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    TRANSISTOR MARKING YK 6 PIN Search Results

    TRANSISTOR MARKING YK 6 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MARKING YK 6 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    RN1910FE

    Abstract: RN1911FE RN2910FE RN2911FE transistor marking YK ic marking YK
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE, RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN2910FE, RN1910FE, RN1911FE RN2910FE RN1910FE RN1911FE RN2911FE transistor marking YK ic marking YK

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE

    RN1910FE

    Abstract: RN1911FE RN2910FE RN2911FE marking YK 6-pin transistor marking YK 6 pin
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE RN1910FE RN1911FE RN2911FE marking YK 6-pin transistor marking YK 6 pin

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN1710JE, RN1711JE

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN1710JE 1711JE

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE,RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN1710JE 1711JE

    RN1710JE

    Abstract: RN2710JE RN2711JE transistor marking YK 6 pin 1711JE
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit in mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE 1711JE RN2710JE RN2711JE transistor marking YK 6 pin 1711JE

    RN1710JE

    Abstract: RN1711JE RN2710JE RN2711JE transistor marking YK 6 pin
    Text: RN2710JE, RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)


    Original     		PDF RN2710JE, RN2711JE RN1710JE, RN1711JE RN1710JE RN1711JE RN2710JE RN2711JE transistor marking YK 6 pin

    ic marking YK

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910FE,RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original     		PDF RN2910FE RN2911FE RN1910FE, RN1911FE ic marking YK

    transistor marking YK 6 pin

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE, RN1711JE transistor marking YK 6 pin

    Untitled

    Abstract: No abstract text available
    Text: RN2910FE,RN2911FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2910FE, RN2911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original     		PDF RN2910FE RN2911FE RN2910FE, RN1910FE, RN1911FE

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE, RN1711JE

    Untitled

    Abstract: No abstract text available
    Text: RN2710JE,RN2711JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2710JE, RN2711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin)


    Original     		PDF RN2710JE RN2711JE RN2710JE, RN1710JE, RN1711JE

    MJW21194

    Abstract: CIB-1000 TRANSISTOR npn MJW21193 MJW21193G MJW21194G
    Text: MJW21193 PNP MJW21194 (NPN) Preferred Devices Silicon Power Transistors The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com


    Original     		PDF MJW21193 MJW21194 MJW21193 MJW21194 MJW21193/D CIB-1000 TRANSISTOR npn MJW21193G MJW21194G

    Untitled

    Abstract: No abstract text available
    Text: Datasheet System Motor Driver Series for CD・DVD Player 4ch System Motor Driver For Car Audio BD8226EFV General Description BD8226EFV is a 5-input, 4-output BTL driver developed for driving Spindle motor CH1 , Sled/Loading motor (CH2) and the actuator coils


    Original     		PDF BD8226EFV BD8226EFV

    Untitled

    Abstract: No abstract text available
    Text: NBSG11 2.5V/3.3V SiGe 1:2 Differential Clock Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The SG11 is a Silicon Germanium 1-to-2 differential fanout buffer, optimized for low skew and ultra-low JITTER. Inputs incorporate internal 50 W termination resistors and accept


    Original     		PDF NBSG11 40acture r14525 NBSG11/D

    Untitled

    Abstract: No abstract text available
    Text: Datasheet System Motor Driver Series for CD・DVD Player 4ch System Motor Driver For Car Audio BD8226EFV General Description BD8226EFV is a 5-input, 4-output BTL driver developed for driving Spindle motor CH1 , Sled/Loading motor (CH2) and the actuator coils


    Original     		PDF BD8226EFV BD8226EFV

    Untitled

    Abstract: No abstract text available
    Text: NBSG16 2.5V/3.3V SiGe Differential Receiver/Driver with RSECL* Outputs *Reduced Swing ECL http://onsemi.com The SG16 is a Silicon Germanium differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices with much higher bandwidth and lower EMI capabilities.


    Original     		PDF NBSG16 LVEP16 r14525 NBSG16/D

    KBR-912F108

    Abstract: KXO-01-1-40.0000MHZ uPC1403CA Quartz Crystal Oscillators 3.57MHz CI 4069 Kyocera kxo-01-1 M51785 BA7004 HA13468 HC1-CSE 50 MHZ
    Text: KYOCERA Timing Devices Resonators Crystals Oscillators Table of Contents CERAMIC RESONATORS General Description . 2-7 KBR -Y Series - Surface Mountable — fo: 380 to 1050 kHz . 8-9


    Original     		PDF AP-TD30M398-C KBR-912F108 KXO-01-1-40.0000MHZ uPC1403CA Quartz Crystal Oscillators 3.57MHz CI 4069 Kyocera kxo-01-1 M51785 BA7004 HA13468 HC1-CSE 50 MHZ

    Untitled

    Abstract: No abstract text available
    Text: _ LT1236 r r i m m TECHNOLOGY D€SCRIPTIOn F € f lT U R € S • Ultra-Low Drift: 5ppm/°C Max ■ Trimmed to High Accuracy: 0.05% Max ■ Industrial Temperature Range SO Package ■ ■ ■ ■ ■ ■ ■ Operates in Series or Shunt Mode Pin Compatible with AD586, AD587


    OCR Scan     		PDF LT1236 AD586, AD587 100dB LT1236TA09 DQ13237 LT1019 LT1027

    Untitled

    Abstract: No abstract text available
    Text: SPEC. No. ED-02216 ISSUE September 2, 2002 SHARP OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR Infrared Delecting unit for Remote Control MODEL No. GP1UE28YK series Specified for Enclosed please find copies of the Specifications which consists of 11 pages including cover.


    OCR Scan     		PDF ED-02216 GP1UE28YK of200pcs. RUD0X14 10-tray) 2000pcs. 2000pcsVpackage:

    Untitled

    Abstract: No abstract text available
    Text: TDC1147 TDC1147 Monolithic Video A/D Converter 7-Bit, 15Msps Description Features The TDC1147 is a 7-bit “flash” analog-to-digital converter which has no pipeline delay between sampling and valid data. The output data register normally found on flash A/D converters has been bypassed, allowing


    OCR Scan     		PDF TDC1147 TDC1147 15Msps TDC1047 15ussed