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    TRANSISTOR MARKING YB Search Results

    TRANSISTOR MARKING YB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    TRANSISTOR MARKING YB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd marking code YBs SOT-23

    Abstract: Q67041-S1417 marking YBS sot-23 smd marking code sot-23 infineon YBs sot-23 Q67041S1417 SMD MARKING QG 6 PIN
    Text: BSS 84 P Final data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS -60 V 8 W -0.17 A RDS on ID SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking


    Original     		PDF OT-23 VPS05161 Q67041-S1417 smd marking code YBs SOT-23 Q67041-S1417 marking YBS sot-23 smd marking code sot-23 infineon YBs sot-23 Q67041S1417 SMD MARKING QG 6 PIN

    smd marking code ybs

    Abstract: q67041-s1417 SP000082879 BSS84P E6327 marking YBs sot-23 YBs 98 BSS84P E6327 L6327 YBs 70
    Text: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS RDS on ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 Type Package Ordering Code Marking BSS84P - E6327 PG-SOT-23


    Original     		PDF PG-SOT-23 Q67041-S1417 BSS84P L6327 SP000082879 E6327 VPS05161 smd marking code ybs q67041-s1417 SP000082879 BSS84P E6327 marking YBs sot-23 YBs 98 E6327 L6327 YBs 70

    Q67041-S1417

    Abstract: BSS 84 infineon
    Text: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS -60 V 8 W -0.17 A RDS on ID SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking BSS 84 P


    Original     		PDF OT-23 VPS05161 Q67041-S1417 Q67041-S1417 BSS 84 infineon

    smd marking code YBs 14

    Abstract: smd marking code ybs marking YBs
    Text: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS RDS on ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking BSS 84 P


    Original     		PDF PG-SOT-23 VPS05161 Q67041-S1417 smd marking code YBs 14 smd marking code ybs marking YBs

    YB1211

    Abstract: No abstract text available
    Text: YB1211 300mA External Adjustable LDO Regulator Features Description The YB1211 is a low-noise, low dropout LDO linear regulator with enable function and external adjustable output voltage. It operates at an input supply of 2.0~6.0V and is able to output voltages


    Original     		PDF YB1211 300mA YB1211

    YB1220

    Abstract: SOT-26T ic voltage regulator circuit diagram SOT-26M
    Text: YB1220 Dual Channel 200mA LDO Regulator Description Features The YB1220 family is a dual-channel LDO product consisting of 2 independent low noise, low dropout LDO , linear regulators especially designed for battery-powered equipment and portable device.


    Original     		PDF YB1220 200mA YB1220 10KHz OT23-6 SOT-26T ic voltage regulator circuit diagram SOT-26M

    YB1230

    Abstract: RF transistor marking IN SOT-89 thermal sensor internal block diagram
    Text: YB1230 600mA, Low-Noise LDO Regulator „ Description „ The YB1230 is a series of low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1230 regulators achieve a low 500mV dropout at 600mA load current of 3.1V output and are


    Original     		PDF YB1230 600mA, YB1230 500mV 600mA RF transistor marking IN SOT-89 thermal sensor internal block diagram

    YB1231

    Abstract: voltage regulator with current limiter with mosfet
    Text: YB1231 HV600mA, Low-Noise LDO Regulator „ Description „ The YB1231 is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1231 regulators achieve a low 440mV dropout at 600mA load current of 4.5V output and are


    Original     		PDF YB1231 HV600mA, YB1231 440mV 600mA voltage regulator with current limiter with mosfet

    2815 voltage regulator

    Abstract: 805 SOT-89 YB1230 voltage regulator with current limiter with mosfet voltage regulator 2805 transistor wireless sensor circuit diagram
    Text: YB1230 – 600mA Low-Noise LDO Regulator Description Features The YB1230 is a series of low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1230 regulators achieve a low 500mV dropout at 600mA load current of 3.1V output and are


    Original     		PDF YB1230 600mA YB1230 500mV 600mA 2815 voltage regulator 805 SOT-89 voltage regulator with current limiter with mosfet voltage regulator 2805 transistor wireless sensor circuit diagram

    YB1210R

    Abstract: LDO SOT89 vin 30v RF transistor marking IN SOT-89
    Text: YB1210R 300mA, Ultra-Low-Noise, High PSRR LDO Regulator „ Description „ The YB1210R is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1210R regulators achieve a low 320mV dropout at 300mA load current of 3.3V


    Original     		PDF YB1210R 300mA, YB1210R 320mV 300mA LDO SOT89 vin 30v RF transistor marking IN SOT-89

    EFTEC-64T

    Abstract: SC82 SC-82 YB1200R ldo regulator
    Text: YB1200R 150mA High PSRR with Auto-Discharge LDO Regulator Features Description The YB1200R is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1200R regulators achieve a low 180mV dropout at 150mA load current of 3.3V


    Original     		PDF YB1200R 150mA YB1200R 180mV 40mils EFTEC-64T SC82 SC-82 ldo regulator

    YB1210R

    Abstract: RF transistor marking IN SOT-89
    Text: YB1210R 300mA, Ultra-Low-Noise, High PSRR LDO Regulator Features Description The YB1210R is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1210R regulators achieve a low 320mV dropout at 300mA load current of 3.3V


    Original     		PDF YB1210R 300mA, YB1210R 320mV 300mA RF transistor marking IN SOT-89

    YB1231

    Abstract: RF transistor marking IN SOT-89
    Text: YB1231 – HV600mA Low-Noise LDO Regulator Description Features The YB1231 is a series of ultra-low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1231 regulators achieve a low 440mV dropout at 600mA load current of 4.5V output and are


    Original     		PDF YB1231 HV600mA YB1231 440mV 600mA RF transistor marking IN SOT-89

    YB1210

    Abstract: No abstract text available
    Text: YB1210 – 300mA Ultra-Low-Noise, High PSRR LDO Regulator Description Features The YB1210 family consists of a series of 300mA ultra-low-noise, low dropout LDO linear regulators especially designed for battery-powered RF and wireless applications. The YB1210 regulator


    Original     		PDF YB1210 300mA YB1210 300mA 450mV 250mA

    q406 transistor

    Abstract: nf 820 transistor q406 q406 transistor data
    Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q


    OCR Scan     		PDF Q62702-S638 Q62702-S637 E6288 E6296 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 q406 transistor nf 820 transistor q406 q406 transistor data

    SIEMENS BST 68

    Abstract: SIEMENS BST 68 L
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		PDF 900MHz Q62702-F1577 OT-343 H35b05 BFP193W fl53SbOS SIEMENS BST 68 SIEMENS BST 68 L

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    OCR Scan     		PDF 900MHz Q62702-F1501 OT-343

    Untitled

    Abstract: No abstract text available
    Text: 32E ]> • 623 3350 0Qlb747 Q « S I P NPN Silicon RF Transistor T - *51- 17 BF 599 SIEMENS/ SPCLi SEMICONDS_ • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion Type Marking


    OCR Scan     		PDF 0Qlb747 Q62702-F550 Q62702-F979 T-31-17 23b320

    BFQ64

    Abstract: No abstract text available
    Text: NPN Silicon RF Transistor BFQ64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. Type Marking Ordering code tape and reel Package BFQ64 FC Q 62702 - F 1 061 SOT-89 Maximum Ratings


    OCR Scan     		PDF BFQ64 OT-89 BFQ64

    TRANSISTOR MARKING YB

    Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
    Text: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj


    OCR Scan     		PDF 3904PN Q62702-C OT-363 3904PN TRANSISTOR MARKING YB sot36 3904P marking code Yb Transistor 70 sot3-6

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF Q62702-F1382 OT-143 235bQ5 BFP183 900MHz

    sot-23 MARKING CODE ZA

    Abstract: sot-23 CODE 41 bfs17p mc
    Text: NPN Silicon RF Transistor BFS17P • For broadband amplifiers up to 1 G H z at collector currents from 1 to 20 mA. E C E C C -typ e available: C E C C 50002/262. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code


    OCR Scan     		PDF BFS17P OT-23 sot-23 MARKING CODE ZA sot-23 CODE 41 bfs17p mc

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ö23b320 O G l b U l S « S I P NPN Silicon RF Transistor -p_ ^ | « ^ 3 .S IE M E N S / SPCLi SEMICONDS _ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. TVpe Marking


    OCR Scan     		PDF 23b320 BFQ64 -F106T OT-89 A23b35Q

    2sc3518

    Abstract: c 3518 transistor mp
    Text: :*A i à SH h t i SILICON TRANSISTOR 2SC3518-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2S C 3518-Z is designed fo r A u d io Frequency A m p lifie r and PACKAGE DMENSIONS in millimeters S w itching, esp ecially in H ybrid Integrated Circuits. FEATURES


    OCR Scan     		PDF 2SC3518-Z 3518-Z IEI-1209) 2sc3518 c 3518 transistor mp