TRANSISTOR MARKING Z11 Search Results

TRANSISTOR MARKING Z11 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MARKING Z11 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor A113 Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array	Original	MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table	PDF
ON SEMICONDUCTOR J122 Abstract: MRF9002NR2 Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array	Original	MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122	PDF
J133 mosfet transistor Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133 Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array	Original	MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133	PDF
MRF9002NR2 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array	Original	MRF9002R2 MRF9002NR2 PFP-16	PDF
J133 mosfet transistor Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF Text: MRF9002R2 Rev. 5, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array	Original	MRF9002NT1 MRF9002R2 MRF9002R2 J133 mosfet transistor ON SEMICONDUCTOR J122 transistor a113 a113 transistor marking transistor RF	PDF
power transistor unit j122 Abstract: MRF9002NR2 Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9002NR2 MRF9002NR2 power transistor unit j122	PDF
MRF9002NR2 Abstract: marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113 Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9002NR2 MRF9002NR2 marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113	PDF
MRF9002NR2 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9002NR2 PFP-16 MRF9002NR2	PDF
MRF9002NR2 Abstract: A113 RO4350 mosfet j133 j239 J122 MARKING Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9002NR2 MRF9002NR2 A113 RO4350 mosfet j133 j239 J122 MARKING	PDF
MRF9002NR2 Abstract: RO4350 J104 J158 Text: Document Number: MRF9002NR2 Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9002NR2 PFP-16 MRF9002NR2 RO4350 J104 J158	PDF
smd-transistor DATA BOOK Abstract: TRANSISTOR SMD MARKING CODE SAW TRANSISTOR SMD MARKING CODE 2t SIEMENS saw filter transistor smd code marking 2406 B39431-R641-B110 smd transistor 2T saw resonator r2632 R2632 saw tv if filters Text: Resonator R 641 433,92 MHz Features Metal package TO 39 ● 1-port resonator Terminals ● Gold-plated NiFeCo alloy Dimensions in mm, approx. weight 1,0 g Pin configuration 1 Input 1 2 Ground 3 Ground Type Ordering code Marking R 641 B39431-R641-B110 Type, date code	Original	B39431-R641-B110 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE SAW TRANSISTOR SMD MARKING CODE 2t SIEMENS saw filter transistor smd code marking 2406 B39431-R641-B110 smd transistor 2T saw resonator r2632 R2632 saw tv if filters	PDF
MMRF1019NR4 Abstract: No abstract text available Text: Document Number: MMRF1019N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MMRF1019NR4 RF power transistor designed for pulse applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for	Original	MMRF1019N MMRF1019NR4 7/2014Semiconductor, MMRF1019NR4	PDF
Untitled Abstract: No abstract text available Text: VS-HFA16PB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization:	Original	VS-HFA16PB120HN3 AEC-Q101 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
orient 817b Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b Text: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada	Original	DL150/D May-2001 r14525 DLD601 orient 817b UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b	PDF

Untitled Abstract: No abstract text available Text: VS-HFA30PB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: 	Original	VS-HFA30PB120HN3 AEC-Q101 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
MJD310 Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282 Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282	PDF
johanson Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	MRF284LSR1 MRF284LR1 johanson	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1	PDF
A9M15 Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1 A9M15 AFT09MS015N TRANSISTOR Z10 D55295 815 transistor	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136	Original	AFT09MS015N AFT09MS015NT1	PDF
BFG55A Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60	PDF
W1P 59 transistor Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF

TRANSISTOR MARKING Z11 Search Results

TRANSISTOR MARKING Z11 Result Highlights (5)

TRANSISTOR MARKING Z11 Datasheets Context Search

transistor A113

ON SEMICONDUCTOR J122

J133 mosfet transistor

MRF9002NR2

J133 mosfet transistor

power transistor unit j122

MRF9002NR2

MRF9002NR2

MRF9002NR2

MRF9002NR2

smd-transistor DATA BOOK

MMRF1019NR4

Untitled

orient 817b

Untitled

MJD310

johanson

Untitled

A9M15

Untitled

Untitled

BFG55A

W1P 59 transistor

transistor f6 13003