstract: transistor marking code 7C marking BSs sot23 transistor EKs 80 BCX41 marking AMs 4 pin bss 100 transistor marking BSs sot23 siemens
Text: SIEMENS NPN Silicon AF and Switching Transistor BCX 41 BSS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)
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OCR Scan
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Q62702-C1659
Q62702-S535
OT-23
41/BSS
BCX41
BSS64
EHP004J4
transistor EKs
transistor marking code 7C
marking BSs sot23
transistor EKs 80
marking AMs 4 pin
bss 100 transistor
marking BSs sot23 siemens
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking
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OCR Scan
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Q62702-F944
OT-23
fl23SbDS
00bb7fi
EHTG7054
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PDF
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marking code SG transistors
Abstract: ic MARKING FZ 2SC4713K 2SC4774 marking code SG transistor
Text: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM *, where ★ is hFE code • very low output on state resistance • low capacitance Applications • radio frequency amplifier
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OCR Scan
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2SC4713K
2SC4774
SC-59)
SC-70)
2SC4774;
2SC4713K,
marking code SG transistors
ic MARKING FZ
2SC4774
marking code SG transistor
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hl 4929
Abstract: 34T sot-363 ATIC 164 D2 48 pin
Text: That HEWLETT WL'kM PACKARD 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, A ctive Bias Circuit Surface Mount Package SOT-363 SC -70 D escription Pin C onnections and Package Marking The INA-12063 is a unique RFIC
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OCR Scan
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INA-12063
OT-363
INA-12063
OT-363
OT-143
5965-5365E
4447S
GD1S32Û
hl 4929
34T sot-363
ATIC 164 D2 48 pin
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Untitled
Abstract: No abstract text available
Text: S IE M E N S NPN Silicon A F and Switching Transistor BCX 41 B SS 64 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BCX 42, BSS 63 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1)
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OCR Scan
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Q62702-C1659
Q62702-S535
OT-23
BCX41
BSS64
B235bQ5
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP medium frequency transistor BF550 FEATURES PINNING • Low curren t max. 25 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • M edium freq uency applications in th ick and thin film
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OCR Scan
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BF550
MAM256
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN medium frequency transistor BFS19 FEATURES PINNING • Low cu rrent max. 30 mA PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r M edium freq uency applications in th ick and thin-film
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OCR Scan
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BFS19
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3 pin mini mold transistor
Abstract: R25 TRANSISTOR r25 marking mini mold transistor 25 transistor r24 2sc4226 2SC4226-T1 transistor marking T2 amplifier TRANSISTOR 12 GHZ r23 transistor
Text: DATA SHEET - SILICON TRANSISTOR 2SC4226 H IG H FREQ UENC Y LOW NO ISE A M P L IF IE R NPN SILICO N EPITAXIAL TR A N S IS T O R SU PE R M INI M O LD DESCRIPTION
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OCR Scan
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2SC4226
2SC4226
SC-70
3 pin mini mold transistor
R25 TRANSISTOR
r25 marking
mini mold transistor 25
transistor r24
2SC4226-T1
transistor marking T2
amplifier TRANSISTOR 12 GHZ
r23 transistor
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Panasonic MARKING chart
Abstract: No abstract text available
Text: Panasonic Composite Transistors XN04A88 Silicon NPN epitaxial planer transistor T ri Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For am plification of low freq ue n cy output • Features • Two elements incorporated into one package. • Reduction of the mounting area and assembly cost by one half.
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OCR Scan
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XN04A88
2SD601A
UNR511Q
SC-74
Panasonic MARKING chart
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PDF
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