TRANSISTOR MJE 100 Search Results

TRANSISTOR MJE 100 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR MJE 100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor Electronic ballast Abstract: 15A POWER TRANSISTOR FOR SMPS MJE13003 Electronic ballast 11W MJE13005 mje13005 ballast mje13003 ballast MJE13007 electronic ballast MJE13005 electronic ballast with MJE13007 Text: “Quality First” First” First & Best KEC Power Transistor MJE Series Device APP MKTMKT-G “Quality First” First” First & Best Power Transistor (MJE Series) ▣ Application High Voltage Switch Mode ▣ Feature High Speed Switching High Voltage Capability	Original	O-126 O-220IS O-220AB O-126 O-220IS O-220AB KTC5027/F STBV32 FJN13003 BUJ100 transistor Electronic ballast 15A POWER TRANSISTOR FOR SMPS MJE13003 Electronic ballast 11W MJE13005 mje13005 ballast mje13003 ballast MJE13007 electronic ballast MJE13005 electronic ballast with MJE13007	PDF
MJF18008 equivalent Abstract: MTP8P10 MUR105 221D MJE18008 MJE210 MJF18008 MPF930 Text: ON Semiconductor MJE18008 * MJF18008 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art	Original	MJE18008 MJF18008 MJE/MJF18008 r14525 MJE18008/D MJF18008 equivalent MTP8P10 MUR105 221D MJE18008 MJE210 MJF18008 MPF930	PDF
221D Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105 Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art	Original	MJE18004 MJF18004 MJE/MJF18004 r14525 MJE18004/D 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105	PDF
mjf18004 Abstract: No abstract text available Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state−of−the−art	Original	MJE/MJF18004 MJE18004 MJF18004 AN1040. mjf18004	PDF
mje18008 Abstract: MJE/MJF18008 Text: ON Semiconductor MJE18008 * MJF18008 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state−of−the−art	Original	MJE/MJF18008 MJE18008 MJF18008 O-220 MJF1800ge AN1040. mje18008	PDF
221D Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105 Text: ON Semiconductort MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art	Original	MJE18004 MJF18004 MJE/MJF18004 r14525 MJE18004/D 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105	PDF
221D Abstract: MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105 Text: ON Semiconductor MJE18008 * MJF18008 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art	Original	MJE18008 MJF18008 MJE/MJF18008 r14525 MJE18008/D 221D MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105	PDF
MJE 5740 Abstract: MJF18008 equivalent 221D MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105 Text: ON Semiconductort MJE18008 * MJF18008 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art	Original	MJE18008 MJF18008 MJE/MJF18008 r14525 MJE18008/D MJE 5740 MJF18008 equivalent 221D MJE18008 MJE210 MJF18008 MPF930 MTP8P10 MUR105	PDF
2sc1826 transistor Abstract: MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art die designed	Original	MJE18008 MJF18008 MJE/MJF18008 MJF18008, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2sc1826 transistor MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147	PDF
MJE105 Abstract: 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS The MJE/MJF18002 have an applications specific state–of–the–art die designed	Original	MJE/MJF18002 MJF18002, E69369 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE105 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st	PDF
Untitled Abstract: No abstract text available Text: ON Semiconductort MJE18206 MJF18206 SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art	Original	MJE/MJF18206 MJE18206 MJF18206 r14525 MJE18206/D	PDF
2SD436 Abstract: mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state–of–the–art die designed	Original	MJE18006 MJF18006 MJE/MJF18006 MJF18006, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2SD436 mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100	PDF
EQUIVALENT FOR mjf18004 Abstract: 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed	Original	MJE/MJF18004 MJF1832 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C EQUIVALENT FOR mjf18004 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits	PDF
MJE18008G Abstract: 221D MJE18008 MJF18008 MJF18008G MTP8P10 Text: MJE18008G, MJF18008G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.	Original	MJE18008G, MJF18008G MJE/MJF18008G O-220 O-220 MJF18008, E69369 MJE18008/D MJE18008G 221D MJE18008 MJF18008 MJF18008G MTP8P10	PDF

MJE/MJF18008 Abstract: No abstract text available Text: MJE18008, MJF18008 Preferred Device SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.	Original	MJE18008, MJF18008 MJE/MJF18008 O-220 MJF18008, E69369 MJE18008/D	PDF
221D Abstract: MJE18009 MJF18009 MPF930 MTP8P10 MUR105 Text: ON Semiconductort MJE18009 MJF18009 SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated SWITCHMODE Power	Original	MJE18009 MJF18009 MJE/MJF18009 r14525 MJE18009/D 221D MJE18009 MJF18009 MPF930 MTP8P10 MUR105	PDF
transistor mje13007 equivalent Abstract: 1500 watts inverter diagrams mje13007 equivalent 221D AN719 AN873 AN875 MJE13007 MJF13007 MJE13007D Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching	Original	MJE13007/D MJE13007 MJF13007 MJE/MJF13007 MJE13007/D* transistor mje13007 equivalent 1500 watts inverter diagrams mje13007 equivalent 221D AN719 AN873 AN875 MJE13007 MJF13007 MJE13007D	PDF
mjf*8004 Abstract: MJF18004G MJE18004G mje18004 MJE1800 Text: MJE18004G, MJF18004G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.	Original	MJE18004G, MJF18004G MJE/MJF18004G O-220 MJF18004, E69369 MJE18004/D mjf*8004 MJE18004G mje18004 MJE1800	PDF
MJF18004G Abstract: MJE18004G MJF18004 MTP8P10 221D MJE18004 Text: MJE18004G, MJF18004G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.	Original	MJE18004G, MJF18004G MJE/MJF18004G O-220 MJE18004/D MJF18004G MJE18004G MJF18004 MTP8P10 221D MJE18004	PDF
E 13009 2 Abstract: transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l Text: / b aS3T31 001=113? 1 DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change without notice. J N AMER PHILIPS/DISCRETE MJE 13008 MJE 13009 V ESE D T *" 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended fo r use	OCR Scan	aS3T31 O-220 MJE13008 bb53131 E 13009 2 transistor E 13009 EB 13009 D e 13009 l p 13009 D 13009 K transistor mje EB 13009 e 13009 d transistor E 13009 l	PDF
Transistors 13005 D Abstract: Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K Text: tati53^3X D 0 n i2 7 = 1 D EV E LO P M E N T D ATA MJE 13004 MJE 13005 This data sheet contains advance information and specifications are subject to change without notice. N AI1ER PHILIPS/DISCRETE SSE D T - 53~I3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed glass passivated npn power transistor in a TO-220 envelope, intended for use	OCR Scan	tati53 O-220 MJE13004 bS3131 T-33-73 Transistors 13005 D Transistor MJE 5331 13005 2 transistor hf 13005 MJE 5331 transistor E 13005 EB 13005 E 13005 L D 13005 K	PDF
MJE2160 Abstract: MJE1090 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103 Text: MJE2090 H, MJE2093 SILICON For Specifications, See MJE1090 Data. MJE2100 th r u MJE2103 (SILICON) For Specifications, See MJE 1090 Data. MJE2160 (silicon) PLASTIC MEDIUM-POWER NPN SILICON TRANSISTOR 1.5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for line operated audio output amplifier applications	OCR Scan	MJE2090 MJE2093 MJE1090 MIE2100 MJE2103 MJE2160 SeeAN-415) MJE2160 power transistor audio amplifier 500 watts MJE2090 MJE210 MJE2093 MJE2103	PDF
312oc Abstract: mjf8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230 Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet SWITCHMODE™ MJE18004 M JF18004* NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Dovlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state-of-the-art die designed	OCR Scan	MJE/MJF18004 O-220 AN1040. 312oc mjf*8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230	PDF
MJE1800 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006* M JF 18006* Designer’s Data Sheet SWITCHMODE™ MotoroJ Pnhmd NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state-of-the-art die designed	OCR Scan	MJE/MJF18006 O-220 MJF18006, E6936ing AN1040. MJE1800	PDF

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TRANSISTOR MJE 100 Search Results

TRANSISTOR MJE 100 Result Highlights (5)

TRANSISTOR MJE 100 Datasheets Context Search

transistor Electronic ballast

MJF18008 equivalent

221D

mjf18004

mje18008

221D

221D

MJE 5740

2sc1826 transistor

MJE105

Untitled

2SD436

EQUIVALENT FOR mjf18004

MJE18008G

MJE/MJF18008

221D

transistor mje13007 equivalent

mjf*8004

MJF18004G

E 13009 2

Transistors 13005 D

MJE2160

312oc

MJE1800