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    TRANSISTOR MARKING YK Search Results

    TRANSISTOR MARKING YK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    TRANSISTOR MARKING YK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WK2 94V0

    Abstract: wk2 94v-0 transistor wu1 wk1 sot-23 wk2 sot 23 94v0 wk2 marking wk1 wu1 sot-23 marking wk2 marking wu1
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VCE / IC VCEO IC V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Power Gain Resistor Dissipation Outline


    Original     		PDF CHDTA114TM CHDTA115TM CHDTA124TM CHDTA143TM CHDTA144TM CHDTA114TE CHDTA115TE CHDTA124TE CHDTA143TE CHDTA144TE WK2 94V0 wk2 94v-0 transistor wu1 wk1 sot-23 wk2 sot 23 94v0 wk2 marking wk1 wu1 sot-23 marking wk2 marking wu1

    WK2 94V0

    Abstract: transistor wu1 94v0 wk2 wk1 sot-23 wk2 sot 23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector Collector to DC Current Gain Emitter Current Marking Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Equivalent Gain Outline


    Original     		PDF CHDTA114TMPT CHDTA115TMPT CHDTA124TMPT CHDTA143TMPT CHDTA144TMPT CHDTA114TEPT CHDTA115TEPT CHDTA124TEPT CHDTA143TEPT CHDTA144TEPT WK2 94V0 transistor wu1 94v0 wk2 wk1 sot-23 wk2 sot 23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1

    marking WJ sot-23

    Abstract: chdtc143eept SOT-723 NPN SOT-23 WF CHDTC114EEPT NPN SOT-23 MARKING Wj ZUA SOT23 CHDTC143XUPT transistor marking 44 sot23 CHDTC143XMPT
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector Collector to DC Current Gain Emitter Current Marking Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Voltage Bias Equivalent Gain Outline


    Original     		PDF CHDTC114TMPT CHDTC115TMPT CHDTC123TMPT CHDTC124TMPT CHDTC143TMPT CHDTC144TMPT CHDTC114TEPT CHDTC115TEPT CHDTC124TEPT CHDTC143TEPT marking WJ sot-23 chdtc143eept SOT-723 NPN SOT-23 WF CHDTC114EEPT NPN SOT-23 MARKING Wj ZUA SOT23 CHDTC143XUPT transistor marking 44 sot23 CHDTC143XMPT

    NPN SOT-23 MARKING Wj

    Abstract: NPN SOT-23 WF NPN SOT-23 MARKING WF marking WJ sot-23 marking T02 sot-23 CHDTC114YU marking eua Marking 723 SOT-23 723 SOT-723 SOT-723
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VCE / IC VCEO IC V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Power Gain Resistor Dissipation Outline


    Original     		PDF CHDTC114TM CHDTC115TM CHDTC124TM CHDTC143TM CHDTC144TM CHDTC114TE CHDTC115TE CHDTC124TE CHDTC143TE CHDTC144TE NPN SOT-23 MARKING Wj NPN SOT-23 WF NPN SOT-23 MARKING WF marking WJ sot-23 marking T02 sot-23 CHDTC114YU marking eua Marking 723 SOT-23 723 SOT-723 SOT-723

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    Untitled

    Abstract: No abstract text available
    Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2110FT RN2111FT RN1110FT, RN1111FT

    RN1910FE

    Abstract: RN1911FE RN2910FE RN2911FE transistor marking YK ic marking YK
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE, RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN2910FE, RN1910FE, RN1911FE RN2910FE RN1910FE RN1911FE RN2911FE transistor marking YK ic marking YK

    Untitled

    Abstract: No abstract text available
    Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2110FT RN2111FT RN1110FT, RN1111FT

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    RN1110FT

    Abstract: RN1111FT RN2110FT RN2111FT
    Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT, RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2110FT RN2111FT RN2110FT, RN1110FT, RN1111FT RN2110FT RN1110FT RN1110FT RN1111FT RN2111FT

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN1710JE 1711JE

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN1710JE 1711JE

    RN1710JE

    Abstract: RN2710JE RN2711JE transistor marking YK 6 pin 1711JE
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit in mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE 1711JE RN2710JE RN2711JE transistor marking YK 6 pin 1711JE

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN1710JE, RN1711JE

    RN1910FE

    Abstract: RN1911FE RN2910FE RN2911FE marking YK 6-pin transistor marking YK 6 pin
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE RN1910FE RN1911FE RN2911FE marking YK 6-pin transistor marking YK 6 pin

    RN1710JE

    Abstract: RN1711JE RN2710JE RN2711JE transistor marking YK 6 pin
    Text: RN2710JE, RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)


    Original     		PDF RN2710JE, RN2711JE RN1710JE, RN1711JE RN1710JE RN1711JE RN2710JE RN2711JE transistor marking YK 6 pin

    Untitled

    Abstract: No abstract text available
    Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original     		PDF RN2110FT RN2111FT RN1110FT, RN1111FT

    marking 2u

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA123YKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-59/SOT-346 * Small surface mounting type. SC-59/SOT-346


    Original     		PDF CHDTA123YKPT SC-59/SOT-346 SC-59/SOT-346) -40OC 100OC -500m -500u -200u -100u marking 2u

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTB123YKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-59/SOT-346 * Small surface mounting type. SC-59/SOT-346


    Original     		PDF CHDTB123YKPT SC-59/SOT-346 SC-59/SOT-346) 100OC -500m -100u -200m -100m

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTD123YKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 500 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.


    Original     		PDF CHDTD123YKPT SC-59/SOT-346) SC-59/SOT-346 100OC -40OC

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC123YKPT SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SC-59/SOT-346 * High current gain.


    Original     		PDF CHDTC123YKPT SC-59/SOT-346) SC-59/SOT-346 100OC -40OC

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA114YKPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 70 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-59/SOT-346 * Small surface mounting type. SC-59/SOT-346


    Original     		PDF CHDTA114YKPT SC-59/SOT-346 SC-59/SOT-346) 100OC -100m -500m -40OC -200m

    transistor marking YK 6 pin

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE, RN1711JE transistor marking YK 6 pin