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    TRANSISTOR MJE13003 Search Results

    TRANSISTOR MJE13003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MJE13003 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage


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    MJE13003D-P MJE13003D-P MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K MJE13003DL-P-x-T92-R MJE13003DG-P-xat QW-R201-085 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


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    MJE13003D MJE13003D MJE13003DL-x-TA3-T MJE13003DG-x-TA3-T MJE13003DL-x-T60-K MJE13003DG-x-T60-K MJE13003DL-x-T92-B MJE13003DG-x-T92-B MJE13003DL-x-T92-K QW-R204-025 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


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    MJE13003D MJE13003D MJE13003DL-x-T60-K MJE13003DG-x-T60-K MJE13003DL-x-T92-B MJE13003DG-x-T92-B MJE13003DL-x-T92-K MJE13003DG-x-T92-K MJE13003DL-x-T92-R QW-R204-025 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D-P Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003D-P is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage


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    MJE13003D-P MJE13003D-P MJE13003DL-P-x-T92-B MJE13003DG-P-x-T92-B MJE13003DL-P-x-T92-K MJE13003DG-P-x-T92-K QW-R201-085 PDF

    MJE13003D

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


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    MJE13003D MJE13003D MJE13003DL-T60-K MJE13003DG-T60-K O-126 QW-R204-025 PDF

    MJE13003D

    Abstract: NPN 0.5A 300V TO-92 300V NPN transistor to-92 High voltage fast switching power transistor to92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


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    MJE13003D MJE13003D MJE13003DL-T60-K MJE13003DG-T60-K MJE13003DL-T92-B MJE13003DG-T92-B MJE13003DL-T92-K MJE13003DG-T92-K MJE13003DL-T92-R MJE13003DG-T92-R NPN 0.5A 300V TO-92 300V NPN transistor to-92 High voltage fast switching power transistor to92 PDF

    MJE13003D

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *13003d
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


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    MJE13003D MJE13003D MJE13003DL-T60-K MJE13003DG-T60-K O-126 QW-R204-025 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *13003d PDF

    MJE13003D

    Abstract: High voltage fast switching power transistor to92 300V NPN transistor to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


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    MJE13003D MJE13003D MJE13003DL-x-T60-K MJE13003DG-x-T60-K MJE13003DL-x-T92-B MJE13003DG-x-T92-B MJE13003DL-x-T92-K MJE13003DG-x-T92-K MJE13003DL-x-T92-R MJE13003DG-x-T92-R High voltage fast switching power transistor to92 300V NPN transistor to-92 PDF

    MJE13003D

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.


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    MJE13003D MJE13003D MJE13003DL-T60-K MJE13003DG-T60-K O-126 QW-R204-025 PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


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    MJE13003-E MJE13003-E MJE13003L-E-x-T6S-at QW-R223-009 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly


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    MJE13003-E MJE13003-E MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K QW-R223-009 PDF

    MJE13003K

    Abstract: Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


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    MJE13003K 290ns MJE13003KL-x-x-T60-K MJE13003KG-x-x-T60-K MJE13003KL-x-x-T6C-A-K MJE13003KG-x-x-Tues QW-R223-006 MJE13003K Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V PDF

    MJE13003

    Abstract: transistor mje13003 NPN Transistor 1.5A 700V MJE13003 transistor
    Text: DATA SHEET MJE13003 NPN SILICON POWER TRANSISTOR TO-126 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJE13003 is a Silicon NPN Power Transistor, designed for high speed power switching applications. MAXIMUM RATINGS TC=25°C unless otherwise noted SYMBOL Collector-Emitter Voltage


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    MJE13003 O-126 100kHz O-126 transistor mje13003 NPN Transistor 1.5A 700V MJE13003 transistor PDF

    MJE13003

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    MJE13003 290ns MJE13003L-x-T60-K MJE13003G-at QW-R204-004 MJE13003 PDF

    transistor mje13003

    Abstract: MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    MJE13003 290ns MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003Gues QW-R204-004 transistor mje13003 MJE13003 TO-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    MJE13003 290ns MJE13003-x-x-T60-K MJE13003-x-x-T6C-A-K MJE13003-x-x-T6C-F-K MJE13003-x-x-T92-B MJE13003-x-x-at QW-R204-004 PDF

    MJE13003 TO-92

    Abstract: MJE13003 transistor tr/MJE13006/MJE13003 TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    MJE13003 290ns QW-R204-004 MJE13003 TO-92 MJE13003 transistor tr/MJE13006/MJE13003 TO-92 PDF

    transistor mje13003

    Abstract: mje13003 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    MJE13003 290ns MJE13003L-x-T60-K MJE13003G-x-T60-K MJE13003L-x-T6C-A-K MJE13003Gues QW-R204-004 transistor mje13003 mje13003 to-92 PDF

    mje13003x

    Abstract: MJE13003 transistor MJE13003 pswt MJE13003 TO-92 MJE13003l
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


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    MJE13003 290ns MJE13003L-x-x-T60-K MJE13003G-x-x-T60-K O-126 MJE13003L-ues QW-R204-004 mje13003x MJE13003 transistor MJE13003 pswt MJE13003 TO-92 MJE13003l PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF