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    TRANSISTOR MJE 170 Search Results

    TRANSISTOR MJE 170 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MJE 170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc1826 transistor

    Abstract: MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18008 * MJF18008 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state–of–the–art die designed


    Original     		PDF MJE18008 MJF18008 MJE/MJF18008 MJF18008, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2sc1826 transistor MJE15020 MJE18008 equivalent MJ13010 MJF18008 equivalent 2N6025 MJ2955 replacement BU108 NSP2480 replacement for TIP147

    MJE105

    Abstract: 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS The MJE/MJF18002 have an applications specific state–of–the–art die designed


    Original     		PDF MJE/MJF18002 MJF18002, E69369 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE105 2sd478 2SC107 MJ4032 MOTOROLA MJE3055 equivalent TIP2955 DATA MOTOROLA 2N3902 bd139 3v bd561 mje3055 to-220 st

    2SD436

    Abstract: mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 *  Data Sheet SWITCHMODE Designer's *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state–of–the–art die designed


    Original     		PDF MJE18006 MJF18006 MJE/MJF18006 MJF18006, Case32 TIP73B TIP74 TIP74A TIP74B TIP75 2SD436 mje15033 replacement BU108 MJE340 MOTOROLA 3140 BD VCC 3802 BU326 BU100

    EQUIVALENT FOR mjf18004

    Abstract: 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed


    Original     		PDF MJE/MJF18004 MJF1832 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C EQUIVALENT FOR mjf18004 2N3055 plastic BU 647 motorola MJ480 motorola AN485 transistor 3655 BU108 BD139 fall time 2N6491 equivalent BD139 circuits

    vce 1200 and 5 amps npn transistor to 220 pack

    Abstract: MJF18002 221D MJE18002 MJE210 MPF930 MTP8P10 MUR105
    Text: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18002* MJF18002* Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device The MJE/MJF18002 have an applications specific state–of–the–art die designed


    Original     		PDF MJE18002/D MJE18002* MJF18002* MJE/MJF18002 MJE18002/D* vce 1200 and 5 amps npn transistor to 220 pack MJF18002 221D MJE18002 MJE210 MPF930 MTP8P10 MUR105

    BU108

    Abstract: 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009  Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light


    Original     		PDF MJE/MJF18009 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SA101 electronic ballast with MJE13002 2sa135 BUS47P BU326 BU100

    TRANSISTOR REPLACEMENT table for transistor

    Abstract: POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    Original     		PDF MJE13007 MJF13007 MJE/MJF13007 MJF13007 Recogniz32 TIP73B TIP74 TIP74A TIP74B TIP75 TRANSISTOR REPLACEMENT table for transistor POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220

    TRANSISTOR 2SC2366 TO220

    Abstract: K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18204 MJF18204  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state–of–the–art die dedicated to


    Original     		PDF MJE/MJF18204 MJE18204 MJF18204 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TRANSISTOR 2SC2366 TO220 K 3569 7.v equivalent 2N3792 MOTOROLA 2N3055 transistor equivalent BU108 mjf18204 equivalent TRANSISTOR 2SC1669 motorola AN485 RCA1C07 D45H111

    BD127

    Abstract: transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18206 MJF18206  Data Sheet SWITCHMODE NPN Designer's Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS The MJE/MJF18206 have an application specific state–of–the–art die dedicated to


    Original     		PDF MJE/MJF18206 MJE18206 MJF18206 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD127 transistor 2SA1046 2SD630 electronic ballast MJE13005 transistor bd4202 BD388 electronic ballast with MJE13003 motorola AN485 2SC122 transistor Electronic ballast mje13007

    CPH3248

    Abstract: Spice Parameter, Bipolar Transistor SPICE PARAMETER, sanyo, bipolar transistor
    Text: CPH3248 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 700.0f NF 1 IKF 170.0m NE 2 NR 1 IKR 180.0m NC 2 IRB 100.0m RE 25.00m XTB 1.7 XTI 3 VJE 550.0m TF 400p VTF 10 PTF VJC 549.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A


    Original     		PDF CPH3248 CPH3248 Spice Parameter, Bipolar Transistor SPICE PARAMETER, sanyo, bipolar transistor

    r5609

    Abstract: 8E-15 A741 THS4001 bf 333 transistor 8E15 BR-049 296E-18 BF100 transistor SLOA029
    Text: Application Report SLOA029 - October 1999 THS4001 SPICE Model Performance James Karki ABSTRACT This document outlines the SPICE model of the THS4001 high-speed monolithic operational amplifier. General information about the model file structure, performance comparison,


    Original     		PDF SLOA029 THS4001 com/sc/docs/products/analog/ths4001 r5609 8E-15 A741 bf 333 transistor 8E15 BR-049 296E-18 BF100 transistor

    T12B1

    Abstract: h607 H603 1803e H606 H600 H604 MC10H600 BF 273 transistor h601
    Text: AN1402/D MC10/100H640 Translator Family I/O SPICE Modeling Kit Prepared by: Debbie Beckwith ECL Applications Engineering http://onsemi.com APPLICATION NOTE structure, respectively. Six different output buffers represent all of the output buffers for the H60x series of translators.


    Original     		PDF AN1402/D MC10/100H640 r14525 T12B1 h607 H603 1803e H606 H600 H604 MC10H600 BF 273 transistor h601

    H604

    Abstract: FPS001 IBM POS power supply schematics AN1402 h607 H600 H606 MC10H600 H603 h601 transistor
    Text: AN1402 Application Note MC10/100H600 Translator Family I/O SPICE Modeling Kit Prepared by Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect situations for designs which utilize the translator circuits


    Original     		PDF AN1402 MC10/100H600 MC10H600 AN1402/D DL140 H604 FPS001 IBM POS power supply schematics AN1402 h607 H600 H606 H603 h601 transistor

    H604

    Abstract: M-957 SPICE MODEL h607 RX-2 -G T08I h601 transistor IBM POS schematics T5406 Mje 1533 1803e
    Text: AN1402/D MC10/100H640 Translator Family I/O SPICE Modeling Kit Prepared by: Debbie Beckwith ECL Applications Engineering http://onsemi.com APPLICATION NOTE This application note provides the SPICE information necessary to accurately model system interconnect


    Original     		PDF AN1402/D MC10/100H640 MC10H600 H604 M-957 SPICE MODEL h607 RX-2 -G T08I h601 transistor IBM POS schematics T5406 Mje 1533 1803e

    2SC3953-SPICE

    Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
    Text: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f


    Original     		PDF 12A02CH-SPICE 12A02CH 12A02CH 2SB1205 2SB1205 2SC3953-SPICE 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE

    2SC3597-SPICE

    Abstract: 2SC3597 transistor mje 170
    Text: 2SC3597 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 40f NF 1 IKF 700m NE 2 NR 1 IKR 210m NC 2 IRB 1.8m RE 155m XTB XTI 3 VJE 700m TF 140p VTF 5 PTF VJC 500m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm default V sec


    Original     		PDF 2SC3597 2SC3597-SPICE 2SC3597 transistor mje 170

    CPH3105

    Abstract: No abstract text available
    Text: CPH3105 SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 500.0f NF 1 IKF 1.05 NE 2 NR 1 600.0m IKR NC 2 IRB 40.00m RE 22.00m XTB 1.5 XTI 3 VJE 650.0m TF 300p VTF 10 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


    Original     		PDF CPH3105 CPH3105

    2SA2022

    Abstract: Spice Parameter, Bipolar Transistor
    Text: 2SA2022 SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 900.0f NF 1 IKF 2.6 NE 2 NR 1 900.0m IKR NC 2 IRB 200.0m RE 25.00m XTB 1.5 XTI 3 VJE 680.0m TF 400p VTF 10 PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A


    Original     		PDF 2SA2022 2SA2022 Spice Parameter, Bipolar Transistor

    2SA1289

    Abstract: No abstract text available
    Text: 2SA1289 SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 800.0f NF 1 IKF 1.5 NE 2 NR 1 IKR 240.0m NC 2 IRB 200.0m RE 24.50m XTB 2 XTI 3 VJE 750.0m TF 1.7n VTF 1.000K PTF VJC 600.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A


    Original     		PDF 2SA1289 2SA1289

    Untitled

    Abstract: No abstract text available
    Text: GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1700 V 25 mΩ 100 A 95 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area


    Original     		PDF GA50JT17-CAL GA50JT17 00E-47 26E-28 398E-9 026E-09 00E-3

    TC227

    Abstract: KF102 maxim 2150
    Text: MAX3657etc Output Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic


    Original     		PDF MAX3657etc fo102M024 HDE381011 707E-018 HDE381011 TC227 KF102 maxim 2150

    BF100 transistor

    Abstract: XR-1489 CAP XR5 M-024 RC622 TTL TRANSISTOR MODEL PARAMETER ELT25 FQWN410 diode 431M npn TTL LOGIC pspice model
    Text: AN1596/D  ECLinPS Lite Translator ELT Family SPICE I/O Model Kit Prepared by Andrea Diermeier Cleon Petty Motorola Logic Applications Engineering http://onsemi.com APPLICATION NOTE Introduction The objective of this kit is to provide customers with enough schematic and SPICE parameter information to


    Original     		PDF AN1596/D MC10ELT2xD MC100ELT2xD 100ELT2x 10ada r14153 BF100 transistor XR-1489 CAP XR5 M-024 RC622 TTL TRANSISTOR MODEL PARAMETER ELT25 FQWN410 diode 431M npn TTL LOGIC pspice model

    Untitled

    Abstract: No abstract text available
    Text: Orc er ' Y s c’a 'a s'ioe* MOTOROLA i bocíí.': SEMICONDUCTOR TECHNICAL DATA MJ E 18002 M JF18002 Designer’s Data Sheet SWITCHMODE™ M otorola Preferred D e v ice s NPN B ipolar Pow er Transistor For S w itching Pow er Supply A pplications The MJE/MJF18002 have an applications specific state-of-the-art die designed for use


    OCR Scan     		PDF MJE/MJF18002 O-220 O-220 MJF18002, 21A-06 O-220AB 221D-01 221D-02. MJF18002 221D-02

    EM 231 WIRING DIAGRAM

    Abstract: em 223 cn TRANSISTOR BO 344 siemens rs 1064
    Text: SIEMENS NPN Silicon RF Transistor BFP 420 Features • For H igh G ain Low N oise A m plifiers • • For O scillators up to 9 GHz N oise Figure F = 1.05 dB at 1.8 G H z O utstand in g G ms = 20 dB at 1.8 G H z • • • T ransition Frequency fT > 20 GHz


    OCR Scan     		PDF 62702-F1591 EM 231 WIRING DIAGRAM em 223 cn TRANSISTOR BO 344 siemens rs 1064