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    TRANSISTOR MJE13007 EQUIVALENT Search Results

    TRANSISTOR MJE13007 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR MJE13007 EQUIVALENT Datasheets Context Search

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    transistor mje13007 equivalent

    Abstract: mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007 MJE13007-TA3-T MJE13007-TF3-T MPF930
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007 NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS 1 TO-220 DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is


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    PDF MJE13007 O-220 MJE13007 O-220F MJE13007L MJE13007-TA3-T MJE13007L-TA3-T MJE13007-TF3-T MJE13007L-TF3-T transistor mje13007 equivalent mje13007 equivalent equivalent of transistor mje13007 silicon transistor Vcbo 800 Vceo 1000 Ic 20A MJE13007L-TA3-T TO-220F torque MJE13007-TA3-T MJE13007-TF3-T MPF930

    *e13007

    Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


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    PDF MJE13007 MJE13007 O-220 QW-R203-019 *e13007 bipolar transistor td tr ts tf equivalent of transistor mje13007

    transistor mje13007 equivalent

    Abstract: mtp8p mje13007 equivalent
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


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    PDF MJE13007 MJE13007 O-220 QW-R203-019 transistor mje13007 equivalent mtp8p mje13007 equivalent

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


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    PDF MJE13007 MJE13007 O-220F MJE13007L QW-R219-004

    transistor mje13007 equivalent

    Abstract: 1500 watts inverter diagrams mje13007 equivalent 221D AN719 AN873 AN875 MJE13007 MJF13007 MJE13007D
    Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching


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    PDF MJE13007/D MJE13007 MJF13007 MJE/MJF13007 MJE13007/D* transistor mje13007 equivalent 1500 watts inverter diagrams mje13007 equivalent 221D AN719 AN873 AN875 MJE13007 MJF13007 MJE13007D

    transistor mje13007 equivalent

    Abstract: Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007
    Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching


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    PDF MJE13007/D MJE13007 MJF13007 MJE/MJF13007 MJE13007/D* transistor mje13007 equivalent Motorola AN222A MJF13007 MJE13007D motorola an569 thermal 221D AN719 AN873 AN875 MJE13007

    MJE13007G

    Abstract: SUS CIRCUIT transistor mje13007 equivalent MJE13007 AN719 AN873 AN875 AN951 MPF930 MUR105
    Text: MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as


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    PDF MJE13007 MJE13007 O-220 MJE13007/D MJE13007G SUS CIRCUIT transistor mje13007 equivalent AN719 AN873 AN875 AN951 MPF930 MUR105

    mje13007-1

    Abstract: MJE13007 transistor mje13007 equivalent mje13007 equivalent TRANSISTOR MJE13007-1 MJE130071 MJE13007D MJE13007-D AN719 MJE-13007
    Text: ON Semiconductort MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching


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    PDF MJE13007 MJE13007 r14525 MJE13007/D mje13007-1 transistor mje13007 equivalent mje13007 equivalent TRANSISTOR MJE13007-1 MJE130071 MJE13007D MJE13007-D AN719 MJE-13007

    AN719

    Abstract: transistor mje13007 equivalent on semiconductor AN719 AN569 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor
    Text: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching


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    PDF MJE13007 O-220 AN569 AN719 transistor mje13007 equivalent on semiconductor AN719 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor

    mje13007-1

    Abstract: MJE130 mje13007 equivalent MJE13007 transistor mje13007 equivalent MJE130071 AN719 AN873 AN875 AN951
    Text: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching


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    PDF MJE13007 MJE13007 r14525 MJE13007/D mje13007-1 MJE130 mje13007 equivalent transistor mje13007 equivalent MJE130071 AN719 AN873 AN875 AN951

    TRANSISTOR REPLACEMENT table for transistor

    Abstract: POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13007 MJF13007 Designer's Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


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    PDF MJE13007 MJF13007 MJE/MJF13007 MJF13007 Recogniz32 TIP73B TIP74 TIP74A TIP74B TIP75 TRANSISTOR REPLACEMENT table for transistor POWER TRANSISTOR TO-220 CASE SE9402 replacement for TIP147 transistor 2SA1046 ON Semiconductor 2N5978 TIP41 TRANSISTOR REPLACEMENT BD863 transistor motorola transistor cross reference transistor cross reference TRANSISTOR 2SC2366 TO220

    MJE130

    Abstract: MJE13007G MJE13007G equivalent mtp8p MJE1300 MJE13007 transistor mje13007g
    Text: MJE13007G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as


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    PDF MJE13007G O-220 MJE13007/D MJE130 MJE13007G equivalent mtp8p MJE1300 MJE13007 transistor mje13007g

    MJE13007G

    Abstract: No abstract text available
    Text: MJE13007G SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as


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    PDF MJE13007G MJE13007G MJE13007/D

    MJE13007G

    Abstract: MJE13007G equivalent AN873 AN719 AN875 AN951 MJE13007 MPF930 MUR105
    Text: MJE13007G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as


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    PDF MJE13007G MJE13007G O-220 MJE13007/D MJE13007G equivalent AN873 AN719 AN875 AN951 MJE13007 MPF930 MUR105

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


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    PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


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    PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


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    PDF BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277

    tip122 tip127 audio amp

    Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power


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    PDF MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100

    mje15033 replacement

    Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.


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    PDF 2N6034 2N6039 MJD6036 MJD6039 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144

    bdx54c equivalent

    Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc


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    PDF BDX53B, BDX53C, 220AB BDX53B BDX53C BDX54B BDX54C TIP73B TIP74 TIP74A bdx54c equivalent BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386

    mje 3007

    Abstract: l3007 I3007 je13007 transistor mje13007 equivalent MJE 340 transistor MJE13007D bipolar power transistor vce 600 volt
    Text: MOTOROLA Order this document by MJE13007/D SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCH MODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching


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    PDF MJE13007/D JE13007 JF13007 MJE/MJF13007 221D-02 O-220 mje 3007 l3007 I3007 transistor mje13007 equivalent MJE 340 transistor MJE13007D bipolar power transistor vce 600 volt

    E13007

    Abstract: E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 je13007 mj 13007 transistor E 13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


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    PDF JE13007 JF13007 MJE/MJF13007 T0-220 MJF13007 E13007 E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 mj 13007 transistor E 13007

    e13009

    Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and


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    PDF MJE13005* e13009 E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data